Object inspection and/or modification system and method

ABSTRACT

A scanning probe microscopy (SPM) inspection and/or modification system which uses SPM technology and techniques. The system includes various types of microstructured SPM probes for inspection and/or modification of the object. The components of the SPM system include microstructured calibration structures. A probe may be defective because of wear or because of fabrication errors. Various types of reference measurements of the calibration structure are made with the probe or vice versa to calibrate it. The components of the SPM system further include one or more tip machining structures. At these structures, material of the tips of the SPM probes may be machined by abrasively lapping and chemically lapping the material of the tip with the tip machining structures.

CROSS REFERENCE TO RELATED APPLICATIONS

[0001] This application is a continuation-in-part of U.S. patentapplication Ser. No. 08/906,602, filed Dec. 10, 1996, (A-59632-4) whichis a file wrapper continuation of U.S. patent application Ser. No.08/281,883, filed Jul. 28, 1994, (A-59632) now abandoned.

[0002] This application is a continuation-in-part of U.S. patentapplication Ser. No. 08/885,014, filed Jul. 1, 1997, (A-59632-5) whichis a continuation of U.S. patent application Ser. No. 08/412,380(A-59632-1), filed Mar. 29, 1995, which is a continuation-in-part ofU.S. patent application Ser. No. 08/281,883 (A-59632).

[0003] This application is a continuation-in-part of U.S. patentapplication Ser. No. 08/776,361 (A-59632-2), filed May 16, 1997 whichstems from PCT Application No. PCT/US95/09553, filed Jul. 28, 1995,(FP-59632-1) which claims priority to U.S. patent application Ser. No.08/281,883 (A-59632) and U.S. patent application Ser. No. 08/412,380(A-59632-1).

[0004] This application is a continuation-in-part of U.S. patentapplication Ser. No. 08/506,516, filed Jul. 24, 1995, which is acontinuation in part of U.S. patent application Ser. No. 08/281,883(A-60535).

[0005] This application is a continuation-in-part of U.S. patentapplication Ser. No. 08/613,982, filed Mar. 4, 1996, (A-62190) which isa continuation in part of U.S. patent application Ser. No. 08/281,883(A-59632).

[0006] This application is a continuation-in-part of PCT Application No.PCT/US96/12255, filed Jul. 24, 1996, (FP-60535) which claims priority topatent application Ser. No. 08/506,516 (A-60535).

[0007] This application is a continuation-in-part of U.S. patentapplication Ser. No. 08/786,623, filed Jan. 21, 1997 (A-64074).

[0008] This application is a continuation-in-part of U.S. patentapplication Ser. No. 08/827,953, filed Apr. 6, 1997 (A-64074-1).

[0009] All of the identified and cross referenced applications arehereby incorporated by reference in their entirety.

FIELD OF THE INVENTION

[0010] The present invention relates generally to systems and methodsfor modifying and/or inspecting an object. In particular, it pertains toa system and method for using nanostructured and nanopositioned probesto remove material from or add material to an object, chemically changethe material of an object, and/or analyze the material of an object.

BACKGROUND OF THE INVENTION

[0011] Common microfabrication techniques such as e-beam, laser beam,and standard photolithography are used to directly make or modifysemiconductor wafers or fabrication masks. However, these techniquessuffer from limitations in the size and energy which may to be used tocreate, modify, and inspect structures on the wafers or masks.Specifically, it is desirable that techniques be available to create,modify, and inspect structures in the range of a single molecule(approximately I Angstrom or less). However, the current techniques areunable to create, modify, and inspect structures at and below 100nanometers.

[0012] For example, in conventional semiconductor fabrication maskrepair systems, a finely focused laser beam is used to remove orchemically activate for removal material deposited in a pattern on amask Similarly, the laser beam is used to deposit material on the maskby locally heating sites on the mask while the mask is in a gaseousenvironment. However, these techniques can only be used to createdesired changes of no smaller then 500 nanometers. Moreover, thesesemiconductor fabrication mask repair systems cannot insure that thechanges made to a modified mask will produce the desired pattern on atarget wafer.

SUMMARY OF THE INVENTION

[0013] In summary the present invention is a SPM (scanning probemicroscopy) inspection and/or modification system which uses SPMtechnology and techniques in new and novel ways to inspect and/or modifyan object. The system includes various types of microstructured SPM(scanning probe microscopy) probes for inspection and/or modification ofthe object.

[0014] The components of the SPM system also include microstructuredcalibration structures. A probe may be defective because of wear orbecause of fabrication errors. Various types of reference measurementsof the calibration structure are made with the probe or vice versa tocalibrate it.

[0015] In addition, the components of the SPM system may include one ormore tip machining structures. At these structures, material of the tipsof the SPM probes may be machined by abrasively lapping and chemicallylapping the material of the tips. This is done by rubbing the materialof the tips against the tip machining structures.

[0016] The SPM probes include probes with which the object may beinspected in a number of ways using SPM technology and techniques. Thisinspection is performed with various components of the SPM system formaking SPM measurements with the probes. All of the SPM measurements areprocessed and inspection data (or results) for the object is generated.This inspection data may include an image and/or analysis of the object.The analysis may be of the electrical, optical, chemical, (includingcatalytic), and/or biological (inclduing morphological) properties,operation, and/or characteristics of the object.

[0017] The SPM probes also include probes with which the object may bemodified in a number of ways using SPM technology and techniques. Someof these probes may also be used to inspect the object, as justdiscussed. A user may request that a modification be made to the objectbased on the inspection data just described or on inspection datagenerated by some of the other components of the system without usingany probes.

[0018] The generated inspection data is then compared with target data(or parameters). This target data may include a target image and/oranalysis of the object which is/are compared with the generated imageand/or analysis. If they do not match within a predefined tolerancelevel, then modification data is generated that identifies the types ofmodifications that need to be made to the object to fall within thetolerance level. These modifications may be simply to remove particlecontaminants on the object or more importantly to structurally and/orchemically modify the material of the object by removing, deforming,and/or chemically changing a portion of it or adding other material toit. Then, one or more of the modification probes are used to make thesedesired modifications.

[0019] The process just described can be iteratively repeated until thegenerated inspection data converges to the target data so as to bewithin the predefined tolerance level. This process is particularlyuseful in fabrication and/or repair of semiconductor wafers andfabrication masks, lithographic structures, and thin film magneticread/write heads.

BRIEF DESCRIPTION OF DRAWINGS

[0020]FIG. 1 shows an SPM inspection and/or modification system forinspecting and/or modifying an object.

[0021] FIGS. 2 to 4 show different views of a first SPM probe of the SPMsystem of FIG. 1.

[0022] FIGS. 5 to 8 show different views of a scanning head of the SPMsystem of FIG. 1.

[0023]FIGS. 9, 10, and 87 show different views of a calibrationstructure of the SPM system of FIG. 1.

[0024]FIGS. 11 and 52 show different views of another calibrationstructure of the SPM system of FIG. 1.

[0025] FIGS. 12 to 15 show different views of a nanostructured forcebalance of the SPM system of FIG. 1.

[0026]FIG. 16 and 17 show curves for a differential pressure chamberformed with the SPM system of FIG. 1 in the gap between the first SPMprobe and the object.

[0027]FIGS. 18 and 19 show different embodiments for the gap sensors ofthe first SPM probe to sense the width of the gap in which thedifferential pressure chamber is formed.

[0028] FIGS. 20 to 23 show different views and embodiments of a secondSPM probe of the SPM system of FIG. 1.

[0029]FIGS. 24 and 25 show different views of a third SPM probe of theSPM system of FIG. 1.

[0030]FIG. 26 shows a fourth SPM probe of the SPM system of FIG. 1.

[0031] FIGS. 27 to 35, 82, 83, and 86 show different views of a fifthSPM probe of the SPM system of FIG. 1.

[0032]FIGS. 36 and 37 show different views of a sixth SPM probe of theSPM system of FIG. 1.

[0033]FIGS. 38 and 39 show different views of a seventh SPM probe of theSPM system of FIG. 1.

[0034] FIGS. 40 to 43 show different views and embodiments of an eightSPM probe of the SPM system of FIG. 1.

[0035] FIGS. 44 to 46 show different views of a ninth SPM probe of theSPM system of FIG. 1.

[0036]FIGS. 47 and 48 show different embodiments of a tenth SPM probe ofthe SPM system of FIG. 1.

[0037] FIGS. 49 to 51 show different views of an eleventh SPM probe ofthe SPM system of FIG. 1.

[0038] FIGS. 53 to 55 show different views of a twelfth SPM probe of theSPM system of FIG. 1.

[0039]FIGS. 56 and 57 show different views of an aperture plate of theSPM system of FIG. 1.

[0040] FIGS. 58 to 60 show different views of a fourteenth or fifteenthSPM probe of the SPM system of FIG. 1.

[0041] FIGS. 61 to 63 show different views and embodiments of asixteenth SPM probe of the SPM system of FIG. 1.

[0042] FIGS. 64 to 67 show different views and embodiments of aseventeenth SPM probe of the SPM system of FIG. 1.

[0043] FIGS. 68 to 70 show different views of an eighteenth SPM probe ofthe SPM system of FIG. 1.

[0044] FIGS. 71 to 73 show different views of another embodiment of theSPM system of FIG. 1.

[0045]FIG. 74 shows a controller of the SPM system of FIG. 1.

[0046] FIGS. 75 to 77 show different views of overlaid surfacesgenerated by an overlay image generator of the controller of FIG. 74.

[0047]FIG. 78 shows a modulated surface image generated by a modulatedimage generator of the controller of FIG. 74.

[0048] FIGS. 79 to 81 show different composite images of measuring toolsembedded in objects generated by the composite image generator of thecontroller of FIG. 74.

[0049]FIGS. 84 and 85 show different views of a tip machining structureof the SPM system of FIG. 1.

DETAILED DESCRIPTION OF THE INVENTION

[0050] Referring to FIG. 1, there is shown an exemplary embodiment of anSPM (scanning probe microscopy) object and/or inspection system 100which uses SPM technology and techniques in new and novel ways toinspect and/or modify an object 102. For example, as will be discussedthroughout this document, the system can be used to perform tests,fabrication (i.e., manufacturing) steps, and/or repairs on semiconductorwafers and fabrication masks, lithographic structures (i.e., masters),and thin film magnetic read/write heads. Additionally, as will also bediscussed throughout this document, the SPM system can also be used toanalyze and/or alter biological or chemical samples.

[0051] The components of the SPM system I 00 include a positioningsystem 103 that comprises a rough positioning apparatus 104, finepositioning apparatuses 106, a support table 108, and scanning headsupport structures 110. The rough positioning apparatus comprises arough 3-D (i.e., three dimensions) translator, such as a mechanical ballscrew mechanism. The rough positioning apparatus is fixed to the supporttable. Each fine positioning apparatus comprises a fine 3-D translator,such as a piezoelectric translator with or without linear positionfeedback. Each fine positioning apparatus is fixed to a correspondingscanning head support structure. Each scanning support structure isfixed to the support table.

[0052] The components of the SPM system 100 also include one or morescanning heads 120. Each scanning head is fixed to a corresponding finepositioning apparatus 106 and is roughly and finely positioned in 3-D(i.e., X, Y, and Z dimensions) with the rough positioning apparatus 104and the corresponding fine positioning apparatus. This positioning maybe done in order to load and unload various types of microstructured SPM(scanning probe microscopy) probes 122 of the SPM system to and from thescanning heads and position the loaded probes for calibration andinspection and/or modification of the object. This positioning is donewith respect to the object 102, calibration structures 128, probesuppliers 124 and 125, a probe disposal 126, a probe storage site 127,and other components 123 of the SPM system.

[0053] The components of the SPM system 100 also include a programmedcontroller 114 that includes a user interface 116. It also includes anobject loader 115 that comprises a load arm 117, a positioning system118 connected to the load arm, and an object storage unit 119. When itis desired to inspect and/or modify the object 102, a user of the systemuses the user interface to request that the controller have the objectloaded by the object loader for inspection and/or modification. Thecontroller controls the object loader's load arm and positioning systemso as to load the object 102 from the object loader's storage unit ontothe object loading site 129. The object loading site is also one of theSPM system's components and is located on the upper surface of the roughpositioning apparatus 104. In loading the object onto the object loadingsite, the object is removed from the storage unit with the load arm. Theload arm is then lowered into the recess of the object loading site sothat the object rests on the object loading site and no longer on theload arm. The load arm is then slid out of the recess. Similarly, whenthe inspection and/or modification of the object is over, the userrequests with the user interface that the controller have the objectunloaded. In response, the controller controls the load arm to unloadthe object from the object loading site and place it back in the storageunit. This is done by sliding the load arm into the recess and raisingit so that the object rests on the load arm and no longer on the objectloading site. The load arm is then used to place the object back in thestorage unit. The object loader may be a conventional semiconductorwafer or fabrication mask loader used in fabrication of wafers or masks.

[0054] As alluded to earlier, the components of the SPM system 100further include SPM probes 122, vertical and horizontal probe suppliers124 and 125, and a probe storage site 127. The probes can be loaded ontoeach scanning head 120 from the vertical and horizontal probe suppliersor from the probe storage site 127. The probe storage site and the probesuppliers are located on the rough positioning apparatus 104. Each probesupplier may supply a different type of probe than any other probesupplier and comprises a stacking mechanism for stacking the same typeof probe. This may be a spring, air, gravity, electromechanical, orvacuum driven stacking mechanism.

[0055] Moreover, when the user wishes to use a particular SPM probe 122for inspecting and/or modifying the object 102, the user instructs thecontroller 114 with the user interface 116 to load this probe onto oneof the scanning heads 120. If a probe of this type has already been usedbefore and has been stored at the probe storage site 127, the controllercontrols the positioning system 103 to position the scanning head overthis site and lower it onto the probe. The controller then controls thescanning head so that the probe is loaded onto it. But, if a new probeof this type is required because one has not been used or the previouslyused one has become defective, the controller controls the positioningsystem to position the scanning head over the probe supplier 124 or 125that supplies the desired type of probe and lower it onto the probe thatis currently at the top of the stack of the probe supplier. Thecontroller then causes the probe to be popped off of the stack andloaded onto the scanning head. In addition, in the instances describedlater where active mechanical, electrical, electromagnetic. vacuum,hydraulic, pneumatic, fluids, magnetic, or other mechanisms areintegrated into the probe, provision is made on the probe and in thescanning head for control connections (i.e., electrical, optical,mechanical, vacuum, etc.). As a result, the scanning head may senseoptical, mechanical or electrical variations which tell the controllerwhich type of probe has been loaded. Thus, different types of probes maybe loaded through the same probe supplier. The different types of probesand probe suppliers and the specific ways in which the probes may beloaded onto the scanning heads will be discussed later.

[0056] However, when the user wishes to use another one of the SPMprobes 122 for inspecting and/or modifying the object 102 with the samescanning head 120, the user instructs the controller 114 with the userinterface 116 to unload the currently loaded probe. In response, thecontroller controls the positioning system 103 to position the scanninghead so that the probe that is currently loaded is lowered to the probestorage site 127 on the rough positioning apparatus. Then, thecontroller causes the probe to be unloaded from the scanning head ontothis site.

[0057] In order to calibrate an SPM probe 122 that is loaded onto one ofthe scanning heads 120 and determine whether it is defective, thecomponents of the SPM system 100 include microstructured calibrationstructures 128 located on the rough positioning apparatus 104. A probemay be defective because of wear or because of fabrication errors. Foreach type of probe, the controller 114 stores one or more referenceparameters each associated with a corresponding calibration structure128. Thus, the controller controls the positioning system 103, theprobe, and some of the other components 123 of the SPM system 100 sothat various types of reference measurements of the calibrationstructure 128 are made with the probe or vice versa. These referencemeasurements are then compared with the reference parameters. If they donot match within a predefined tolerance level stored by the controllerand set by the user with the user interface 116, then the probe isconsidered to be defective. Otherwise, the controller uses the referencemeasurements to calibrate the probe in the ways described later. Thespecific types of calibrations that can be made for the probes aredescribed later.

[0058] In addition, the components of the SPM system 100 may include oneor more tip machining structures 121. At these structures, material ofthe tips of the SPM probes 122 may be machined by abrasively lapped andchemically lapped. This is done by rubbing the material of the tipagainst the tip machining structures.

[0059] The components of the SPM system 100 also include a probedisposal 126 which is used to dispose of (or discard) SPM probes 122that are defective. In the case of a probe that is determined to bedefective in the manner just described, the user can instruct thecontroller 114 with the user interface 116 to have the defective probediscarded. In response, the controller controls the positioning system103 to position the scanning head 120 over the probe disposal and lowerit to the probe disposal. Then, the controller controls the scanninghead to unload the currently loaded probe into the probe disposal.

[0060] In an alternative embodiment, each scanning head 120 could befixed to a corresponding rough positioning subsystem 104 and acorresponding fine positioning subsystem 106. The probe suppliers 124and 125, probe disposal 126, and the calibration structures 128 wouldthen be located on the support table 108. In this way, each scanninghead could be independently positioned with respect to the probesuppliers and probe disposal for loading, unloading, and disposal of SPMprobes 122 and independently positioned for positioning a probe withrespect to the object 102 for inspection and/or modification of theobject and the reference structures for calibration and examination ofthe probes. Moreover, in such an embodiment, there would be acorresponding scanning head, a corresponding rough positioningsubsystem, and a corresponding fine positioning subsystem for inspectionand for modification.

[0061] The SPM probes 122 include probes with which the object 102 maybe inspected in a number of ways using SPM technology and techniques.This inspection is performed with various components of the SPM systemincluding the controller 114, the user interface 116, the positioningsystem 103, the scanning heads 120, those of the calibration structures128 used to calibrate the probes, and those of the other components 123of the SPM system that are used for making SPM measurements with theprobes. In doing so, the user requests that an inspection be made withthe user interface. When this occurs, one or more of the probes areselectively loaded, calibrated, and unloaded in the manner discussedearlier for making SPM measurements of the object. Moreover, for eachprobe that is used to make certain SPM measurements of the object, thecontroller controls the positioning system, any of the other componentsof the SPM system used to make these SPM measurements, and the loadedprobe so that these SPM measurements are made with the probe. Thecontroller then processes all of the SPM measurements and generatesinspection data (or results) for the object. This inspection data mayinclude an image and/or analysis of the object. The analysis may be ofthe electrical, optical, chemical, (including catalytic), and/orbiological (inclduing morphological) properties, operation, and/orcharacteristics of the object. The various types of probes used toinspect the object and the corresponding kinds of inspections they areused to make will be described in greater detail later.

[0062] Although it may be desired to simply inspect the object 102,certain components of the SPM system 100 are used to modify the objectbased on the inspection data generated by the inspection subsystem .Thus, the SPM probes 122 also include probes with which the object 102may be modified in a number of ways using SPM technology and techniques.Some of these probes may also be used to inspect the object, as justdiscussed. The components of the SPM system used for this purposeinclude the controller 114, the user interface 116, the positioningsystem 103, the scanning heads 120, those of the calibration structures128 used to calibrate the modification probes, and those of the othercomponents 123 of the SPM system that are used in making modificationsto the object with the probes. With the user interface, the userrequests that a modification be made to the object based on theinspection data just described or on inspection data generated by someof the other components 123 of the system without using any probes.

[0063] The controller 114 can compare the generated inspection data withtarget data (or parameters). This target data may include a target imageand/or analysis of the object which is/are compared with the generatedimage and/or analysis. If they do not match within a predefinedtolerance level stored by the controller and specified by the user withthe user interface 116, the controller generates modification data thatidentifies the types of modifications that need to be made to the objectto fall within the tolerance level. These modifications may be simply toremove particle contaminants on the object or more importantly tostructurally and/or chemically modify the material of the object byremoving, deforming, and/or chemically changing a portion of it oradding other material to it. Then, one or more of the modificationprobes are selectively loaded, calibrated, and unloaded in the mannerdescribed earlier to make these desired modifications. Furthermore, foreach modification probe used to make certain desired modifications tothe object, the controller controls the positioning system, any of theother components of the SPM system used in making these modifications,and, if needed, the modification probe so that these modifications aremade. The various types of SPM probes used to modify the object and thecorresponding kinds of modifications they make will be described ingreater detail later.

[0064] The process just described can be iteratively repeated until thegenerated inspection data converges to the target data so as to bewithin the predefined tolerance level. This process is particularlyuseful in fabrication and/or repair of semiconductor wafers andfabrication masks, lithographic structures, and thin film magneticread/write heads.

Repair and/or Fabrication of Masks and/or Wafers

[0065] Specifically, the SPM system 100 may be used to perform precisionrepairs of a completed mask or wafer after fabrication. In fact, the SPMsystem may even be used to perform precision repairs and/or fabricationsteps of a partially completed mask or wafer during fabrication. Theserepairs and/or fabrication steps comprise structurally and/or chemicallymodifications to the material of the mask or wafer by removing,deforming, and/or chemically changing a portion of it or adding othermaterial to it.

[0066] For example, the SPM system 100 may be provided with repairand/or fabrication data for a mask or wafer that was previouslyinspected by a conventional mask or wafer inspection system. Theprovided repair and/or fabrication data identifies where a repair and/ora fabrication step is to be performed on the mask or wafer. Using one ormore of the SPM probes 122 and/or some of the other components 123 ofthe SPM system, the controller 114 locates a reference point on thewafer or mask. Then, using the reference point and the provided repairand/or fabrication data, the controller may cause an inspection of thewafer or mask to be made where the repair and/or fabrication step is tobe performed. This is done with one or more of the probes in the mannerbriefly described earlier and will described in greater detail later. Asa result, inspection data is generated which comprises an image and/oranalysis of the mask or wafer. By comparing the generated inspectiondata with target data stored by the controller, repair and/orfabrication (i.e., modification) data is generated by the controller.Then, based on the repair and/or fabrication data, the controller causesthe repair and/or fabrication step to be performed on material of theobject with one or more of the probes and under the direction of theuser. This is done in the manner described briefly earlier and will bedescribed in greater detail later.

[0067] Then, the controller 114 causes another inspection of the mask orwafer to be made after the repair and/or fabrication step. Thisinspection may be done with or without any of the SPM probes 122 in themanner described earlier. Furthermore, this may be done in such a waythat the mask or wafer is inspected so as to simulate or emulate its usein the environment in which it is normally used.

[0068] For example, in the case of a mask, some of the other components123 of the SPM system and/or one of the SPM probes 122 would causeradiation to be directed at the mask. Such radiation may compriseelectromagnetic energy, such as radio frequency waves, gamma rays,xrays, ultraviolet light, infrared light, visible light, and/or chargedparticles, such as protons, electrons, alpha particles, or ions. Theresulting radiation that would be projected by the mask onto a wafer orthat would be reflected and/or emitted by the mask would then bedetected by some of the other components of the SPM system and/or one ofthe SPM probes. From the detected radiation, the controller generatesand displays a patterned image of the detected radiation so as toemulate the way in which the mask would expose a wafer to radiationduring actual fabrication of the wafer.

[0069] Alternatively, one or more of the SPM probes 122 may be used tomake SPM measurements of the mask which are used by the controller 114to produce a structural image of the mask in response. From thisproduced structural image, the controller 114 would simulate thedetection of resulting radiation that would be projected by it orreflected and/or emitted by it in response to radiation directed at it.From this simulation, a patterned image of the detected radiation isgenerated.

[0070] In either case, the controller 114 compares the generatedpatterned image with a recorded target patterned image or criteria togenerate repair and/or fabrication data that identifies any furtherrepair and/or fabrication step to be performed on the mask. Thecontroller 114 then causes the entire process to be repeated until thegenerated patterned image has converged to the target patterned image orcriteria within the specified tolerance level.

[0071] Furthermore, in the case of a wafer, one or more of the SPMprobes 122 may be used to make SPM measurements of the wafer. These SPMmeasurements may be used by the controller 114 to generate an analysisof the properties, operation, and/or characteristics of the wafer and/ora structural image of the wafer. This generated analysis and/or image isthen compared with a target analysis or image to generate repair and/orfabrication data that identifies that identifies any further repairand/or fabrication step to be performed on the wafer. The controller 114then causes the entire process to be repeated until the generatedanalysis and/or image converges to the target analysis or image withinthe specified tolerance level.

Removal of Particle Contaminants from Masks and/or Wafers

[0072] In addition to performing repairs and/or fabrication steps on amask or wafer, the SPM system 100 could also be used to remove aparticle contaminant on a mask or wafer. This would be done in a similarmanner to that just described. Specifically, the SPM system would beprovided with inspection data from a conventional contaminant inspectionsystem that indicates where the particle contaminant is located on themask or wafer. Then, one or more of the SPM probes 122 would be used toremove the particle contaminant without modifying the material of themask or wafer based on the inspection data. In order to confirm that theparticle contaminant has been removed, one or more of the SPM probescould be used to inspect the mask or wafer to determine whether this isthe case. This may also be done in the manner described earlier byinspecting the mask or wafer so as to simulate or emulate its use in theenvironment in which it is normally used. Thus, this process may berepeated until the particle contaminant is removed.

Lithographic Structure Fabrication and/or Repair

[0073] Since the SPM system 100 may be used to perform precision repairsand/or fabrication steps of a partially completed or fully completedsemiconductor fabrication mask, it may be also be used more generallyfor performing a repair or fabrication step on a lithographic structure.Such a lithographic structure may be a semiconductor mask as justdescribed or other lithographic master used to fabricate replicablestructures. Such replicable structures include optical structures(including x-ray and UV phase and diffraction optics), precisionmeasuring scales, micro-machines, biochemical patterns, phosphors,fluorescent structures, biological structures (including DNA, RNA,proteins, catalysts, and enzymes). This process would be performed inthe same manner just described for a semiconductor fabrication mask,except that the inspection or measurement imaging may includenanospectrophotometry, chemical analysis, and x-ray analysis.

Thin Film Read/Write Head Fabrication and/or Repair

[0074] The process just described can also be used to perform precisionrepairs and/or fabrication steps of a thin film magnetic read/write heador other magnetic structure. In particular, gaps (or grooves) in andbetween the write and read poles of the thin film magnetic material canbe precisely created and/or repaired. In addition, such gaps may bemagnetically characterized and then refined to optimize its magneticfield properties using the SPM probes. More generally, a gap (or groove)between magnetic elements of a magnetic microstructure can be createdand/or repaired and characterized using this process. Specifically, amagnetically sensitive SPM probe may be used to map the magnetic fieldof the magnetic microstructure at varying drive energies and then otherSPM probes may be used to modify the gap or apply additional magneticmaterial to obtain the desired field distribution for any given magneticmicrostructure design.

Tip Fabrication and/or Repair

[0075] The SPM system 100 may also be used to perform precision repairsand/or fabrication steps when the object 102 itself is an SPM probe,such as one of the SPM probes 122 disclosed herein. Specifically,material could be added and/or removed to and from the probe using theSPM probes disclosed herein in order to create a desired shape orfunction for the probe.

Structure of SPM Probe 122-1

[0076] Referring now to FIG. 2, there is shown a microstructured SPM(scanning probe microscopy) probe 122-1 for use in inspecting the object102 by making SPM measurements of the object, such as AFM (atomic forcemicroscopy), STM (scanning tunneling microscopy), and/or radiationmeasurements, such as NSOM (near-field scanning optical microscopy)measurements and/or far-field radiation measurements. This probe mayalso be used to modify the object The SPM probe 122-1 has a base 130 andapertures (or openings) 132 that define corresponding inner perimetersurfaces 134 of the base. The probe also has several cantilevers 136each connected to the base and extending into a corresponding aperture.On each cantilever is a corresponding tip 138. Each cantilever andcorresponding tip form a corresponding SPM tool 137 that is used inmaking the SPM measurements and is attached to the base, disposed in thecorresponding aperture, and framed (or surrounded) by the correspondinginner surface of the base.

[0077] As shown in FIG. 3, when not engaged for inspecting the object102, each SPM tool 137 of the SPM probe 122-1 is normally kept in thecorresponding aperture 132 between the upper and lower surfaces 140 and142 of the base 130 so that the tool, and in particular the tip 138, isprotected from being damaged during loading onto and unloading from oneof the scanning heads 120. Moreover, referring to FIG. 1, the probe maybe supplied by one of the probe suppliers 124 that has a verticalstacking mechanism and extends vertically up through the roughpositioning subsystem 104. In such a probe supplier, the probe can bevertically stacked on top of other probes of this type without damagingthe tools of the probe.

[0078] Referring to FIG. 4, the tip 138 and cantilever 136 of each SPMtool 137 of the SPM probe 122-1 have a core material 144 that comprisesa conductive or semiconductive material, such as silicon or siliconnitride. Referring back to FIG. 3, the base 130 of the probe and the tipand cantilever of each tool of the probe may be integrally formedtogether from this core material. Alternatively, the base of the probemay be formed on and around each tool. In either case, this is doneusing conventional semiconductor manufacturing techniques.

[0079] As alluded to earlier, each SPM tool 137 of the SPM probe 122-1can be used to make AFM measurements in order to inspect the object 102.Thus, in order to be resistant to frictional wear when being used inthis manner, the tip 138 of each tool may include an obdurate coating146 over the core material 144 at least at the sharp end of the tip, asshown in FIG. 4. This coating may comprise diamond, silicon carbide,carbon nitride, diamond like carbon, or some other obdurate material,and may have a thickness in the range of approximately 1 Angstroms to 10micrometers.

[0080] In the case where the obdurate coating 146 comprises diamond likecarbon, a mask may be placed over each tool so that only the tips 138are exposed. Then, carbon is vacuum arc deposited on the core material144 to form the carbon coating. This may be done in the manner describedin Ager, J. W. et al., “Multilayer Hard Carbon Films with Low WearRates”, Surface and Coatings Technology, submitted Mar. 26, 1996,Anders, S. et al., “Properties of Vacuum Arc Deposited Amorphous HardCarbon Films”, Applications of Diamond Films and Related Materials,Third International Conference, 1995, and Pharr, G. M. et al.,“Hardness, Elastic Modules, and Structure of Very Hard Carbon FilmsProduced by Cathodic Arc Deposition with Substrate Pulse Biasing.

[0081] But, in the case where the obdurate coating 146 comprisesdiamond, carbon is deposited on the exposed surface of the core material144 of the tips in the same manner as just described. In this casehowever, the carbon forms seed sites for growing diamond crystals.Alternatively, seed sites may be formed by pushing or rubbing each tipon a surface containing fine grain diamond (such as a lap orpolycrystalline diamond coated surface). The probe is then placed in amethane and hydrogen or methane and argon atmosphere for chemical vapordeposition (CVD) of diamond on the exposed surfaces. As a result of theseed sites, a polycrystalline diamond coating is grown on the exposedsurfaces with the diamond crystals being grown normal to the exposedsurfaces. The use of a methane and argon atmosphere has severaladvantages over the use of a methane and hydrogen atmosphere.Specifically, a methane and argon atmosphere is safer because it is lessvolatile. And, in a methane and argon atmosphere, the rate of growth andsize of the diamond crystals is smaller. This is desirable forfabrication of the tips 138 of the microstructured SPM probe 122-1.

[0082] Moreover, during the deposition process, a bias voltage may beapplied to the core material 144 of the probe 122-1. This voltage shouldbe sufficient to create an electrical field at the sharp end of the tips138 of the probe which is large enough so that the diamond crystalsgrown at the sharp end of the tips are symmetrically aligned but smallenough so that the diamond crystals grown below the sharp end of thetips are not symmetrically aligned. The advantage of this is to obtain aconsistent orientation and tip behavior at the sharp end withoutsacrificing the durability and stability of the obdurate coating 146below the sharp end.

[0083] And, when the obdurate coating 146 comprises carbon nitride, thesame seeding processes as was just described for diamond growth may beused. Then, the probe 122-1 is placed in an atmosphere of monatomicnitrogen. The monatomic nitrogen is obtained by passing nitrogen gasthrough a hollow tungsten heater consisting of a hollow tungstenstructure through which an electric current is passed. The tungstenheater is maintained at a temperature of 2100 to 3000° C. In oneembodiment, the tungsten heater also includes a quantity of carbonsufficient to combine chemically to form a carbon nitride layer on thecarbon seed sites at the cool exposed surfaces (800° C.) of the corematerial 144 of the tips. In another embodiment, the process beginswithout introducing nitrogen gas. After a few atoms of carbon aredeposited, the nitrogen gas is introduced into the tungsten electrodeand deposition and growth of the polycrystalline carbon nitride coatingis initiated.

[0084] In addition, the tools 137 of the probe 122-1 can be used to makeSTM measurements in order to inspect the object 102. Thus, so that eachtip 138 can be used in this manner, the obdurate coating 146 of each tipcan be made to be conductive. This is done by doping the diamond,silicon carbide, carbon nitride, diamond like carbon, or other materialwhich comprises the obdurate coating with a suitable impurity, such asboron. In the case of diamond like carbon, this is not necessary sinceit is conductive but may be done anyway to improve conductivity.

[0085] Formation of conductive diamond, silicon carbide, and carbonnitride crystals on SPM tips is further described in U.S. patentapplication Ser. No. 08/906,602, PCT Application No. PCT/US95/09553,U.S. patent application Ser. No. 08/506,516, and PCT Application No.PCT/US96/12255 referenced earlier. And, growth of diamond and siliconcrystals is further described in “Deposition, Characterization, andDevice Development in Diamond, Silicon Carbide, and Gallium Nitride ThinFilms”, by Robert F. Davis, Journal of Vacuum Science and Technology,volume A 11 (4) (July/August 1993), which is hereby incorporated byreference. Furthermore, growth of diamond crystals on field emissivetips is described in E. I. Givargizov et al., “Growth of DiamondParticles on Sharpened Silicon Tips for Field Emission, Diamond andRelated Materials 5 (1996), pp.938-942, E. I. Givargizov et al., “Growthof Diamond Particles on Sharpened Silicon Tips”, Materials Letters 18(1993), pp. 61-63, K. Okano et al., “Mold Growth of PolycrystallinePyramidal-Shape Diamond for Field Emitters”, Diamond and RelatedMaterials 5 (1996), pp.19-24, which are also hereby incorporated byreference in their entirety.

[0086] Furthermore, referring to FIG. 3, the tools 137 of the probe122-1 can be used to make radiation measurements in order to inspect theobject 102. Thus, for each tool of the probe, the probe includes acorresponding lens 147 and lens support 149 that supports the lens. Aswith the tip and cantilever of each tool, the lens and lens support foreach tool may be integrally formed together with the base 130 or thebase may be formed on and around the lens support. This is also doneusing conventional semiconductor manufacturing techniques.

[0087] In order to make these radiation measurements, the each tip 138of the probe 122-1 has a reflective coating 143 that reflects light soas to contain within the tip any light that propagates in the tip. Thiscoating may comprise a light reflective material, such as aluminum,tungsten, or gold. It may be formed over the obdurate coating 146 usingconventional techniques and have a thickness in the range ofapproximately I Angstrom to 1 micron. A small portion of the reflectivecoating 143 is removed or rubbed off at the sharp end of each tip 138using conventional techniques to at least the point where the reflectivecoating is no longer opaque to light propagating through the tip.Furthermore, the reflective coating is removed or rubbed off only sothat it ends approximately 5 to 10 nm from the point of the sharp end.As a result, an aperture having a diameter in the range of approximately5 to 100 nm is formed at the sharp end. Moreover, in the case where thelight reflective coating 143 is conductive, it can also be used to makethe STM measurements. In this case, the obdurate coating 146 need not bemade conductive.

[0088] As an additional note, the formation of the tips 138 andcantilevers 138 of the probe 122-1 are similarly described in U.S.Patent Application No., PCT Application No. PCT/US95/09553, U.S. patentapplication Ser. No. 08/506,516, and PCT Application No. PCT/US96/12255referenced earlier.

[0089] Referring again to FIG. 2, and as mentioned earlier, the probe122-1 has multiple tools 137 each comprising a cantilever 136 and a tip138 on the cantilever. Thus, when the tip of one of the probe's tools isdetermined to be defective in the manner to be described later, thenanother one of the probe's tools with a tip determined not to bedefective can be used for inspecting the object 102 without having toload another probe of this type.

Probe Loading and Unloading

[0090]FIG. 5 shows the way in which the probe 122-1 is loaded onto oneof the scanning heads 120. The scanning head includes a housing 154 witha probe holding plate 156. As shown in FIG. 6, the probe holding plateincludes a seat 158 formed by a recess in the probe holding plate thatis in the shape of the base of the probe and seats (or holds) the probe.And, the other components 123 of the SPM system 100 include a rotary camassembly 160 that is formed in the probe holding plate. Thus, when theprobe is being loaded onto the scanning head in the manner describedearlier, the controller 114 controls the rotary cam assembly so that itsrotary cam rotates and presses against the probe and locks it into placein the seat of the probe holding plate. In this way, the probe is loadedonto the scanning head. Similarly, when the probe is being unloaded fromthe scanning head in the manner described earlier, the controllercontrols the rotary cam assembly so that the rotary cam rotates and nolonger presses against the probe and unlocks it from the seat of theprobe holding plate.

[0091] Furthermore, as shown in FIG. 3, the base 130 of the SPM probe122-1 has a tapered outer perimeter surface 157 so that the bottomsurface 142 has an area larger than that of the top surface 140. Inaddition, referring to FIG. 6, the bottom surface has an area largerthan that of the recess that forms the seat 158 in the probe holdingplate 156. Thus, as shown in FIG. 5, when the probe is loaded onto oneof the scanning heads 120, the base of the probe is wedged into therecess so that the probe is properly seated in the seat of the scanninghead's probe holder 156 with no movement between the probe and the probeholding plate.

Tip Activation and Deactivation

[0092] Referring now to FIGS. 5 and 7, fixed to the probe holding plate156 are tip actuators 174 that are each used to selectively activate anddeactivate a corresponding tip 138 of the SPM probe 122-1 for use ininspecting the object 102. Each tip actuator includes an L-shaped leverarm 170, a pivot 171, an engagement transducer 172, and an adjustmenttransducer 173. The L-shaped lever arm has one end fixed to theengagement and adjustment transducers and a rounded end that extendsinto an aperture 159 in the seat 158 of the probe holding plate 156. Theengagement and adjustment transducers may each comprise a material, suchas a piezoelectric material or a resistive metal (e.g., Nickel Chromiumalloy), which change dimensions when a voltage or current signal isapplied to it. Alternatively, electromagnetic or electrostatictransducers or actuators could be used.

[0093] The other components 123 of the SPM system 100 also include a tipactuator control circuit 175. In selectively activating the tip 136 ofone of the SPM tools 137 of the SPM probe 122-1, the controller 114causes the control circuit to control the change in dimension of theengagement transducer 172 of the corresponding tip actuator 174 so thatit pushes up on the end of the lever arm 170 to which it is fixed. Inresponse, the lever arm pivots on the pivot 171 and, as shown in FIG. 8,the rounded end of the lever arm extends down through the aperture 159in the seat 158 of the holding plate 156 and into the correspondingaperture 132 of the probe. In doing so, the rounded end engages andpresses against the corresponding cantilever 136 so as to push down onit. As a result, the cantilever bends so that the tip 138 on thecantilever is moved below the lower surface 142 of the base 130 of theprobe and is activated for operation in inspecting the object 102.Similarly, the tip is selectively deactivated when the controllercontrols the change in dimension of the engagement transducer 172 of thecorresponding tip actuator so that it pulls down on the end of the leverarm to which it is fixed. In response, the lever arm pivots on the pivotand the rounded end of the lever arm extends up so that the cantileverbends up until the tip is located above the lower surface of the base.As a result, and tip is then protected against being damaged.

[0094] In alternative embodiment, each tool 137 of the probe 122-1 mayinclude an electrostatic (i.e., capacitive) tip actuator. Such a tipactuator would be configured and operate like the electrostatic tipactuators 162 of the gap sensors 164 of the probe, as shown in FIG. 18and described later.

Calibration with AFM Measurements

[0095] Turning now to FIG. 9, the calibration structures 128 include afirst calibration structure 128-1 that, referring to FIG. 1, may belocated on the rough positioning subsystem 104. And, it may be used tocalibrate and examine an activated tip 138 of the SPM probe 122-1 bycalibrating its position and examining its profile (or shape) todetermine whether it is defective. So that this may be done, thecalibration structure includes various reference substructures 180 to184 on its base 185. These reference substructures have differentshapes, sizes, orientations, and positions with respect to a preciselyknown reference location in the SPM system 100.

[0096] Turning again to FIG. 1, when the tip 138 of one of the SPM tools137 of the SPM probe 122-1 is to be used to inspect the object 102, theuser uses the user interface 116 to instruct the controller 114 to firsthave the positioning of the activated tip calibrated and its profileexamined. In response, the controller controls loading of the probe ontothe scanning head 120 and activation of the tip in the manner justdiscussed. Referring back to FIG. 9, the controller then calibratespositioning of the activated tip by controlling the positioning system103 to scan (or position) the activated tip over the referencesubstructures 180 to 184 of the calibration structure 128-1. As this isdone, an AFM measurement of the deflection of the cantilever 136 onwhich the activated tip is located is made at each scan point.

[0097] Referring to FIG. 5, in order to make these AFM measurements, theother components 123 of the SPM system 100 may include in each of thescanning heads 120 a cantilever deflection measurement system 200. Thecantilever deflection measurement system has optics that comprise alight source 201, lenses 202 and 203, and a photodetector 204. As iswell known to those skilled in the art, the optics 201 to 204 are usedas an interferometer to optically detect and measure the deflection ofthe cantilever 136. This kind of arrangement may be configured in themanner described in U.S. patent application Ser. No. 08/613,982referenced earlier where the light source and photodetector are locatedexternally from the scanning head. Alternatively, the cantileverdeflection measurement system may comprise components toelectrostatically (i.e., capacitively) detect and measure the cantileverdeflection.

[0098] The AFM measurements of the deflection of the cantilever 136 areused by the controller 114 to calibrate the activated tip 138 of the SPMprobe 122-1 for precise positioning of the tip with respect to thereference location and to examine its profile. This is done by producingan image of the calibration structure 128-1 from these measurements.This produced image is then compared with a stored reference image ofthe calibration structure which was produced similarly using a referencetip that was precisely scanned (or positioned) over the calibrationstructure with respect to the reference location and has a preciselyknown reference profile. The images are compared to determine thepositional offset between them. Based on the determined positionaloffset, precise positioning of the tip with respect to the referencelocation is then calibrated. Moreover, by comparing the resolution ofthe images, it can be determined if the tip is defective from wear ormalformation. If the tip is defective, then the tip of another tool ofthe probe may be activated, have its position calibrated, and beexamined to determine if it is defective in the manner just described.But, if all of the tips of the tools of the probe are defective, thenthe probe must be discarded and another probe will have to be loadedonto the scanning head 120 from one of the probe suppliers 124.Otherwise, if the activated tip is not defective, it can then be used toinspect the object 102.

[0099] Additionally, the position calibration technique just describedmay be used in combination with any of the other position calibrationsdescribed herein. This would be done to provide a particular optimalreference process in which a more precise position calibration isdetermined or in which the position calibration is derived in a shortertime.

Calibration using Reference SPM Probe 131

[0100] Furthermore, as shown in FIG. 10, in order to calibrate andexamine the activated tip 138 of the selected SPM tool 137, thecalibration structure 128-1 may also include a reference SPM probe 131.The reference SPM probe comprises a reference cantilever 136 connectedto and suspended over the base 185 of the calibration structure and areference tip 138 on the cantilever. The reference tip and cantilevermay be constructed like the activated tip and cantilever of the selectedSPM tool. The other components 123 of the SPM system 100 will theninclude another cantilever deflection measurement system 205 thatcomprises optics used in conjunction with the reference tip andreference cantilever. The optics comprise a light source 206 and aphotodetector 207. Like the optics 201 to 204 In each scanning head 120,these optics are used as an interferometer to optically detect andmeasure the deflection of the reference cantilever 136 of thecalibration structure. In order that the light provided by the lightsource be reflected by the cantilever, the light may be transparent tothe rough positioning apparatus and the base of the reference structurebut not transparent to the cantilever. Alternatively, if the light Isalso transparent to the cantilever, the optics would include areflective material on the cantilever that reflects the light. And, inan alternative embodiment, the cantilever deflection measurement systemmay comprise components to electrostatically (i.e., capacitively) detectand measure the deflection of the reference cantilever in the mannerdescribed later for the electrostatic deflection sensors 161 shown inFIG. 18 and described later.

[0101] Turning again to FIG. 1, in this case, the controller 114calibrates the position of the activated tip 138 of the SPM probe 122-1by controlling the positioning system 103 to scan the activated tip overthe reference tip 138 of the calibration structure 128-1. Referring toFIG. 10, as this occurs, the deflection of the reference cantilever 136is measured by the cantilever deflection measurement system 205 at eachscan point as just described. Since the reference tip is at a preciselyknown position with respect to the reference location, the AFMmeasurements of the deflection of the reference cantilever are used tocalibrate the precise position of the activated tip of the probe withrespect to the reference location and to examine the tip's profile.Specifically, the AFM measurements are used to produce an image of theactivated tip. From the produced image, the positional offset of theactivated tip at the known position of the reference tip can bedetermined. Based on this positional offset, the precise positioning ofthe tip with respect to the reference location is then calibrated.Moreover, from the produced image, it can be determined whether or notthe activated tip is defective.

[0102] Furthermore, the reference tip 138 can be made conductive in thesame manner was described earlier for the activated tip 138 of the SPMprobe 122-1. In this case, the position of the activated tip can becalibrated and its profile examined using STM measurements. This wouldbe done in the same manner was just described for making AFMmeasurements, except that STM measurements of the tunneling currentbetween the reference tip and the activated tip would be made to producean image of the activated tip. This would be done using the STMmeasurement circuit 213 in the manner described later.

[0103] Additionally, the position calibration technique just describedmay be used in combination with any of the other position calibrationsdescribed herein. This would be done to provide a particular optimalreference process in which a more precise position calibration isdetermined or in which the position calibration is derived in a shortertime.

Calibration Using SPM Probe 133

[0104] Turning now to FIG. 9, the calibration structure 128-1 mayinclude a reference SPM probe 133 for calibrating the position of andexamining the profile of the activated tip 138 of the SPM probe 122-1.This is done by generating a particle beam that strikes the activatedtip and collecting the secondary particles that result. The SPM probe133 is formed in the base 185 of the calibration structure and islocated at a precisely known location with respect to the referencelocation discussed earlier.

[0105] For example, the reference SPM probe 133 may be constructed likethe e-beam tool 382 of the eigth SPM probe 122-8 discussed later, exceptthat it has a duct 399 formed in the base 185 of the calibrationstructure. The duct is connected to the aperture 132 of the referenceSPM probe, as shown in FIG. 87. Referring to FIG. 1, the duct is alsoconnected to a corresponding flexible tube 345. Thus, when thecontroller 114 calibrates the position of the activated tip 138 of thefirst SPM probe 122-1, it causes the valve 346 to be opened so that thevacuum source 192 is in fluid communication with the aperture 132 of theSPM probe 133. As a result, a microvacuum chamber (i.e., zone or space)is created in the gap between the SPM probe 122-1 and the base 185. Thisis done in a similar way to that described in more detail forestablishing a gap between the first SPM probe 122-1 and the object 102using the apertures 132 in the first probe.

[0106] Then, referring to FIG. 9, the controller 114 controls thepositioning system 103 to scan the activated tip 138 over the referenceSPM probe 133. The other components 123 of the SPM system 100 furtherinclude a particle measurement control circuit 187, as shown in FIG. 43.The controller controls the particle measurement control circuit tocause the SPM probe to produce an e-beam that and detect any secondaryelectrons in the manner discussed later for the e-beam tool 382 of theSPM probe 122-8. The particle measurement control circuit makes aparticle measurement of the detected electrons and provides it to thecontroller. The controller collects the particle measurements andproduces an image of the activated tip in the same manner as aconventional particle microscope, such as an electron microscope. Fromthe produced image, the positional offset of the tip at the knownposition of the SPM probe can be determined. Based on this positionaloffset, the precise positioning of the tip with respect to the referencelocation is then calibrated. Moreover, from the produced image, it canbe determined whether or not the tip is defective.

[0107] Similarly, the reference SPM probe 133 could be constructed likeeach of the ion beam tools 450 of the eleventh SPM probe 122-11discussed later. Here, the position of the activated tip 138 would bedone in a similar manner to that just described. But, in this case, anion beam would be produced and secondary ions would be collected by sucha reference SPM probe in the manner discussed later for the eleventhprobe.

[0108] Additionally, the position calibration technique just describedmay be used in combination with any of the other position calibrationsdescribed herein. This would be done to provide a particular optimalreference process in which a more precise position calibration isdetermined or in which the position calibration is derived in a shortertime.

Calibration with Radiation Measurements

[0109] The position of the activated tip 138 of the SPM probe 122-1 mayalso be calibrated in another way. In order to do this, the SPM system100 includes another calibration structure 128-2 that, like the firstcalibration structure 128-1, may be located on the rough positioningsubsystem 104. As shown in FIG. 11, this calibration structure mayinclude one or more reference materials 189 on an insulating material199 on the base 190 of the reference structure. Each reference materialhas a precisely known position with respect to the reference location.And, each reference material may comprise a material that has knownradiation properties when light interacts with it. For example, this maybe a material with known light absorption properties or known lightreflection properties. Furthermore, this may be a material with knownlight frequency altering properties. For example, such a material may bea frequency doubling material, such as gallium arsenide or galliumnitride. Or this material could be a fluorescing material or a materialwhich produces second harmonic or Raman characteristics when lightinteracts with it.

[0110] Referring to FIG. 5, as alluded to earlier, the probe 122-1 isused for making radiation measurements and includes a lens 147 over eachtip 138 for doing so. In addition, in order to make radiationmeasurements, the measurement components include measurement optics 224comprising a light source 208, a photodetector 209, and mirrors 210 and211 which are all located in the scanning head 120 and optically coupledtogether. But, these optics and the lens over an activated tip may alsobe used to calibrate the position of the tip.

[0111] Turning again to FIG. 1, in this case, the controller 114calibrates the position of the activated tip 138 by controlling thepositioning system 103 to attempt to position the tip over one of thereference materials 189 of the calibration structure 128-2. Then,referring to FIG. 5, the controller controls the light source 208 toprovide radiation in the form of a narrow beam of light with a desiredwavelength (i.e., frequency) spectrum. The narrow beam of light isdirected to the lens 147 of the probe 122-1 by the mirror 210. The lensfocuses the narrow beam of light within the activated tip 138. The tipacts as an antenna or waveguide and the focused light propagates throughthe tip until it is emitted by the tip's aperture, which was describedearlier. The emitted light then optically interacts with the referencematerial. The resulting light from the optical interaction is capturedby the tip's aperture and propagates back through the tip to the lens.The lens then directs the resulting light to the mirror 210 whichre-directs it to the other mirror 211. This mirror then directs theresulting light to the photodetector 209 which detects it and makes NSOMmeasurements of its constituent wavelengths. These NSOM measurements arefurther described in U.S. patent application Ser. No. 08/906,602, U.S.patent application Ser. No. 08/412,380, and PCT Application No.PCT/US95/09553 referenced earlier.

[0112] And, referring to FIG. 11, in an alternative embodiment, theother components 123 of the SPM system 100 may include a radiationmeasurement system 389 which is used instead of the photodetector 209 todetect the resulting light from the optical interaction of the lightemitted by the tip and the reference material. Or, the resulting lightmay be detected using one of the SPM probes 122-14,122-15, or 122-16 inthe manner described later. In this case, the narrow beam of light maybe chopped or modulated in a characteristic way by the light source 208.Then, this chopping or modulation is reproduced in the radiationmeasurement system 389 or the radiation measurement circuit 514 usedwith the SPM probes 122-14, 122-15, or 122-16 so that the excitationand/or resulting radiation can easily be distinguished from thebackground or noise radiation by the radiation measurement system.

[0113] Furthermore, in another embodiment, rather than using the mirrors210 and 211, a fiber optic guide may be used to deliver the light to theactivated tip 138 and direct the resulting light back to thephotodetector. Additionally, a fresnel lens integrated in the cantileverover the tip could be used rather than the refractive lens 147 to focusthe narrow beam of light within the tip and direct the resulting lightfrom the optical interaction with the reference material back to thefiber optic guide. Such a configuration is described in U.S. patentapplication Ser. No. 08/281,883, U.S. patent application Ser. No.08/412,380, and PCT Application No. PCT/US95/09553 referenced earlier.

[0114] From the radiation measurements made by either the photodetector209, the radiation measurement system 389, or one of the SPM probes122-14,122-15 or 122-16, the controller 114 generates a spectrum of themeasured wavelengths (i.e., frequency spectrum) and compares thegenerated spectrum and its intensity (i.e., amplitude) with a storedknown reference spectrum of wavelengths for radiation that results whenlight with the same wavelength spectrum as the narrow beam of lightoptically interacts with the reference material 189. If they match andthe intensity is maximized, this means that activated tip 138 waspositioned directly over the reference material. Thus, in a closedfeedback loop, the tip is positioned, the light is emitted from the tip,the wavelengths and the intensity of the resulting radiation aremeasured, and the generated and reference spectrums are compared in themanner just described until it is determined by the controller that thetip is in fact positioned over the reference material. Since the tipwill be positioned in very small motions about the reference material189, the use of the chopped or modulated narrow beam of light is veryhelpful in this process because the resulting radiation and itsintensity can be easily measured independent of noise.

[0115] Once it is determined by the controller that the tip 138 ispositioned over the reference material 189, the positional offset of theactivated tip at the known position of the reference material isdetermined. Based on this positional offset, the precise positioning ofthe tip with respect to the reference location is then calibrated.

[0116] Since there may be more then one reference material 189, theprocess just described may be repeated for each of these referencematerials. In this way, the results of the calibrations computed for allof the reference materials may be combined to provide a weighted oraveraged calibration of the position of the activated tip 138.

[0117] The second calibration structure 128-2 may additionally includeone or more reference radiation detection devices 460 formed on theinsulating material 199 of the base 190 of the calibration structure.Each radiation detection device has a precisely known position withrespect to the reference location. More specifically, referring to FIG.52, each radiation detection device includes an aperture structure 466and a semiconductor radiation detector 463 formed on the insulatingmaterial. The aperture structure blocks (or absorbs) extraneousradiation from contacting the radiation detector and is grounded by theradiation measurement circuit 181. But, it also allows radiation that isdirected to the radiation detector to pass through the aperture 467 inthe aperture structure and contact the radiation detector. The radiationdetector may comprise a radiation sensitive semiconductor junction diodeor junction transistor, such as a photodiode or phototransistor, that isformed in the manner well known to those skilled in the art and in themanner described in “Radiation Detection and Measurement”, by Glenn F.Knoll, Wiley, New York, 1979, Ch. 11, pp. 359-413, Ch. 2, pp. 39-78. Theradiation detector may be suitably doped and constructed to detect awide spectrum of radiation or selected kinds of radiation. Here, theradiation detector detects radiation in the form of light that passesthrough the aperture.

[0118] Turning again to FIG. 1, in this case, the controller 114calibrates the position of the activated tip 138 in a similar way tothat just described. Here, however, the controller controls thepositioning system 103 to attempt to position the tip over one of theradiation detection devices 460. Then, referring to FIG. 5, thecontroller causes light to be emitted from the tip's aperture in themanner just discussed. The radiation detector then provides a signalrepresenting the light it detects to a radiation measurement circuit181. The radiation measurement circuit is one of the other components123 of the SPM system 100 and makes a measurement of the detected light.It then provides this measurement to the controller 114 which analysesthe measurement to determine if the radiation detector detected thelight emitted by the tip. Thus, in a closed feedback loop, the tip ispositioned, the light is emitted by the tip, and the measurement fromthe radiation measurement circuit is analyzed in the manner justdescribed until it is determined by the controller that the tip is infact positioned over the reference material. Once this occurs, apositional offset is computed and the precise positioning of the tipwith respect to the reference location is then calibrated based on thepositional offset in the manner just described.

[0119] If there are multiple radiation detection devices 460 fordetecting light, the results of the calibrations computed for all of theradiation detection devices may be combined to provide a weighted oraveraged calibration of the position of the activated tip. Or, thecontroller 114 compares the relative intensities or time of flights ofthe radiation detected by the radiation detection devices to determinewhich one is close to the tip.

[0120] Additionally, the position calibration technique just describedmay be used in combination with any of the other position calibrationsdescribed herein. This would be done to provide a particular optimalreference process in which a more precise position calibration isdetermined or in which the position calibration is derived in a shortertime.

Calibration with STM Measurements

[0121] Referring to FIG. 10 again, the second calibration structure128-2 also includes one or more other reference structures 191 that maybe used to calibrate the position of the activated tip 138. Thesereference structures are formed on an insulating material 199 on thebase 190 of the calibration structure. The reference structures may eachcomprise a conductive tip at precisely known position with respect tothe reference location. Each conductive tip is coated with a conductivematerial with known conductive properties and is connected to an STMmeasurement circuit 213. The STM measurement circuit is one of the othercomponents 123 of the SPM system 100.

[0122] As discussed earlier, the SPM probe 122-1 may be used to make STMmeasurements. As shown in FIG. 4, depending on which is conductive, theobdurate coating 146 or the reflective coating 143 of each tip of theprobe 122-1 is coupled to the STM measurement circuit 213. Thus, anactivated tip 138 of the probe may have its position calibrated by usingit to make STM measurements with the reference structures 191 on thecalibration structure 128-2.

[0123] Specifically, referring again to FIG. 1, the controller 114calibrates the position of the activated tip 138 of the SPM probe 122-1by controlling the positioning system 103 to attempt to position theactivated tip over one of the reference structures 191 of thecalibration structure 128-2. Then, referring to FIG. 10, the controllercontrols the STM measurement circuit 213 to apply a specific voltageacross whichever of the obdurate coating 146 and the reflective coating143 of the tip is conductive and the reference structure so as togenerate and measure a tunneling current between them. The controllercompares the generated STM measurement with a stored precisely knownreference measurement of a tunneling current between the referencestructure and a reference tip caused by the same voltage. If they match,this means that activated tip 138 was positioned directly over thereference material. Thus, in a dosed feedback loop, the tip ispositioned and the generated and reference STM measurements are comparedin the manner just described until it is determined that the tip is infact positioned over the reference structure. Once this occurs, thepositional offset of the activated tip at the known position of thereference structure is determined. Based on this positional offset, theprecise positioning of the tip with respect to the reference location isthen calibrated.

[0124] Also, since there may be more then one reference structure 191,the process just described may be repeated for each of these referencestructures. Thus, as with the reference materials 189, the results ofthe calibrations computed for all of the reference structures 191 may becombined to provide a weighted or averaged calibration of the positionof the activated tip 138.

[0125] Additionally, the reference structures 191 may also be used tocalibrate the activated tip 138 of the SPM probe 122-1 for making STMmeasurements. Specifically, the controller 114 controls the generatingof an STM measurement of the tunneling current between the activated tipand one of the reference structures 191 in the manner just described.Then, the controller compares this generated STM measurement with thereference measurement described earlier to determine the offset betweenthem. Based on this offset, the precise tunneling current between theactivated tip and the object 102 can be calibrated for making STMmeasurements. And, this process may be repeated for each of thereference structures. Thus, similar to the position calibration usingthese reference structures, the results of the STM measurementcalibrations computed for all of these reference structures may becombined to provide a weighted or averaged STM measurement calibrationfor the activated tip.

[0126] Additionally, the position calibration technique just describedmay be used in combination with any of the other position calibrationsdescribed herein. This would be done to provide a particular optimalreference process in which a more precise position calibration isdetermined or in which the position calibration is derived in a shortertime.

Tip Machining Structures

[0127] As mentioned earlier, the components of the SPM system 100 mayinclude one or more tip machining structures 121. As shown in FIG. 84,such a tip machining structure includes abrasive and chemical lappingmicrostructures 820 and 821 on a base 822 of the structure. Theselapping structures may be used to machine the activated tip 138 of theSPM probe 122-1 to sharpen and/or shape it.

[0128] The abrasive lapping microstructures 820 may be used toabrasively remove (or lap) material from the activated tip 138. Forexample, as shown in FIG. 85, such a lapping microstructure may beshaped like the tip. Then, the controller 114 controls the positioningsystem 103 to move the tip so that it rubs against the lappingmicrostructure. This abrasively shapes and/or sharpens the tip. Forexample, the abrasive lapping microstructure may comprise silicon and beused to shape and/or sharpen the obdurate coating 146 of the tip.

[0129] Similarly, the chemical lapping microstructures 821 may be usedto chemically remove (or lap) material from the activated tip 138. Asshown in FIG. 85, such a lapping microstructure may also be shaped likethe tip. Similar to the abrasive lapping microstructure 820, thecontroller 114 controls the positioning system 103 to move the tip sothat it rubs against the chemical lapping microstructure. Thischemically shapes and/or sharpens the tip. For example, the chemicallapping microstructure may comprise iron and be used to shape and/orsharpen the diamond coating 146 of the tip by chemically dissolving it.

[0130] As those skilled in the art will recognize, this may be donesimilarly for the tips 138,238, 242, and 320 of any of the SPM probes122-1 to 122-7, 122-17, and 122-18 described herein.

Calibration with Force Balance 128-3

[0131] Referring to FIG. 12, the calibration structures 128 include ananostructured force balance (or sensor) 128-3 for calibrating theactivated tip and the cantilever 136 on which it is located for AFMoperation. The force balance includes an electrostatically (i.e.,capacitively) and mechanically displacible (i.e., moveable) balanceplatform 214. It also includes a suspension system 225 that comprisesspring arms (or crab legs) 215. Each spring arm has one end coupled tothe balance platform. As shown in FIG. 13, the force balance alsoincludes a base 216 and anchors 217. The other end of each spring arm iscoupled (i.e., anchored) to the base with a corresponding anchor. As aresult, the spring arms displacibly (i.e., moveably) suspend the balanceplatform over the base so that it can be displaced.

[0132] Referring still to FIG. 13, the force balance 128-3 includes a Zdimension lower displacement actuator/sensor 227 that comprises astationary lower plate electrode 218 and a displaceable plate electrode220 that is also part of the balance platform 214. The lower plateelectrode is formed on an insulating plate 219 on the base 216 and isthereby connected to the base. The lower plate electrode and thedisplaceable plate electrode together form a capacitor.

[0133] The force balance 128-3 also includes a Z dimension upperdisplacement actuator/sensor 229 that comprises insulating supportanchors 221, a stationary upper plate electrode 223, and thedisplaceable plate electrode 220 just mentioned. The support anchors areanchored to the base and fixedly support the cantilevered electrodes 222that form the stationary upper plate electrode. As a result, theyconnect the cantilevered electrodes to the base and suspend thecantilever electrodes over the balance platform. The upper plateelectrode and the displaceable plate electrode together form acapacitor.

[0134] The upper displacement actuator/sensor 229 may be used todisplace (or move) the balance platform 214 in the Z dimension in adirection up away from the base 216 and may be used to sensedisplacement (or movement) of the balance platform in this direction.Similarly, the lower displacement actuator/sensor 227 may be used todisplace the balance platform 214 in the opposite direction in the Zdimension down toward the base 216 and may also be used to sensedisplacement of the balance platform in this direction.

[0135] Specifically, in the case of the displacement actuator/sensor227, when a differential voltage is applied between the displaceableplate electrode 220 and the stationary plate electrode 218 in adisplacement actuating mode, a corresponding electrostatic force iscaused which electrostatically (i.e., capacitively) displaces thebalance platform 214 down toward the stationary lower plate electrode inthe Z dimension. Alternatively, in a displacement sensing mode, thechange in the voltage between the displaceable plate electrode and thestationary lower plate electrode can be electrostatically (i.e.,capacitively) sensed to measure the displacement of the balance platformin the Z dimension. Similarly, in the case of the displacementactuator/sensor 229, an electrostatic force is caused whichelectrostatically (i.e., capacitively) displaces the balance platform uptoward the cantilevered electrodes 222 in the Z dimension when acorresponding differential voltage is applied between the displaceableplate electrode and the cantilevered electrodes in a displacementactuating mode. And, in a displacement sensing mode, the displacement ofthe balance platform in the Z dimension can be electrostatically (i.e.,capacitively) sensed by measuring the change in the voltage between thedisplaceable plate electrode and the cantilevered electrodes.

[0136] Turning back to FIG. 12, the force balance 128-3 also includes Xand Y dimension displacement actuators/sensors 230. The X dimensionactuators/sensors may be used to cause and sense displacement of thebalance platform 214 in opposite directions in the X dimension.Similarly, the Y dimension actuators/sensors may be used to cause andsense displacement of the balance platform in opposite directions in theY dimension.

[0137] Each of the displacement actuators/sensors 230 includes adisplaceable comb structure 232 that is part of and fixed to the balanceplatform and a corresponding stationary comb structure 234 that isformed on the insulating plate 219. The fingers of each of thedisplaceable comb structures are interdigitized with (i.e., alignedbetween) the fingers of the corresponding stationary comb structure.

[0138] Each pair of corresponding displaceable and stationary combstructures 232 and 234 forms an electrostatic (i.e., capacitive) combdrive of the type described in “Electrostatic Comb Drive for ResonantSensor and Actuator Applications”, University of California at BerkeleyDoctoral Dissertation, by William Chi-Keung Tang Nov. 21, 1990, which ishereby explicitly incorporated by reference. This type of electrostaticcomb drive is also described in U.S. patent application Ser. No.08/506,516 and PCT Application No. PCT/US96/12255 referenced earlier. Inparticular, the stationary and displaceable comb structures are made tobe conductive. Thus, when a differential voltage is applied across apair of corresponding stationary and displaceable comb structures in adisplacement actuating mode, their comb fingers interactelectrostatically (i.e., capacitively) with each other and cause anelectrostatic force. This force causes the displaceable comb structureto move in a linear direction toward the stationary comb structure inthe corresponding X or Y dimension. Alternatively, in a displacementsensing mode, the differential voltages across a pair of correspondingstationary and displaceable comb structures can be electrostatically(i.e., capacitively) sensed to measure the displacement of the balanceplatform in the corresponding X or Y dimension. Since the displaceablecomb structures are fixed to each side of the balance platform,displacement of the balance platform can be electrostatically (i.e.,capacitively) caused or sensed in both directions in the X dimension andin both directions in the Y dimension.

[0139] The force balance 128-3 also includes a balance control circuit253. In response to control signals from the controller 14, the balancecontrol circuit controls the voltages (i.e., the electrostatic forces)applied to the balance platform 214 by any of the displacementactuators/sensors 227, 229, and 230. Additionally, the balance controlcircuit measures any displacements of the balance platform in the X, Y,and Z dimensions from the changes in voltages sensed by thesedisplacement actuators/sensors. In response, the balance control circuitgenerates displacement measurement signals that are provided to thecontroller and represent these measured displacements. The controlcircuit is preferably located on the base 216 of the force balance tominimize the amount of stray capacitances which may affect the operationof the control circuit.

[0140] In alternative embodiments, the Z dimension lower and upperdisplacement actuators/sensors 227 and 229 may each comprise a combdrive with displaceable and stationary comb structures like those of theX and Y dimension displacement actuators/sensors 230. Conversely, the Xand Y dimension displacement actuators/sensors may comprise displaceableand stationary plate electrodes like those of the Z dimension lower andupper displacement actuators/sensors. In other embodiments,piezoresistors or piezoelectric bimorphs could be used as displacementactuators in the X, Y, and Z dimensions to cause displacements in the X,Y, and Z directions.

[0141] Furthermore, referring to FIG. 13, the balance platform 214 mayinclude insulating bushings (or dimples) 236 that extend out from thedisplaceable electrode plate 220. The bushings that extend out from theupper surface of the displaceable plate electrode prevent it fromcontacting the stationary plate electrode 218 when it is pulled downtoward the stationary plate electrode so as not to cause a shortcircuit. Similarly, the bushings that extend out from the lower surfaceof the displaceable plate electrode prevent it from contacting thecantilevered electrodes 222 and thereby not causing a short circuit thisway.

[0142] The displaceable electrode plate 220 and the displaceable combstructures 232 may be formed from the same semiconductor material, suchas polysilicon, which is conductive. In this way, the displaceableelectrode plate and the displaceable comb structures are electricallyconnected together. In this way, the same voltage (preferably ground)can be applied to the displaceable plate electrode and the moveable combstructures so that differential voltages can be conveniently applied andmeasured across these structures and the stationary plate electrode 218,the cantilevered electrodes 222, and the stationary comb structures 234.Moreover, the stationary plate electrode and the cantilevered electrodesmay also be formed from a conductive material, such as polysilicon madeor tungsten, while the stationary comb structures would be formed fromthe same conductive material as the moveable comb structures. Theinsulating plate 219, the insulating support anchors 221, the spring armsupport anchors 217, and the insulating bushings 236 may be formed froman insulating material, such as silicon dioxide.

[0143] Additionally, in order to prevent particles from effecting theoperation of the force balance 128-3, it includes an enclosure 233. Theenclosure is connected to the base 216 and prevents entry of particlesinto the force balance.

[0144] In order to enable the force balance to operate properly, theenclosure 233 includes a flexible membrane (or diaphragm) 235 that isflexible in the X, Y, and Z dimensions. In this way, contact can be madewith the contact platform 214 via the membrane so that displacement ofthe balance platform in the X, Y, and Z dimensions due to the contactwill not be impeded. Specifically, the flexible membrane includes aconnector portion 257, a spring portion 255, and a contact portion 241,as shown in FIG. 14. The contact portion is the portion of the membraneto which contact is made in order to cause displacement of the balanceplatform 214. The connector portion is connected to the main body 243 ofthe enclosure. The spring portion is connected between the connector andcontact portions. The spring portion is corrugated and acts as a springin the X and Y dimensions. This makes the membrane flexible through avery limited range all of the X, Y, and Z dimensions. Referring to FIG.15, the connector, spring, and contact portions of the membrane areannular.

[0145] Referring back to FIG. 13, the enclosure 233 has an opening 245to maintain a constant pressure within the enclosure during operation ofthe force balance 128-3. The enclosure further includes a filter 247that extends across the opening and prevents any particles from enteringinto the enclosure through the opening.

[0146] In order to enable the contact platform 214 to be contactedthrough the enclosure 233 via the membrane 235, the contact platform 214further comprises a contact portion 238 that protrudes out from thedisplaceable plate electrode 220 passed the cantilevered electrodes 222.In order to prevent wear of the balance platform 214, the contactportion may comprise an obdurate material, such as diamond, siliconcarbide, carbon nitride, or diamond like carbon. In this case, thecontact portion is formed on the plate electrode in a similar manner tothat discussed earlier for the obdurate coating 146 of the tips 138 ofthe probe 122-1.

[0147] Turning again to FIG. 1, the user may use the user interface 116to instruct the controller 114 to calibrate the first SPM probe 122-1for the forces that are imparted by its activated tip 138 in response tocorresponding positioning displacements in the position of the probe.This may be done in order to calibrate the probe for making SPMmeasurements, in particular AFM measurements, and SPM modifications, aswill be explained later.

[0148] Referring back to FIGS. 5 and 12, the controller calibrates theseforces by selectively controlling the positioning system 103 and the X,Y, and Z dimension displacement actuators/sensors 227, 229, and 230 toselectively apply opposing contact and actuator forces to the balanceplatform 214 of the force balance 128-3 while the activated tip is incontact with the balance platform. The contact forces are caused bypositioning displacements in the position of the probe made with thepositioning system. The actuator forces are electrostatic forces appliedby the X, Y, and Z dimension displacement actuators/sensors 227, 229,and 230. The cantilever deflection measurement system 200 or the X, Y,and Z displacement actuators/sensors may be used to monitor the contactand actuator displacements of the balance platform due to the appliedcontact and actuator forces. As those skilled in the art will recognize,this calibration may be done in a number of ways.

[0149] For example, this can be done in a first DC mode. Specifically,the SPM system 100 is operated in a simple closed feedback loop usingthe positioning system 103, the cantilever deflection measurement system200, and the X, Y, and Z dimension actuators/sensors 227, 229, and 230.The controller 114 initially controls the positioning system 103 toposition the SPM probe 122-1 at a reference position where the activatedtip 138 just contacts the balance platform 214 (via the membrane 235)without any bending of the cantilever 136 being measured by thecantilever deflection measurement system. Then, the controller 114causes a known value of actuator force in the Z dimension to be appliedto the balance platform by the upper Z dimension actuator/sensor 229.This causes an actuator displacement of the balance platform up towardthe cantilevered electrodes 222 in the Z dimension. The contactdisplacement of the balance platform can be measured with the cantileverdeflection measurement system by measuring the correspondingdisplacement of the tip. Alternatively, this displacement can be sensedby the lower Z dimension displacement actuator/sensor 227 and measuredby the balance control circuit 253. In response to the measureddisplacement, the positioning system causes a positioning displacementin the position of the probe so that the cantilever 136 bends and theactivated tip applies an opposing contact force to the balance platform.This causes an opposing contact displacement of the balance platformwhich is measured in the same way as the actuator displacement. Thecontroller monitors the measured contact and actuator displacements forthe point as they are nulled out by each other. The actuator force andthe positioning displacement of the probe are recorded at this nullpoint. Since the contact and actuator forces are also nulled out by eachother, the value of the actuator force at this point is a measure of thecontact force that is normal to the balance platform. This process isthen repeated for other known values of the actuator force so that aforce calibration table of contact forces in the Z direction andcorresponding positioning displacements is recorded.

[0150] This process is done in a similar manner in the X and Ydimensions using the X and Y dimension displacement actuators/sensors230. In this case, one of the X dimension displacement actuators/sensorsis used as an actuator to cause actuator displacement of the balanceplatform in the X dimension while the other one is used to sense theactuator and contact displacements of the balance platform in the Xdimension. Similarly, in the Y dimension, one of the Y dimensiondisplacement actuators/sensors is used as an actuator to cause actuatordisplacement of the balance platform in the Y dimension while the otherone is used to sense the actuator and contact displacements of thebalance platform in the Y dimension. Here, the recorded contact forcesare lateral forces. For example, these forces may include a cuttingforce when a tip 138, 238, and 320 of one of the SPM probes 122-1 to122-7 is used to make a cut in or mill the contact portion 238 of thecontact platform 214 in the manner described herein. These forces couldalso be stiction and friction forces.

[0151] As a result, a complete force calibration table of contact forcesand corresponding positioning displacements can be compiled in this way.In other words, each contact force for a corresponding positioningdisplacement has normal and lateral components in the X, Y, and Zdirection. For example, this complete force calibration table mayidentify the machining characteristics for the tip 138,238, and 320 ofone of the SPM probes 122-1 to 122-7 discussed herein.

[0152] In a second DC mode, the SPM probe 122-1 is positioned initiallyat the reference position as in the first DC mode just discussed. Then,the controller 114 causes the positioning system 103 to cause a knownpositioning displacement in the position of the probe. As a result,. thecantilever 136 bends and the activated tip applies a contact force tothe balance platform which causes a contact displacement of the balanceplatform in the X, Y, and Z dimensions. This contact displacement ismeasured in the manner discussed earlier. In response to the measuredcontact displacement, the controller causes an opposing actuator forcein the X, Y, and Z dimensions to be applied to the balance platform bythe upper Z dimension actuator/sensor 229. This causes an opposingactuator displacement of the balance platform in the X, Y, and Zdimensions which is measured in the manner discussed earlier. As in thefirst DC mode, the controller then records the value of the actuatorforce and the positioning displacement of the probe at the point wherethe measured contact and actuator displacements are nulled out by eachother. This process is then repeated for other known displacements ofthe probe so that a complete force calibration table of contact forcesin the X, Y, and Z dimensions and corresponding positioningdisplacements is recorded.

[0153] In the DC modes just described, the lower Z dimensiondisplacement actuator/sensor 227 is not needed and the force balance128-3 could be constructed without them. But, in variations of the DCmodes just described, the lower Z dimension displacement actuator/sensor227 can be used to perform these modes at a biased reference position.In these modes, the SPM probe 122-1 is positioned at a referenceposition where the activated tip 138 does contact the balance platform214 with bending of the cantilever 136. Then, the controller 114 causesthe lower Z dimension displacement actuator/sensor to apply an actuatorforce to the balance platform. This causes an actuator displacement ofthe balance platform down toward the base 216. The controller monitorsthe deflection of the cantilever measured by the cantilever deflectionmeasurement system. Then, at the point where no more bending of thecantilever is detected by the controller, the above DC modes areperformed.

[0154] An AC mode may also be used to calibrate the activated tip 138.In this mode, the controller 114 first causes the lower Z dimensiondisplacement actuator/sensor 227 to apply a reference actuator forcewith a known value to the balance platform 214 while the activated tipis not in contact with the balance platform. This causes the balanceplatform to be displaced in the Z dimension down toward the base 216.Then, while this force is still being applied without contact by thetip, the controller causes the balance platform to oscillate up and downin the Z dimension. This is done by causing the lower and upper Zdimension displacement actuators/sensors 227 and 229 to alternatelyapply actuator forces in the Z dimension to the balance platform. Thefrequency at which these forces are alternately applied is varied untilthe resonant frequency of oscillation is found. The known value of thereference actuator force and the resonant frequency are then recorded.This process is then repeated for other known values of the referenceactuator force so that a Z dimension reference table of actuator forcesin the Z dimension and corresponding resonant frequencies is recorded.

[0155] This process is similarly performed in the X and Y dimensions toobtain X and Y dimension reference tables of reference actuator forcesin the X and Y dimensions for corresponding resonant frequencies.However, in the X dimension, the X dimension displacementactuators/sensors are used to cause actuator displacements of thebalance platform in the X dimension. Similarly, the Y dimensiondisplacement actuators/sensors are used to cause actuator displacementsof the balance platform in the Y dimension.

[0156] Then, the SPM probe 122-1 is positioned initially at a referenceposition as described earlier without bending of the cantilever 136. Thecontroller 114 then causes the positioning system 103 to cause a knownpositioning displacement in the position of the probe from the referenceposition. As described earlier, this causes the cantilever 136 to bendand the activated tip applies a contact force to the balance platformwhich causes a contact displacement of the balance platform in the X, Y,and Z dimensions. The controller then causes the balance platform to beoscillated in the X, Y, and Z dimensions in the manner just described.The frequencies at which the actuator forces are alternately applied inthe X, Y, and Z dimensions are varied until the resonant frequencies ofoscillation in the X, Y, and Z dimensions are found. The referenceactuator forces in the X, Y, and Z dimension reference tables thatcorrespond to these resonant frequencies are measures of the componentsin the X, Y, and Z dimensions of the contact force applied to thecontact platform. These components are recorded as the contact force forthe corresponding positioning displacement of the probe. This process isthen repeated for other known positioning displacements to obtain acomplete force calibration table of contact forces and correspondingpositioning displacements.

[0157] The forces calibrated with the force balance 128-3 in the mannerjust described are at the micro, nano, pico, and femto Newton level.Thus, as those skilled in the art will recognize, the SPM system 100 canbe used with the force balance 128-3 as a force measurement system tomeasure a contact force applied by an object to the balance platform 214of the force balance 128-3. The controller 114 then causes the resultingcontact and actuator displacements of the balance platform to be nulledin the manner described earlier. The value of the actuator force appliedto cause this nulling effect is a measure of the contact force. Thus,this process could be used to simply measure the weight of an object atthe micro, nano, pico, and femto Newton level which is placed on thebalance platform. Or, it can be used in an inertial sensor to measure aninertial input that causes a corresponding displacement of an element ofthe inertial sensor that contacts the balance platform.

[0158] Furthermore, a similar procedure can be used to calibrate theforce balance 128-3. Specifically, a contact force with a known valuecan be applied to the balance platform 214 to cause the contactdisplacement. The controller 114 then causes the resulting contact andactuator displacements of the balance platform to be nulled in themanner described earlier using the lower Z dimension displacementactuator/sensor 227. The value of the voltage applied to the lower Zdimension displacement actuator/sensor in order to cause the actuatorforce corresponding to the actuator displacement is recorded along withthe known value of the contact force. The known value of the contactforce is a measure of the value of the actuator force. This process isrepeated for other contact forces with known values to create acalibration table of voltage values and corresponding actuator forcevalues. This calibration table is then used in the above DC and AC modesto apply actuator forces with known values. This process is repeated forthe other displacement actuators/sensors 229 and 230.

[0159] The force balance 128-3 was described previously for use inmeasuring or calibrating forces in the X, Y, and Z dimensions. However,as those skilled in the art will recognize, the force balance 128-3 canbe used to measure or calibrate forces in only one or two dimensions aswell. In this case, the force balance could be constructed without thoseof the displacement actuators/sensors 227, 229, and 230 for thecorresponding dimension(s) not needed.

[0160] Additionally, the force balance 128-3 was described for use incalibrating the contact forces applied by the tip 138 of an SPM probe122-1. However, it may be more generally used to calibrate the contactforces applied by any object which has a contact portion (e.g., the tipof the probe) and a positionable portion (e.g., the base 130 or theprobe) and a spring portion (e.g., the cantilever) that connects thecontact and positionable portions. More specifically, it could be usedto calibrate the contact forces applied by the contact portion of theobject with respect to positioned displacements of the positionableportion of the object.

Imaging Optics

[0161] Referring to FIG. 5, each scanning head 120 has imaging optics226. The imaging optics are used to make an optical image of the objectfor properly inspecting the object 102 with the probe 122-1. Theseoptics include image forming optics 228 and the lenses 202 and 203. Theimage forming optics may be conventional or confocal image formingoptics as found in a conventional or confocal microscope. This kind ofarrangement may be configured in the manner described in U.S. patentapplication Ser. No. 08/613,982 referenced earlier where the imageforming optics are located externally from the scanning head.

[0162] The imaging optics 226 may be used to produce a low magnificationoptical image of the object 102 or a calibration structure 128.Specifically, the controller 114 causes the positioning system to scanthe object 102 or a calibration structure 128 with the scanning head120. At each scan point, the image forming optics 228 causes light to bedirected to the lenses 202 and 203 which focus the light on the objector calibration structure. The resulting light reflected by the object orcalibration structure is directed back to the image forming optics bythe lenses. The image forming optics detects this resulting light and inresponse forms an optical image of the object or calibration structure.This optical image is then provided to the controller.

[0163] The optical images produced by the imaging optics 226 may be usedby the controller 114 in various ways. They may be used in conjunctionwith SPM measurements to inspect the object in the manner described inU.S. patent application Ser. Nos. 08/906,602, 08/885,014, 08/776,361,and 08/613,982. Or, they may be used to produce complete images of themodifications being made to the object or the calibrations being made tothe probe 122-1. Specifically, the image optics may be used to findreference points and/or specific (optically) resolvable structures to bemodified and/or inspected.

SPM Inspections with SPM Probe 122-1

[0164] Referring again to FIG. 1, after calibrating the activated tip138 of the probe 122-1 for making SPM measurements, it may be used toinspect the object 102 by performing SPM measurements of the object.Thus, when the user instructs the controller 114 with the user interfaceto use the activated tip to perform SPM measurements, the controllercontrols the positioning subsystem 103, the corresponding components 123of the SPM system 100, and, as needed, the probe in inspecting theobject 102. This is done by causing the probe to be scanned over theobject and the desired SPM measurements of the object to be made atselected scan points.

[0165] For example, turning to FIG. 5, the SPM measurements may includeAFM measurements made by scanning the activated tip 138 over the surface166 of the object 102 and measuring the deflection of the cantilever 136on which the tip is located at selected scan points. This is done withthe cantilever deflection measurement system 200 in the same way asdescribed earlier for calibrating the positioning of the tip 138.Moreover, this may be done using the force calibration table generatedduring calibration and described earlier.

[0166] Furthermore, the SPM measurements may also include STMmeasurements made by scanning the activated tip 138 over the surface 166of the object 102 and causing and measuring a tunneling current betweenthe activated tip and the object at selected scan points. This is donewith the STM measurement circuit 213 in the same way as describedearlier for calibrating the positioning of the tip 138.

[0167] The SPM measurements may also include radiation measurements madeby scanning the activated tip 138 over the surface 166 of the object 102and causing optical interaction between the tip and the object 102 atselected scan points. This may done in the manner discussed earlier forcalibrating the position of the tip.

[0168] The SPM measurements just described may be combined together orused separately by the controller 114 to generate the inspection datafor the object 102. As described earlier, this may include an image ofthe object and/or various analysis of the object and may be done in themanner described in U.S. patent application Ser. Nos. 08/906,602,08/885,014, 08/776,361, and 08/613,982 referenced earlier.

[0169] For example, the AFM, STM, and radiation measurements may becombined to generate an image of the object with the AFM measurementsbeing used to produce the basic image and the STM and radiationmeasurements being used to supplement the basic image. The AFMmeasurements would provide information about the heights of the surfaceat the various scan points. The STM measurements would provideinformation on the electrical properties of the object with which tosupplement the basic image and the radiation measurements would provideinformation on the composition of the object (from the measuredwavelength spectrum) with which to supplement the basic image. Inaddition, if the narrow beam of light used in producing the radiationmeasurements is rotationally polarized, as described in the patentapplications just referenced, then the radiation measurements can beused to identify deep surface features, such as a pit, wall, orprojection, and supplement the basic image with this information.Additionally, the STM measurements could simply be used by themselves togenerate an electrical map or analysis of the object's conductivity andelectrical properties according to the positioning of the tip in makingthe STM measurements. And, the radiation measurements could be used togenerate a compositional analysis on the composition of the objectmapped according to the positioning of the tip in making the radiationmeasurements. The AFM, STM, and radiation measurements can be madesimultaneously during the surface scan using an activated tip 138 of theSPM probe 122-1.

[0170] Furthermore, as discussed earlier, the inspection data may beused to modify the object 102. In doing so, the controller 114 maycompare the generated inspection data with target data that it stores.The target data may include a target image and/or analysis of the objectwhich are compared with the generated image and/or analysis of theobject. The resulting modification data from this comparison indicateswhere and how the object needs to be modified in order to fall within apredefined tolerance level of the reference parameters. Then, based onthe modification data, the controller controls modification of theobject 102 using the probe 122-1 or one or more of the other SPM probesdescribed herein.

SPM Modifications with SPM Probe 122-1

[0171] The tip 138 of each SPM tool 137 of the SPM probe 122-1 has anobdurate coating 146, as mentioned earlier. As a result, an activatedtip of the probe can also be used to make SPM modifications of theobject 102 by making cuts in and/or deforming the material of theobject. The manner in which this is done is described in greater detailin the discussion regarding the fifth SPM probe 122-5.

Operation with Vacuum

[0172] As an additional feature, the accuracy of the calibrations,examinations, inspections, and modifications just described can beImproved by operating the probe 122-1 in a vacuum. Specifically, bydoing so, the AFM, STM, and radiation measurements and the SPMmodifications of the object that were described earlier will be moreaccurate.

[0173] Referring to FIG. 1, in order to operate the probe 122-1 in avacuum, the components of the SPM system 100 include a fluid system 344.Referring to FIG. 5, the fluid system includes a vacuum source 192 and acorresponding flexible tube 345 for each scanning head 120. The vacuumsource comprises a vacuum pump 193, a large vacuum chamber 194, and aconnector tube 195. The large vacuum chamber includes a valve 346 foreach flexible tube. The connector tube enables the vacuum pump and thevacuum chamber to be in fluid communication with each other. As aresult, the vacuum pump produces a vacuum in the large vacuum chamber.The large vacuum chamber is connected to each scanning head with acorresponding flexible tube. Each valve of the vacuum chamber can beindividually controlled by the controller 114.

[0174] Referring to FIG. 5, the large vacuum chamber 194 is connected tothe internal chamber 135 of the housing 154 of each scanning head 120with a corresponding flexible tube 345. This means that a vacuum is alsoproduced in the internal chamber when the corresponding valve 346 of thelarge vacuum chamber is opened by the controller 114. As shown in FIG.2, the probe 122-1 has an aperture 132 for each tool 137 of the probe.Thus, turning back to FIG. 5, the vacuum source is in fluidcommunication with the apertures of the probe so that a microvacuumchamber (i.e., zone or space) can be created in the gap (or spacing) 198between the probe 122-1 and the object 102 or calibration structure 128in the space around these apertures when making SPM measurements.Furthermore, since the base 130 of the probe is wedged into the seat 158as described earlier, a good vacuum seal is formed. Alternatively, theaperture may be directly connected to the vacuum chamber via one or moretubes.

[0175] To show that such a microvacuum chamber can be created underthese circumstances, it will be assumed that the apertures 132 in theprobe 122-1 approximate a single square aperture with 1 mm sides. Itwill also be assumed that base 130 of the probe approximates a circularplate with 10 mm diameter and has a lower surface 142 that is flat towithin ±1 μm (i.e., 1 μm rms surface roughness) and that the surface 166of the object is also flat to within ±1 μm. This will be assumed for agap 198 between the object and the base with a width between 20 nm and10 μm.

[0176] The gap 198 between the object and the base defines a duct whereambient gas may leak into the microvacuum chamber. The flowcharacteristics for this flow of gas are largely viscous with the givenexternal pressure assumed to be 1.1 Atmospheres. The Knudsen number forthe flow is given by K=(ησL)⁻¹, where L is the width of the gap. For 1.1Atmospheres, the particle density η3.0×10¹⁹ cm⁻³. The molecular momentumexchange cross section a can be gleaned from the known viscosity μ. Thisis done using μ=m<v>σ⁻¹, where m is the mass and v is the velocityacross the cross section, so that the cross section σ is on the order of7.5×10⁻¹⁵ cm². Thus the limiting width L is 0.04 μm, which is less thanthe rms roughness of the mating surfaces. Thus, K<1 until the gaspressure reduces to less than 0.04 Atmospheres and the rate-limitingstep is viscous transport.

[0177] Adding a zone of Knudsen flow to the calculations will not affectthe result obtained from the viscous calculation by a significantamount. Moreover, the viscous regime will increase to almost the entireleak path zone as the gap 198 is widened to several am. As we shall see,the gas leak rate is a function of the radial aspect ratio onlylogarithmically, so that the addition of a molecular flow zone is not alarge effect.

[0178] The problem geometry can be approximated by turning the outsidesquare geometry with sides of 10 mm into an equivalent circle withradius of 5 mm. The gas leak rate in the actual square geometry can bebounded by the gas leak rate for the circular geometry just describedand a circular geometry with the outer diameter set to the diagonallength of the square 5{square root}{square root over (2)} mm.

[0179] Therefore, the result for the gas leak rate for a constantviscosity μ independent of gas pressure (accurate to first order) isgiven by first solving for the flux Γ using the equation of continuity∇·Γ=0. This gives Γ=−∇φ, where ∇²φ=0 and the solution for the circulargeometry is φ=C₁ log r+C₂. Since the flow is viscous, we have thatΓ=−k∇p². In other words, the flow is proportional to the pressuregradient times the pressure (where isothermal flow conditions areassumed). The velocity profile in the duct is given by v_(r)(z)=V(r)(1−4Z²/L²), where Z is taken to extend form −L/2 to +L/2.Substituting into the momentum equation ∂p/∂r=μ∇²v_(r), we have thatV(r)=L²/(8μ)∂p/∂r. The appropriate boundary conditions givep(r)=p_(o)(log(r/a)log(b/a))^(0.5), where b is the outer radius and a isthe inner radius. Differentiating this to obtain the pressure gradient∂p/∂r at the outer edge, we have the complete expression for the gasleak rate:$Q = \frac{{\Pi \quad p^{2}} < L > < L^{2} >}{12\quad {kT}\quad {{\mu log}\left( {b/a} \right)}}$

[0180] where T is the temperature and k is Boltzman's constant. For theparameters given, b/a=10, μ=1.8×10⁻⁴ g cm s⁻¹, and <L> varies between 20nm and 10 μm. The value of <L²>, the rms channel width, also appears inthe formula. Here, it is most appropriate to use <L²>=δ²+L² _(rms),where L_(rms) is the rms surface roughness and δ is the nominal spacing.We see that the surface roughness dominates for small δ. For the curvesin FIGS. 16 and 17, which will be described shortly, the parameter <L>was taken as {square root}{square root over (<L²>)}.

[0181] Another question of interest is the outlet gas density in themicrovacuum chamber. This can be found by using the free-streamingformula Q=Aη<v>/4, where A is the area of the aperture. A calculation ofthe average velocity v_(r) at the atmospheric side was also done toverify that the flow is dominantly subsonic.

[0182] For the various widths L, the curve in FIG. 16 shows the outletgas density (expressed as an equivalent pressure in torr at 300 Kelvin).Similarly, the curve in FIG. 17 shows the gas leak rate in standard cm³per second.

[0183] Furthermore, the ion mean free path in the microvacuum chambercan be obtained from the outlet gas pressure. Using an estimate of 10⁻¹⁶cm² for a typical ion-neutral collision cross section, a 1.0-torrpressure (η=3.5×10¹⁶ cm⁻³) gives a mean free path of about 3 mm. Themean free path depends not only upon the gas pressure but upon theenergy and species of the ion. Thus, the above estimate is only a roughguide. Furthermore, since a large vacuum chamber 194 and a high capacityvacuum pump 193 are in fluid communication with internal chamber 135 ofthe housing 154 of the scanning head 120, the mean free path is actuallymuch larger.

[0184] The approximation of circular geometry can now be used to examinethe square geometry. The result for the square geometry will lie betweenthe results for the two limiting circular cases. For b/a=10, theseresults differ by log 10{square root}{square root over (2)}/log 10, orabout fifteen percent.

[0185] As a final note, the analysis above was made for a singleaperture that approximates the size of the apertures 132 of the probe122-1. Thus, in alternative embodiment, the probe could have just onesuch aperture rather than multiple apertures.

[0186] As those skilled in the art will recognize, the principlesdiscussed above can be more general thought of in terms of a microdifferential pressure chamber being formed in the gap 198. In otherwords, the microvacuum pressure chamber is simply a specific case wherethe differential pressure formed in the gap was due to a vacuum createdthere. Moreover, as will be discussed later, a differential pressurechamber may also be created in the gap by introducing a gas through theapertures 132 or other outlets in the probe.

Gap Sensing for Vacuum Operation

[0187] Referring back to FIG. 6, the width of the gap (or spacing) 198between the object 102 and the base 130 of the probe 122-1 must beproperly set (or adjusted) so that a microvacuum chamber can bemaintained in the gap around the area of the apertures 132 of the probe122-1. Thus, each scanning head 120 includes displacement transducers177 on the seat 158 of the holding plate 156 of the housing 154. Likethe engagement and adjustment transducers 172 and 173 discussed earlier,the displacement transducers may each comprise a material, such as apiezoelectric material or a resistive metal (e.g., Nickel Chromiumalloy), which change dimensions when a voltage or current signal isapplied to it.

[0188] In doing so, the components of the SPM system 100 further includea gap control circuit 176 that is coupled to the controller 114 and thedisplacement transducers 177. As a result, the controller 114selectively controls the gap control circuit to change the dimension ofthe displacement transducers so that the they selectively push down onthe upper surface 140 of the base and displace the base in varyingamounts at different points. Thus, the width of the gap 198 between thelower surface 142 of the base and the surface 166 of the object can befinely set in this manner.

[0189] Referring to FIG. 2, the probe 122-1 has a number of recesses 163in the base 130. Formed in these recesses are cantilevered gap sensors164. Each gap sensor comprises a corresponding cantilever 165 and acorresponding tip 167 on the cantilever. As shown in FIG. 18, thecantilever of each gap sensor is connected to the base so that it issuspended in the corresponding recess.

[0190] Still referring to FIG. 18, each gap sensor 164 also includes anelectrostatic (i.e., capacitive) tip actuator 162 for activating thecorresponding tip 167 for sensing the gap between the object 102 and thebase 130 of the probe 122-1. This tip actuator comprises a moveableplate electrode 139, an insulating plate 153 on an outcropping of thebase 130 that extends into the recess 163, and a stationary lower plateelectrode 168 on the insulating plate. The lower plate electrode istherefore connected to the base 130 and disposed below the cantilever.In this embodiment, the cantilever comprises a semiconductor material,such as silicon or silicon nitride, that is made conductive usingconventional techniques. As a result, the cantilever comprises themoveable plate electrode. Alternatively, the moveable plate electrodemay be formed on an insulating plate of the tip actuator which is formedon the cantilever so that the moveable plate electrode is connected tothe cantilever. In either case, the moveable plate electrode and thestationary lower plate electrode form a capacitor so that, when thecontroller 114 causes the gap control circuit 176 to apply a suitablevoltage between the moveable plate electrode and the lower plateelectrode, the cantilever is electrostatically (i.e., capacitively)deflected (i.e., bent) down toward the object 102. As a result, the tipis activated for sensing the gap between the object and the base.

[0191] Each gap sensor 164 further includes a electrostatic (i.e.,capacitive) deflection sensor 161 that comprises the moveable plateelectrode 139, an insulating plate 155 on the surface of the recess 163,and a stationary upper plate electrode 169 on the insulating plate. Thestationary upper plate electrode is disposed over the cantilever andconnected to the base. The moveable plate electrode and the stationaryupper plate electrode form a capacitor. Thus, when the corresponding tip167 is activated, the gap control circuit electrostatically (i.e.,capacitively) senses changes in voltage across the moveable plateelectrode and the upper plate electrode caused by the deflection of thecantilever. In response, it makes gap measurements of the width of thegap and provides them to the controller 114. The gap measurements arethen monitored by the controller 114.

[0192] In alternative embodiment shown in FIG. 19, the gap sensors 164could be electrostatic (i.e., capacitive) gap sensors when the object102 is conductive. In this case, each gap sensor includes an insulatingplate 178 on the base 130 of the SPM probe 122-1, a plate electrode 179on the insulating plate, and the object. The plate electrode and theobject form a capacitor. Thus, the change in voltage across the plateelectrode and the object can be electrostatically (i.e., capacitively)sensed by the gap control circuit. In response, the gap control circuit176 then generates a gap measurement signal that represents ameasurement of the width of the gap between the object and the plateelectrode.

[0193] Thus, in positioning the SPM probe 122-1 for making SPMmeasurements of the object 102, the controller 114 monitors the gapmeasurements made by the gap control circuit 176. Based on these gapmeasurements, the controller controls the positioning system 103 and gapcontrol circuit 176 so as to provide the proper gap 198 between theupper surface 166 of the object 102 and the lower surface 142 of theprobe. In this way, the entire gap can be set to have a uniform widthbetween the upper surface of the object and the lower surface of thebase so that the microvacuum chamber discussed earlier can be properlyestablished and maintained. The above process is also used inestablishing a gap between the lower surface of the probe and the uppersurface of a calibration structure when the probe is being calibrated.

[0194] Referring to FIG. 1, as alluded to earlier, the vacuum source 192of the SPM system includes a large vacuum chamber 194 for each flexibletube 345 connected to a scanning head 120. Thus, a vacuum can bemaintained in the large vacuum chamber regardless of whether thecorresponding valve of the large vacuum chamber is kept open or closed.And, since the volume of the internal chamber 135 of the housing 154 ofthe scanning head 120 is much smaller than the volume of the largevacuum chamber, the controller 114 can quickly establish a vacuum in theinternal chamber and the microvacuum chamber in the gap 198 between theobject 102 and the base 130 of the probe 122-1 by opening the valve.Similarly, the controller can end this vacuum by closing the valve.

Probe Loading and Unloading using Vacuum

[0195] Thus, referring to FIG. 5, not only can a vacuum between theobject and the base of the probe 122-1 be easily established and endedin the manner just described, but the probe 122-1 itself can be loadedonto and unloaded from a scanning head 120. Specifically, turning toFIGS. 1 and 6, during the loading process, the controller 114 lowers thescanning head onto the probe so that the probe is within the seat 158.Then, referring back to FIGS. 1 and 5, the controller causes thecorresponding valve 345 of the large vacuum chamber 194 to be opened sothat a vacuum is created in the internal chamber 135 of the housing 154of the scanning head. As a result, the probe will be locked onto theseat so that it is loaded onto the scanning head. Similarly, the probecan be unloaded by the controller by causing the valve to be closed andending the vacuum in the internal chamber. Thus, this method of loadingand unloading the probe onto and from the scanning head could be usedinstead of the rotary cam assembly 160 described earlier.

Structure of SPM Probe 122-2

[0196] Turning now to FIG. 20, there is shown another microstrucured SPMprobe 122-2 for use in inspecting the object 102 by making SPMmeasurements. It is constructed in the same manner as the first SPMprobe 122-1, except that it has different tips 238 than the tips 138 ofthe first probe. In particular, in order to be resistant to frictionalwear when being used to make AFM measurements, the tip 238 of each tool237 of the SPM probe 122-2 may include and be coated with an obdurateplate 146 at the sharp end of the tip, as shown in FIG. 21. The taperedcore material 144 of the tip may be shaped to have a flat portion at thesharp end of the tip on which the obdurate plate is formed. As with thefirst SPM probe 122-1, the obdurate plate may comprise diamond, diamondlike carbon, silicon carbide, carbon nitride, or some other obduratematerial and have a thickness in the range of approximately 1 Angstromsto 10 micrometers. The obdurate plate may be formed similar to theobdurate coating 146 described earlier for the first probe but with somemodifications.

[0197] Specifically, the SPM probe 122-1 is formed so that the targetsurface 150 of each tip 138 of the probe on which the obdurate plate 146is formed is oriented with respect to a particular crystal axis (ordirection) 152 of the core material 144 with a desired orientationangle. Then, the obdurate plate comprises a crystal that comprise theobdurate plate is grown on the target surface of each tip with thecrystal growth (or deposition) vector 154 being oriented with respect tothe crystal axis of the core material with a desired crystal growthangle. Moreover, during crystal growth of the obdurate plate, a desiredbias voltage can be applied to the core material to create an electricalfield. By positioning the target surface in the bias electric fieldand/or a bias magnetic field in different ways about the axis of thecrystal growth vector, different orientations (or alignments) of thegrown crystal on the target surface can be formed, as shown in FIGS. 22and 23. Thus, the orientation and crystal growth angles, the biasvoltage, and the position of the target surface about the axis of thecrystal growth vector, can be selected to produce a tip with an obdurateplate that has a desired crystal orientation on the target surface. And,it may be made conductive in the same way as was described earlier forthe obdurate coating 146 so that it can be used with the STM measurementcircuit 213 to make STM measurements.

[0198] For example, in the case where the core material 144 comprisessilicon, the target surface 150 of each tip 138 of the probe 122-2 maybe formed parallel to (or along) the [100] crystal axis of the siliconcore material. Then, diamond like carbon could be formed on the targetsurface as the obdurate plate itself or as a seed site for actualdiamond growth.

[0199] In the case where the diamond like carbon is used as a seed site,or where a seed site is formed by rubbing the tip in diamond asdescribed earlier, a diamond crystal may be grown at the seed site inthe manner described earlier for the diamond crystals of the obduratecoating 146. However, in this case, a hexagonal shaped diamond crystalis grown normal to the target surface to form the diamond plate when thecrystal growth vector is perpendicular to the target surface. Growth offlattened hexagonal diamond crystals is described in Keiji Hirabayashiet al., Synthesis and Growth of Flattened Diamond Crystals by ChemicalVapor Deposition, Diamond and Related Materials 5 (1996), pp.48-52. And,referring back to FIGS. 22 and 23, a suitable bias voltage can beapplied to the core material 144 to select the orientation of thediamond crystal on the target surface, as suggested earlier. It may thenbe doped with an impurity, such as boron, or grown with Boron in thegrowth plasma so that it is made conductive.

[0200] Similarly, the obdurate plate 146 may be formed with a siliconcarbide or carbon nitride crystal that has a desired crystal orientationon the target surface 150. In order to do so, the process describedearlier for growth of silicon carbide and carbon nitride crystals informing the obdurate coating 146 would be modified. This would be donein the same way that the earlier described process of growing diamondcrystals to form the obdurate coating was modified to grow the diamondcrystal that forms the obdurate plate 146.

[0201] The obdurate plate 146 was just described as being a singlecrystal grown on the target surface 150 of the core material 144.However, those skilled in the art will recognize that the obdurate platecould be formed by one or more crystals that are grown on the targetsurface. In this case, the application of the bias voltage to the corematerial would cause these crystals to be symmetrically aligned.

Probe Loading and Unloading, Tip Activation and Deactivation,Calibration, Inspection and Modification Operation, and Vacuum Operationof SPM Probe 122-2

[0202] Referring back to FIG. 20, unlike the first SPM probe 122-1, thesecond SPM probe 122-2 does not include a lens over each tip 238. Thus,the second probe is not used to make radiation measurements in the samemanner as the first probe. However, the second probe may be loaded ontoand unloaded from one of the scanning heads 120 in the same ways as weredescribed earlier for the first probe. In addition, the tip 238 of eachtool of the second probe may be activated and deactivated, calibrated,and have its profile examined in the ways described earlier for thefirst probe, except that the positioning of the tip of the second probewould not be calibrated using radiation measurements in the same manneras the first probe. And, the activated tip of each tool of the secondprobe would be used to make SPM measurements and SPM modifications inthe ways described earlier for the first probe, except that, as justmentioned, it would not be used to make radiations measurements in thesame manner as the first probe. Furthermore, optical images would beproduced by the imaging optics 226 in the manner discussed earlierduring operation and/or calibration of the second probe. Finally, duringoperation and/or calibration, a microvacuum chamber in the gap 198between the second probe and the object 102 or calibration structure 128may be established in any of the ways described earlier for the firstprobe using gap sensors 164 in the second probe.

Structure of SPM Probe 122-3

[0203] Turning now to FIG. 24, there is shown a third microstrucured SPMprobe 122-3 for use in making SPM measurements. It is constructed likethe first and second probes 122-1 and 122-2 except that it has differenttips 242 than the tips 138 and 238 of the first and second probes.

[0204] The tip 242 of each SPM tool 239 of the SPM probe 122-3 includesa tapered core material 144 and a multiwalled nanotube (i.e.,nanostructured tube) 244. The nanotube may comprise carbon or boronnitride and be formed in the manner described in S. lijima, “______”,Nature (London) 354, 56 (1991) and A. Loiseau et al., “Boron NitrideNanotubes with Reduced Number of Layers Synthezised by Arc Discharge”,Physical Review Letters, vol.76, no.25, (June 1996), pp.4737-4740, andNasreen G. Chopra et al., “Boron Nitride Nanotubes”, which are herebyexplicitly incorporated by reference. Moreover, in the manner describedin Honggjie Dai et al., “Nanotubes as Nanoprobes in Scanning ProbeMicroscopy”, Nature, vol. 334 (November 1996), pp.147-150, which is alsohereby explicitly incorporated by reference, the nanotube is attached tothe core material for use in making SPM measurements by bonding it tothe core material. And, as described in this reference, the narrowdiameter (e.g., 5-20 nanometers) of the nanotube enables it provide subnanometer resolution. And, its flexibility allows it to bend back intoits original shape and position in case of inadvertent crashes into theobject 102 or one of the calibration structures 128.

[0205] Turning to FIG. 25, the tip 242 of each SPM tool 239 includes oneor more crystals of an obdurate coating 246 on the nanotube 244. Sincethe ends of the nanotube 244 are closed when formed, as described in“Boron Nitride Nanotubes with Reduced Number of Layers Synthezised byArc Discharge” just referenced, a crystal of the obdurate material canbe formed on the closed surface 248 at the free (or unattached) end ofthe nanotube. Moreover, crystals of the obdurate material may also begrown at the free end on the side walls 250 of the nanotube. As with theprobes 122-1 and 122-2, the obdurate coating may comprise diamond,silicon carbide, carbon nitride, diamond like carbon, or some othersuitable obdurate material and may be formed in the ways describedearlier. Thus, as shown in FIG. 25, the obdurate coating could comprisea plate on the closed surface 248 and plates on the side walls 252 thatare formed with a desired crystal orientation in the manner describedearlier for the obdurate plate of each tip 238 of the second probe. And,these plates may be made conductive in the same way as was describedearlier for the obdurate coating 146 so that it can be used with the STMmeasurement circuit 123-11 to make STM measurements.

Probe Loading and Unloading, Tip Activation and Deactivation,Calibration, Inspection and Modification Operation, and Operation of SPMProbe 122-3

[0206] Furthermore, referring back to FIG. 24, the third probe may beloaded onto and unloaded from one of the scanning heads 120 in the sameways as were described earlier for the first and second probes.Moreover, the hollow nanotube 244 may be used to capture light at ornear a contact surface or guide light down it in the same manner as wasdescribed earlier for the SPM probe 122-1 to make radiationmeasurements. And, the tip of each tool of the third probe may beactivated, deactivated, calibrated, and have its profile examined in theways described earlier for the first probe, but without opticalcalibration of the position of each tip. Moreover, like the secondprobe, the activated tip of each tool of the third probe would be usedto make SPM measurements in the ways described earlier for the firstprobe, except that it would not be used to make radiation measurements.Furthermore, optical images would be produced by the imaging optics 226in the manner discussed earlier during operation and/or calibration ofthe third probe. And finally, during operation and/or calibration, amicrovacuum chamber in the gap 198 between the third probe and theobject 102 or calibration structure 128 may be established in any of theways described earlier for the first probe with the apertures 132 andthe gap sensors 164 of the third probe.

Structure of SPM Probe 1224

[0207] Turning to FIG. 26, there is shown a fourth microstructured SPMprobe 1224 for use in making SPM electrical measurements of the object102. It has a pair of SPM electrical tools 259 for making suchelectrical measurements between two points on the object. Each of thetools includes a cantilever 136 and a corresponding conductive tip 238on the cantilever like those discussed earlier for the first and secondSPM probes 122-1 and 122-2. The tip of each tool may also be constructedlike one of the tips 138 or 242 discussed earlier for the first andthird SPM probes 122-1 and 122-3. In this probe, the cantilever of eachtool is connected to a corresponding positioning system 263 for the toolinstead of being directly connected to the base 130 of the probe. Thebase 130 has the same basic shape and construction as the base discussedfor the first probe 122-1.

[0208] The positioning system 263 for each electrical tool 259 of theprobe 1224 can position the corresponding cantilever 136, and thereforethe corresponding tip 238, in the X and Y dimensions with respect to theobject 102 or one of the calibration structures 128. A fixed end of thecantilever is connected to a first moveable comb structure 268 of thepositioning system. The cantilever and the first moveable comb structureare moveably suspended by a first suspension system 267 over a secondmoveable comb structure 272 of the positioning system. The firstsuspension system comprises spring arms (or connectors) 266 which eachhave one end connected to the first moveable comb structure or thecantilever and another end connected to the second moveable combstructure. The fingers of the first moveable comb structure areinterdigitized with (i.e., aligned between) the fingers of acorresponding first stationary comb structure 270 of the positioningsystem that is stationary with respect to the first moveable combstructure. This stationary comb structure is formed on a firstinsulating plate 271 that is on the second moveable comb structure. Thefingers of this second moveable comb structure are interdigitized withthe fingers of a corresponding second stationary comb structure 274 ofthe positioning system that is formed on a second insulating plate 276on the base 130 of the probe. The second moveable comb structure ismoveably suspended by a second suspension system 279 over the base. Thesecond suspension system comprises spring arms 278 that each have oneend connected to the second moveable comb structure and another endconnected to the base.

[0209] The base 130, the moveable comb structures 268 and 270, and thespring arms 266 and 278 may be integrally formed together and comprise asemiconductor material, such as polysilicon, that is conductive.Similarly, the stationary comb structures may also comprise such asemiconductor material. And, the insulating plates 271 and 276 maycomprise an insulating material, such as silicon dioxide.

[0210] The two moveable comb structures 268 and 272 of the positioningsystem 263 of each electrical tool 259 of the probe 1224 arerespectively moveable in the X and Y dimensions to enable the tool to bepositioned in the X and Y dimensions. Specifically, each pair ofcorresponding moveable and stationary comb structures forms anelectrostatic (i.e., capacitive) comb drive of the type describedearlier for the nanoforce balance 128-3. Thus, by applying adifferential voltage across them, their comb fingers interactelectrostatically (i.e., capacitively) with each other and the moveablecomb structure moves linearly with respect to the stationary combstructure. Thus, since one end of the cantilever 260 of each tool isconnected to the moveable comb structure 268, the cantilever may bemoved so as to position the tip 262.

SPM Inspections with SPM Probe 122-4

[0211] The components of the SPM system 100 also include a measurementcontrol circuit 265. The controller 114 can control the measurementcontrol circuit to cause the positioning systems 263 of the electricaltools 259 of the probe 122-4 to position the tips 262 of the tools inthe manner described earlier so that they are positioned at differentscan points on the object 102 or calibration structure 128. Then, thecontroller can cause the measurement control circuit to make an SPMelectrical measurement between these two points by applying a suitablevoltage across the conductive tips 262. The measurement control circuitthen provides the controller with an electrical measurement signal thatrepresents the electrical measurement. These electrical measurements maythen be used by the controller to generate an electrical analysis forperforming a test, repair, and/or fabrication step of the object in themanner described earlier.

[0212] In fact, the SPM probe 1224 is particularly useful in testing,repairing, and/or performing fabrication steps on a semiconductor wafer.In particular, where an integrated circuit is being fabricated on thewafer, the SPM probe 122-4 may be used to analyze the electricalproperties of the circuit when performing a test, repair, or fabricationstep of the integrated circuit

Probe Loading and Unloading, Tip Activation and Deactivation,Calibration, and Operation of SPM Probe 122-4

[0213] The fourth SPM probe 122-4 may be loaded onto and unloaded fromone of the scanning heads 120 in the same ways as were described earlierfor the first SPM probe 122-1, except that it would be loaded from oneof the horizontal probe suppliers 125. The tip of each electrical tool259 of the fourth probe may be calibrated and have its profile examinedin the ways described earlier for the first probe, but without opticalcalibration of the positioning of each tip. Furthermore, optical imageswould be produced by the imaging optics 226 during operation and/orcalibration of the fourth probe in the manner discussed earlier for thefirst probe. And finally, like the first SPM probe 122-1, the fourthprobe has an aperture 132 and gap sensors 164 and may be operated and/orcalibrated in a microvacuum chamber in the gap 198 between the fourthprobe and the object 102 or calibration structure 128 in the same way aswas described for the first probe.

Structure of SPM probe 122-5

[0214] Referring now to FIG. 27, there is shown a fifth microstructuredSPM probe 122-5 for modifying the object 102 by making cuts in itsmaterial. It is constructed like the first to third SPM probes 122-1 to122-3 except for several differences. First, it has different tips 320than the tips 138,238, and 242 of the first to third probes. Second, itdoes not have a lens 147 and a lens support 149 over each tip. Third, ithas a particle removal structure 342 that is used to remove particlesfrom the object.

[0215] Referring to FIGS. 28 and 29, similar to each tip 238 of thesecond SPM probe 122-2, the tip 320 of each cutting tool 322 of the SPMprobe 122-5 includes and is coated with an obdurate plate 146 at thesharp end of the tip along a tapered side of the core material 144 ofthe tip. This makes the tip resistant to frictional wear when being usedto make cuts in the object 102. As with obdurate plate of each tip ofthe second probe, the obdurate plate of each tip of the fifth probe maycomprise diamond, diamond like carbon, silicon carbide, carbon nitride,boron nitride or some other obdurate material and have a thickness inthe range of approximately I Angstroms to 100 micrometers.

[0216] Furthermore, the tip 320 of each cutting tool 322 of the fifthSPM probe 122-5 is formed in a similar manner to that described earlierfor the tip 238 of each SPM tool 237 of the second SPM probe 122-2 butwith some modifications. Specifically, in constructing each cutting toolof the fifth probe, the target surface 150 for forming the obdurateplate 146 is formed so as to be oriented with respect to a particularcrystal axis (or direction) 152 of the core material 144 with a desiredorientation angle and with respect to the lower surface 151 of thecantilever with a desired cutting angle. Then, one or more crystals thatcomprise the obdurate plate are grown on the target surface of each tipin the manner discussed earlier for the second probe. Thus, by selectingthe orientation, cutting, and crystal growth angles, the bias voltage,and the position of the target surface about the axis of the crystalgrowth vector 154, a tip with an obdurate plate having a desired cuttingangle and a desired orientation of its crystal(s) can be produced. Then,the core material at each tip's sharp end may be etched away so thatdesired edges of the crystal(s) at the sharp end are exposed to form thecutting edges 149.

[0217] For example, in the case where the core material 144 is silicon,the target surface 150 of each tip 320 of the cutting probe 122-5 may beparallel to the [100] crystal axis of the silicon core material. Then,one or more crystals that comprise the obdurate plate are grown on thetarget surface of each tip with the crystal growth vector 154perpendicular to the crystal axis of the core material. During crystalgrowth of the obdurate plate, a desired bias voltage can be applied tothe core material to create an electrical field. By positioning thetarget surface in the electric field in different ways about the axis ofthe crystal growth vector, different crystal orientations of theobdurate plate can be formed on the target surface. In the case wheremultiple crystals are grown, they will all be symmetrically oriented onthe target surface, as shown in FIGS. 30 and 31.

[0218] Furthermore, as with the first to third SPM probes 122-1 to122-3, the fifth SPM probe 122-5 has multiple cutting tools 322. Thus,referring to FIGS. 28 and 29, the cutting tools may have tips 320 withdifferent cutting angles and different crystal orientations from eachother which are formed in the manner just discussed. As a result, thesecutting tools can be used for performing different types of cuts in theobject 102.

[0219] Alternatively, rather than forming an obdurate plate 146 on acore material 144 to form each cutting tool 322 of the cutting probe122-5 as just described, the core material 144 of each cutting tool mayin fact comprise diamond, silicon carbide, carbon nitride, boronnitride, or some other suitable obdurate material. Referring to FIG. 32,in order to do so, a mold 159 is used that comprises a semiconductormaterial, such as silicon. The obdurate material is then grown on themold with a thickness sufficient to produce the cantilever 136 and tip320 of the cutting tool. Then, the mold is etched away so as to leavethe cutting tool, as shown in FIG. 33. As shown in FIG. 34, a material161, such as polysilicon or tungsten, can be optionally deposited on topof the obdurate material to provide a reflective surface andmechanically strengthen the cantilever. Then, referring back to FIG. 27,the base 130 of the cutting probe is formed on and around each suchcutting tool to produce the entire fifth SPM probe 122-5.

[0220] In another example, each tip 320 may be tetrahedronally shaped inthe manner shown in FIGS. 82 and 83. Such a tip has three exposedsurfaces 800, 801, and 802. Two of these surfaces meet at right anglesat the base of the tip (i.e., where the tip is connected to thecantilever 136) to form a right angle corner 804 of the tip. For each ofthese two surfaces, the external angle 806 (i.e., external to the tip)formed between it and the lower surface 807 of the cantilever or the XYplane of motion of the cantilever is less than or equal to 90°.Conversely, the internal angle 808 (i.e., internal to the tip) formedbetween this surface and the lower surface of the cantilever and or theXY plane of motion is greater than or equal to 90°.

[0221] Here, each of the exposed surfaces 800 to 801 may be coated withan obdurate coating or plate 146 as described earlier for SPM probes122-1, 122-2, and 122-5 or the entire tip 320 or cutting tool 322 may beformed of an obdurate material 146 as just described. As a result, thesharp end 810 of each tip may be used to make cuts in the object 102 soas to form a ledge in the object or cut below specific material of theobject so as to remove other material below it but not remove thisspecific material.

[0222] Furthermore, as indicated earlier, the SPM probe 122-5 hasmultiple cutting tools 322. Thus, each tip 320 of the cutting tools 322may have a different orientation on its corresponding cantilever 136than any of the other tips. For example, as shown in FIG. 82, the SPMprobe may have four cutting tools. In this case, the right angle corner804 and sharp end 810 of each tip is rotated 90°, 180°, and 270° fromthe right angle corners and sharp ends of the other tips. As a result,these tips could be used to cut any material of the object 102 to leavea sharp corner at the ends of any cut series having common points.

[0223] Alternatively, the fine positioning system 104 of each scanninghead 120 may be configured to rotate the scanning head. Thus, thecontroller 114 could cause the fine position system to rotate thescanning head so that a single tip 320 of the SPM probe 122-5 could berotated so as to perform this same cut series without changing tips.Similarly, the rough positioning system 104 could be configured torotate. Thus, under the control of the controller the object could berotated by the rough positioning system so that a single tip 320 of theSPM probe 122-5 could perform this same cut series.

[0224] Those skilled in the art will recognize that this embodiment oftip 320 may be used to make AFM measurements in the manner describedearlier for SPM probe 122-1. In fact, this embodiment is particularlyuseful for making AFM measurements of material below a ledge or overhangof the object 102 after the tip was used to perform the cut that createdthe ledge or overhang. Furthermore, those skilled in the art willrecognize that similar shapes, such as pyramidal shapes, may be used forthis embodiment as well.

Probe Loading and Unloading, Tip Activation and Deactivation,Calibration, and Vacuum Operation of SPM Probe 122-5

[0225] Referring to FIG. 35, the fifth SPM probe 122-5 may be loadedonto and unloaded from one of the scanning heads 120 in the same ways aswere described earlier for the first SPM probe 122-1. In addition, thetip 320 of each cutting tool 322 of the fifth probe may be activated anddeactivated, calibrated, and have its profile examined in the waysdescribed earlier for the first probe, except that the positioning ofthe tip of the fifth probe would not be optically calibrated.Furthermore, optical images would be produced by the imaging optics 226during operation and/or calibration of the fifth probe in the mannerdiscussed earlier for the first probe. Finally, during operation and/orcalibration, a microvacuum chamber in the gap 198 between the fifthprobe and the object 102 or calibration structure 128 may be establishedin any of the ways described earlier for the first probe with theapertures 132 and the gap sensors 164 of the fifth probe.

SPM Modifications with SPM Probe 122-5

[0226] Referring again to FIG. 1, as mentioned earlier, the SPM probe122-5 may be used to modify the object 102. This is done by performing acut in the material of the object to remove material from the object.This is done when the user instructs the controller 114 with the userinterface 116 to use the cutting probe to perform this operation.Referring to FIG. 35, in the manner described earlier, the controllercontrols loading of the cutting probe onto the scanning head 120 and theactivation of the tip 320 of one of the cutting tools 322 of the probe.Then, the controller controls the positioning system 103 to lower theactivated tip onto the target area of the object such that the activatedtip pushes down on a target area of the object with sufficient force tomake a desired cut in the material of the object when the tip is draggedacross it. Then, the controller causes the positioning system to dragthe tip in this way and make the desired cut. The controller then causesthe positioning system to raise the tip from the cut or return it to thebeginning of cut stroke without lowering it into the material.

[0227] As mentioned earlier, the fifth SPM probe 122-5 may have multiplecutting tools 322 with tips 320 with different cutting angles andcrystal orientations. In this case, the controller 114 selects thecutting tool with the appropriate cutting angle and crystal orientationto perform the desired cut.

[0228] Moreover, the amount of force with which the activated tip 320 ofthe SPM probe 122-5 pushes down on the target area may be selected andselectively adjusted. Referring back to FIG. 35, the controller 114causes the tip activation circuit 175 to control the tip actuator 174 inorder to do this. Specifically, the tip activation circuit causes achange in the dimension of the adjustment transducer 173 so that itpushes or pulls against the end of the lever arm 170 to which it isfixed. In response, the lever arm is moved over the pivot 171 so thatthe pivot point of the lever arm (about which the lever arm pivots onthe pivot) will change. This changes the point at which the rounded endof the lever arm contacts the cantilever 136 on which is located theactivated tip. Since this contact point is also a pivot point for thedeflection of the cantilever, the amount of force imparted on the targetarea depends on the location of this contact point. In this way, theamount of force imparted by the activated tip can be selected andselectively adjusted.

[0229] Moreover, the activated tip 320 the fifth SPM probe 122-5 can becalibrated using the force balance 128-3 in the manner described earlierfor the first SPM probe 122-1. Thus, by using the force calibrationtable created for the tip during this calibration, a precise known forcecan be applied to the object 102 by the tip. As a result, a precise cutin the material of the object can be made to remove material from theobject.

[0230] As was alluded to earlier, the first and second SPM probes 122-1and 122-2 may also be used to make modifications to the material of theobject 102. In particular, the first and second probes would be used tomake cuts in and/or deform the material of the object. The cuts would bedone in the same manner as was just described with a precise forceapplied to the material of the object while dragging the activated tips136 and 238 of the first and second probes across the material of theobject. Deformations would be similarly done by lowering the tips of thefirst and second probes onto, but not dragging across, the material ofthe object.

[0231] This is particularly useful in repairing and/or performingfabrication steps on a semiconductor wafer or fabrication mask. Inparticular, when excess material is on the wafer or mask, the SPM probes122-1, 122-2, and 122-5 may be used to perform a precise cut to removeor etch away this material.

[0232] Moreover, this is also useful in performing precision repairsand/or fabrication steps of a magnetic microstructure. Specifically, agap between magnetic elements of the magnetic microstructure can beprecisely created and/or repaired by using the SPM probes 122-1, 122-2,and 122-5 to perform a precise cut in the magnetic material between themagnetic elements. This is particularly applicable to creating orrepairing the gap between the write and read poles of the thin filmmagnetic material of a thin film magnetic read/write head.

Inspections with SPM Probe 122-5

[0233] Referring again to FIG. 27, the SPM probe 122-5 could also beused to inspect the object 102 by making SPM measurements of the object.This particularly true for the case when each cutting tool 322 of theprobe is of the embodiment shown in FIGS. 32 to 34. As a result, AFMmeasurements could be made from the deflection of the cantilever 136 asthe tip 320 is scanned over the surface 166 of the object in the mannerdiscussed earlier for the first to third SPM probes 122-1 to 122-3.Furthermore, the obdurate material 146 could be made conductive in themanner discussed earlier for the first to third probes to make the tipof the fifth probe conductive. As a result, STM measurements could bemade using this conductive tip in the manner discussed earlier for thefirst to third probes.

Particle Removal Structure

[0234] As mentioned earlier, the fifth SPM probe 122-5 includes aparticle removal structure 342, as shown in FIGS. 27 and 35. As will bedescribed shortly, the particle removal structure is used to removeparticles from the object 102 or calibration structure 128 duringoperation and/or calibration of the probe. These particles may becontaminant particles from external sources or debris particles ofparticulate material removed from the object when cuts are made in theobject with the tips 320 of the probe.

[0235] Referring to FIG. 1, in order to remove such particles, the fluidsystem 344 is used. As shown in FIG. 35, a flexible tube 346 for eachscanning head is connected to a corresponding connector tube 347 of thescanning head.

[0236] The particle removal structure 342 includes an inlet (i.e., inputport) 337 on the upper surface 140 of the fifth SPM probe 122-5, a duct340 formed in the base 130 of the probe, and an outer annular outlet(i.e., output port) 336 on the lower surface 142 of the probe, as shownin FIG. 35. The duct connects the inlet and the outer annular outlet sothat they are in fluid communication with each other. As shown in FIG.86, the surface 142 of the base of the SPM probe 122-5 has steps 830 init.

[0237] Referring now to FIGS. 1, 27, and 35, a corresponding connectortube 347 is connected to the inlet 337. Thus, when the controller 114controls the corresponding valve 346 of the fluid system 344 to open, agas source of the fluid system is in fluid communication with the inletto provide it with a high pressure low viscosity gas, such as air,argon, helium, or other suitable gas. The gas travels through the duct340 and exits at the outer annular outlet 336.

[0238] Similarly, as shown in FIG. 35, the particle removal structure342 includes an inlet 330 on the upper surface 140 of the fifth SPMprobe 122-5, a duct 341 formed in the base 130 of the probe, and aninner annular outlet 335 on the lower surface 142 of the probe. The ductconnects the inlet and the annular inner outlet so that they are influid communication with each other.

[0239] Turning now to FIGS. 1, 27,35, and 86 a corresponding connectortube 347 is connected to the inlet 330. Thus, when the controller 114controls the corresponding valve 346 of the fluid system 344 to open, agas source of the fluid system is in fluid communication with the inletto provide it with a low pressure high viscosity gas, such as carbondioxide. The gas travels through the duct 341 and exits at the innerannular outlet 335.

[0240] The inner annular outlet 335 is at a step 832 lower than the step830 at which the aperture opens out at. The low viscosity gas serves asseal to prevent the high viscosity gas discussed from entering themicrovacuum chamber created in the gap between the step 831 and thesurface 166 of the object 102. This microvacuum chamber is created inthe manner discussed earlier for SPM probe 122-1. Moreover, adifferential pressure chamber is created in the gap between the step 830and the surface of the object. This is created in the same way as themicrovacuum chamber just mentioned except that the high viscosity gas isintroduced rather than a vacuum.

[0241] Additionally, the particle removal structure 342 includes anoutlet 331 on the upper surface 140 of the fifth SPM probe 122-5, a duct339 formed in the base 130 of the probe, and a middle annular inlet 337on the lower surface 142 of the probe, as shown in FIG. 35. The ductconnects the outlet and the annular middle inlet so that they are influid communication with each other.

[0242] Referring again to FIGS. 1, 27, and 35, the outlet 331 of theparticle removal structure 342 is connected to a corresponding connectortube 347. When the controller 114 controls the corresponding valve 346of the fluid system 344 to open, a low pressure gas sink of the fluidsystem is in fluid communication with this outlet to draw the lowpressure high viscosity and high pressure low viscosity gases in throughthe middle annular inlet 332 and the duct 339.

[0243] Specifically, the low pressure gas sink causes a high rate flowof the high pressure low viscosity gas from the outer annular outlet tothe annular middle inlet. As a result, particles are swept up andremoved from the upper surface 166 of the object 102 or calibrationstructure 128 by this high rate flow. Moreover, in order to increase theflow of the high viscosity gas, the step 832 is provided and is lowerthan the steps 831 and 830. This makes the gap 198 wider in this area sothat the high viscosity gas can flow easier. An additional step couldhave been used for the middle annular inlet 337 to further increase theflow.

[0244] Furthermore, the low pressure gas sink causes a low rate of flowof the low pressure high viscosity gas from the inner annular outlet 335to the middle annular inlet. As indicated earlier, this low rate flowacts as a buffer for the microvacuum chamber created in the gap 198 andprevents the high pressure low viscosity gas and the particles that itcarries to enter this microvacuum chamber. Moreover, since the innerannular outlet is at a step 831 higher than the middle annular inlet337, the flow of the high viscosity gas into the middle annular inlet isincreased. And finally, the inner annular outlet 335 can serve as a gasbearing structure which operates like that of the gas bearing structure402 discussed later.

[0245] In this way, the controller 114 can control the removal ofparticles from the upper surface 166 of the object 102 or calibrationstructure 128. This is done by selectively causing the valves 346 of thefluid system 344 to be opened during operation and/or calibration of thefifth SPM probe 122-5.

[0246] The particle removal structure 342 just described is particularlyuseful for performing repairs and/or fabrication steps on semiconductorwafers and fabrication masks and thin film magnetic microstructure. Inthis way, any particles that can potentially damage or effect theperformance of the wafer, mask, or magnetic microstructure can be easilyremoved from its surface during a repair and/or fabrication step.

[0247] Finally, the particle removal structure 342 is particularlyuseful for performing repairs and/or fabrication steps in which materialis removed from an object 102 when cuts are made with the fifth SPMprobe 122-5. However, it can also be used when the fifth probe is simplyused to make SPM measurements in the manner described earlier. Thus,those skilled in the art will recognize that the first to fourth SPMprobes 122-1 to 122-4 described earlier may also be constructed withsuch a particle removal structure for removal of particles while makingSPM measurements and/or SPM modifications.

Particle Removal with Sweeping Motion of SPM Probe 122-5

[0248] In addition, the SPM probe 122-5 may be used to sweep or collectdebris particles resulting from a modification made with the probe to anarea of the object 102 where they have no deleterious effect. Namely,they are swept to an area of the object where they do not obstructinspection of the modification just made or further modification of theobject in the area where the original modification was just made or inanother area. Moreover, the collected debris particles may then beremoved by a separate process, such as etching, or fixed in place by anadhesive or thermal fixing.

[0249] More specifically, after a modification is made with the SPMprobe 122-5, the controller 114 controls the positioning system 103 sothat sweeping motions of the SPM probe are made over the object 102. Indoing so, the controller first controls the positioning system toposition the tip 320 of the probe in the Z dimension so that it is justabove or just contacts the surface 166 of the object while the sweepingmotions are made. Then, the controller controls the positioning systemso that the sweeping motions are made to remove the debris particlesfrom the area where the modification was made. These motions includemotions which follow a complex surface previously scanned or a surfacecalculated to be the result of the previous material removal activity.As discussed later, these sweeping motions can be made in 2-D (twodimensional) or 3-D (three dimensional).

[0250] The debris particles may be swept to an area where they will notobstruct further modifications to the object or inspection of themodification just made. These other modifications may be to themodification just made or in another area of the object. Moreover, theymay be made using any of the SPM probes 122-1 to 122-18 in the mannerdiscussed herein. Additionally, the inspections may be made with theother components 123 of the SPM system 100 separately or in conjunctionwith any of the SPM probes 122-1 to 122-18 also in the manner describedherein.

[0251] The collected debris particles may be fixed to the object in anarea where they will not affect the performance of the object as it isto be normally used. For example, the object 102 may be a semiconductormanufacturing mask. In this case, the SPM probe 122-5 may be used toperform a cut in some of the material of the mask, such as chrome. Theresulting debris particles could then be swept to an area of the maskwhere the material can be fixed to the mask and not effect itsperformance when it is used in its normal environment. This may be donein several ways. For example, the other components 123 of the SPM systemmay include an adhesive mist source which sprays an adhesive mist ontothe mask under the direction of the controller 114. The collected debrisparticles would then be adhesively fixed together on the mask.Alternatively, the other components of the SPM system may include alaser source that would under the control of the controller provide alaser to heat the collected debris particles. These debris particleswould then be fused together on the mask. This may also be done byheating the debris particles with the SPM probe 122-1 8 described later.

[0252] Furthermore, the debris particles may be removed from the object102. In this case, the resulting debris particles would also be swept toan area of the mask where the material will not effect its performancewhen it is used in its normal environment. Then, the debris particlesmay be removed from this area. For example, in the case of asemiconductor manufacturing mask, the other components 123 of the SPMsystem 100 may include an acid bath station. The controller 114 wouldthen control the object loader 115 described earlier to place the maskin the acid bath provided by the acid bath station. The concentration ofthe acid bath would be selected so that the acid bath dissolves thesmall debris particles but does not appreciably dissolve away the largermaterials of the object. For example, the debris particles may beremoved from chrome material on the mask. The acid bath would dissolvethe small chrome debris particles away but would not appreciablydissolve the main chrome material of the mask.

[0253] As those skilled in the art will recognize, this sweepingtechnique may be used for any of the SPM probes 122-1 to 122-18described herein.

Structure of SPM Probe 122-6

[0254] Referring now to FIGS. 36 and 37, there is shown a sixthmicrostructured SPM probe 122-6 for modifying the object 102 by makingcuts in its material. The sixth probe includes several cutting tools350. As with the fifth SPM probe 122-5, each cutting tool has acorresponding cantilever 136 and a corresponding tip 322 on one end ofthe cantilever. Alternatively, the tip may be one of the tips 138 and238 of the first and second SPM probes 122-1 and 122-2. Furthermore, thebase 130 and the particle removal structure 342 of the sixth probe arerespectively constructed in the same manner as was described for thefirst and fifth probes.

[0255] However, the cantilever 136 of each cutting tool 350 is connectedto a corresponding positioning system 352 for the tool instead of beingdirectly connected to the base 130 of the probe. The positioning systemfor each cutting tool can position the corresponding cantilever, andtherefore the corresponding tip 320, in one dimension with respect tothe object 102 or one of the calibration structures 128. A fixed end ofthe cantilever is connected to a moveable comb structure 354 of thepositioning system. The cantilever and the moveable comb structure aremoveably suspended by a suspension system 356 under a stationary upperplate electrode 370. The suspension system comprises spring arms (orconnectors) 360 that each have one end connected to the base 130. Theother end of one of the spring arms is connected to the moveable combstructure or the fixed end of the cantilever and the other end of theother spring arm is connected to the free end of the cantilever. Thefingers of the moveable comb structure are interdigitized with (i.e.,aligned between) the fingers of a corresponding stationary combstructure 355. This stationary comb structure is formed on an insulatingplate 371 and is therefore connected to the base via the insulatingplate.

[0256] The moveable comb structure 354 of the positioning system 352 ofeach cutting tool 350 of the probe 122-6 is moveable in one dimension toenable the tool to be positioned in that dimension. The components ofthe SPM system 100 include a cutting control circuit 351 to do this.Specifically, the pair of corresponding moveable and stationary combstructures 354 and 355 of the cutting tool forms an electrostatic (i.e.,capacitive) comb drive of the type described earlier for the nanoforcebalance 128-3. Thus, when the cutting control circuit applies adifferential voltage across the moveable and stationary comb structures,their comb fingers interact electrostatically (i.e., capacitively) witheach other and the moveable comb structure moves linearly with respectto the stationary comb structure. Since one end of the cantilever 136 ofeach tool is connected to the moveable comb structure, the cantilevermay be moved so as to position the tip 320.

[0257] Furthermore, each cutting tool 350 of the sixth SPM probe 122-6has a tip deactuator 366 for removing the tip 320 from the object aftera cut is made with the cutting tool. The tip deactuator includes aninsulating plate 368 on a support platform 362 of the base 130, theupper plate electrode 370 on the insulating plate, and a moveable plateelectrode 367. The support platform is suspended in a correspondingaperture 132 by corresponding bridges 364 of the base. In thisembodiment, the cantilever comprises a conductive material, such aspolysilicon which is made to be conductive, so that the cantileveractually comprises the moveable plate electrode. Alternatively, the tipdeactuator may include an insulating plate formed on the cantilever withthe moveable plate electrode being formed on the insulating plate. Ineither case, the moveable plate electrode and the upper plate electrodeform a capacitor. Thus, when the cutting control circuit 351 applies anappropriate voltage is applied between the moveable plate electrode andthe upper electrode plate, the cantilever can be electrostatically(i.e., capacitively) pulled toward the electrode plate.

[0258] The base 130, the moveable comb structure 354, the cantilever 136and the spring arms 360 of each cutting tool 350 may be integrallyformed together and comprise a semiconductor material, such aspolysilicon, that is conductive. In this way, the moveable combstructure and the cantilever (i.e., the moveable plate electrode 367)may be electrically connected together for convenience. Similarly, thestationary comb structure 355 may also comprise such a semiconductormaterial. The plate electrodes may comprise a conductive material, suchas polysilicon or tungsten. And, the insulating plates 371 and 368 maycomprise an insulating material, such as silicon dioxide.

Probe Loading and Unloading, Tip Activation and Deactivation,Calibration, Vacuum Operation, and Particle Removal Operation of SPMProbe 122-6

[0259] The sixth SPM probe 122-6 may be loaded onto and unloaded fromone of the scanning heads 120 in the same ways as were described earlierfor the first probe. In addition, the tip 320 of each cutting tool 322of the sixth probe may have its position calibrated and its profileexamined in the ways described earlier for the first probe, except thatthe positioning of the tip of the sixth probe would not be opticallycalibrated. Furthermore, optical images would be produced duringoperation and/or calibration of the sixth probe by the imaging optics226 in the manner discussed earlier for the first probe. Duringoperation and/or calibration, a microvacuum chamber in the gap 198between the sixth probe and the object 102 or calibration structure 128may be established in any of the ways described earlier for the firstprobe with the apertures 132 and the gap sensors 164 of the sixth probe.Finally, particles can be removed during operation and/or calibrationusing the particle removal structure 342 of the sixth probe in themanner described earlier for the fifth SPM probe 122-5.

SPM Modifications with SPM Probe 122-6

[0260] Referring again to FIG. 1, the SPM probe 122-6 may be used tomodify the object 102 by making a cut in the object to remove materialfrom the object. This is done when the user instructs the controller 114with the user interface 116 to use the probe to perform this operation.The controller controls loading of the probe onto the scanning head 120.Then, the controller controls the positioning system 103 to lower theactivated tip onto the target area of the object such that the activatedtip pushes down on the target area with sufficient force to make adesired cut in the material of the object when the tip is dragged acrossit. Then, referring to FIG. 36, the controller controls the cuttingcontrol circuit 351 to cause the positioning system 352 of the cuttingtool to move the tip in the manner described earlier so that it isdragged across the object to make the desired cut The controller thencontrols the cutting control circuit to cause the tip deactuator 366 ofthe cutting tool to raise the tip from the cut in the manner describedearlier.

[0261] Moreover, the activated tip 320 of the SPM probe 1226 may becalibrated for the amount of force with which it pushes down on theobject 102 in performing a cut using the force balance 128-3 in themanner described earlier for the first SPM probe 122-1. Thus, by usingthe force calibration table created for the tip during this calibration,a precise known force can be applied to the object 102 by the tip. As aresult, a precise cut in the material of the object can be made toremove material from the object.

[0262] As with the fifth SPM probe 122-5, the sixth SPM probe 122-6 mayhave multiple cutting tools 350 with tips 320 with different cuttingangles and crystal orientations. In this case, the controller 114selects the cutting tool with the appropriate cutting angle and crystalorientation to perform the desired cut. And, like the fifth SPM probe122-5, the sixth SPM probe 122-6 is particularly useful in repairingand/or performing fabrication steps on a semiconductor wafer orfabrication mask or a magnetic microstructure.

Structure of SPM Probe 122-7

[0263] Referring now to FIGS. 38 and 39, there is shown a seventhmicrostructured SPM probe 122-7 for modifying the object 102 by millingthe material of the object. The seventh probe includes a rotary millingtool 372. The milling tool has a tip 320 like that of each of thecutting tools 350 of the fifth SPM probe 122-5. Alternatively, the tipmay be one of the tips 138 and 238 of the first and second SPM probes122-1 and 122-2. Furthermore, the base 130 and the particle removalstructure 342 of the seventh probe are respectively constructed in thesame manner as was described for the first and fifth probes.

[0264] However, unlike the cutting tools 350 of the fifth SPM probe122-5, the milling tool 372 has a milling platform 374. The tip 320 ofthe milling tool is centrally located on the milling platform. Themilling platform is connected to a rotary movement system 376 of themilling tool.

[0265] The milling platform 376 has support arms 377 that extend inopposing directions (e.g., +Y and −Y) In the same dimension (e.g., Y).The rotary movement system 376 comprises two moveable comb structures378 connected to each support arm of the milling platform. The millingplatform and the moveable comb structures are moveably suspended by asuspension system 380 over a stationary upper plate electrode 370 on thebase 130. The suspension system comprises spring arms (or connectors)379 which each have one end connected to the milling platform andanother end connected to the base 130.

[0266] Each of the moveable comb structures 378 has a set of curvedfingers that extend out from the corresponding support arm 377 in twodirections (e.g., +X or −X and −Y or +Y). For each moveable combstructure, the rotary movement system 376 has a corresponding stationarycomb structure 381 with curved fingers that extend in the oppositedirections (e.g., −X or +X and +Y or −Y). Each set of curved fingers ofeach moveable comb structure is interdigitized with (i.e., alignedbetween) the curved fingers of the corresponding stationary combstructure. The stationary comb structures are formed on insulatingplates 386 and are therefore connected to the base via the insulatingplates.

[0267] Each of the moveable comb structures 378 of the rotary movementsystem 376 is moveable in an arc to enable the milling platform 376 tobe rotated. Specifically, each stationary comb structure 381 and thecorresponding moveable comb structure 378 forms an electrostatic (i.e.,capacitive) comb drive of the type described earlier for the nanoforcebalance 128-3. Thus, by applying a differential voltage across this pairof corresponding moveable and stationary comb structures, their combfingers interact electrostatically (i.e., capacitively) with each otherand the moveable comb structure moves in one direction (e.g., clockwiseor counter clockwise) in an arc with respect to the stationary combstructure.

[0268] Since the moveable comb structures 378 are connected to thesupport arms 377 of the milling platform 372, the milling platform maybe rotated in this manner to perform milling operations with the tip 320of the milling tool. In order to do so, the components of the SPM system100 further include a milling control circuit 377. The controller 114causes the milling control circuit to alternatingly apply voltages tothe pairs of corresponding moveable and stationary comb structures thatcause the milling platform to rotate in the counter clockwise directionand voltages to the pairs of corresponding moveable and stationary combstructures that cause the milling platform to rotate in the clockwisedirection. As a result, the milling platform oscillatingly rotates backand forth in the clockwise and counter clockwise directions.

[0269] In an alternative embodiment, the milling tool 372 could includemore than two moveable comb structures 378. In this case, the moveablecomb structures would be disposed equidistant from one another aroundthe milling platform 376.

[0270] Furthermore, the milling tool 372 has a tip deactuator 366 forremoving the tip 320 from the object after a milling operation isperformed. The tip deatuator is constructed and operates like the onedescribed earlier for the each cutting tool 350 of the sixth SPM probe122-6, except that the milling platform 376 comprises the moveable plateelectrode 367. In an alternative embodiment, the tip deactuator mayinclude an insulating plate formed on the milling platform with themoveable plate electrode being formed on the insulating plate.

[0271] The base 130, the milling platform 372, the moveable combstructures 378, and the spring arms 379 may be integrally formedtogether and comprise a semiconductor material, such as polysilicon,that is conductive. In this way, the moveable comb structures and themilling platform (i.e., the moveable plate electrode 367) may all beelectrically connected together for convenience. Furthermore, thestationary comb structures 384 may also comprise such a semiconductormaterial. The upper plate electrode 370 may comprise a conductivematerial, such as polysilicon or tungsten. And, the insulating plates368 and 386 may comprise an insulating material, such as silicondioxide.

Probe Loading and Unloading, Calibration, Vacuum Operation, and ParticleRemoval Operation of SPM Probe 122-7

[0272] The seventh SPM probe 122-7 may be loaded onto and unloaded fromone of the scanning heads 120 in the same ways as were described earlierfor the first probe. In addition, the tip 320 of the milling tool of theseventh probe may have its position calibrated and its profile examinedin the ways described earlier for the first probe, except that thepositioning of the tip of the seventh probe would not be opticallycalibrated. Furthermore, optical images would be produced by the imagingoptics 226 during operation and/or calibration of the seventh probe inthe manner discussed earlier for the first probe. During operationand/or calibration, a microvacuum chamber in the gap 198 between theseventh probe and the object 102 or calibration structure 128 may beestablished in any of the ways described earlier for the first probewith the aperture 132 and the gap sensors 164 of the seventh probe.Finally, particles can be removed during operation and/or calibrationusing the particle removal structure 342 of the seventh probe in themanner described earlier for the fifth SPM probe 122-5.

SPM Modifications with SPM Probe 122-7

[0273] Referring again to FIG. 1, the seventh SPM probe 122-7 may beused to modify the object 102 by performing milling operations on theobject to remove material from the object. This is done when the userinstructs the controller 114 with the user interface 116 to use theprobe to perform this operation. The controller controls loading of theprobe onto the scanning head 120. Then, the controller controls thepositioning system 103 to lower the activated tip onto the target areaof the object such that the activated tip pushes down on the target areawith sufficient force to perform the desired milling operation in thematerial of the object when the tip is rotated back and forth. Then,referring to FIG. 38, the controller controls the milling controlcircuit 377 to cause the rotary movement system 376 of the milling probeto oscillatingly rotate the milling platform back and forth (i.e.,clockwise and counter clockwise) in the manner described earlier so thatthe tip is rotated back and forth and performs the desired millingoperation. The controller then controls the milling control circuit tocause the tip deactuator 366 of the milling tool to raise the tip fromthe milled material of the object in the manner described earlier.

[0274] Moreover, the activated tip 320 of the SPM probe 122-6 may becalibrated for the amount of force with which it pushes down on theobject 102 in performing a cut using the force balance 128-3 in themanner described earlier for the first SPM probe 122-1. Thus, by usingthe force calibration table created for the tip during this calibration,a precise known force can be applied to the object 102 by the tip. As aresult, a precise cut in the material of the object can be made toremove material from the object.

Structure of SPM Probe 122-8

[0275] Turning now to FIG. 40, there is shown an eight SPM probe 122-8for use in making SPM measurements of the object 102 and/or SPMmodifications of the object 102. In this case, the SPM measurements andthe SPM modifications are made in response to radiation in the form ofcharged particles that are produced by the probe and directed at theobject.

[0276] More specifically, the eighth SPM probe 122-8 has an e-beam tool382 for generating an e-beam used in making the SPM measurements and theSPM modifications. The tool is suspended in the aperture 132 of the base130 of the probe within the inner perimeter surface 134 so that the toolis between the lower and upper surfaces 142 and 140 of the base toprevent it from being damaged. Otherwise, the base has the same basicshape and construction as the base discussed for the first probe 122-1.

[0277] Referring to FIG. 41, the e-beam tool 382 includes a supportplatform 386 that is suspended in the aperture by the bridges 384 of thetool. The bridges connect the support platform to the inner perimetersurface 134 of the base 130 of the SPM probe 122-8. The support platformand the bridges may be separately formed or may be an integral portionof the base. A tip 388 is formed on the support platform and isconstructed so as to emit an e-beam.

[0278] For example, the tip 388 may be made to be a field emissivelyconductive so that it can emit an e-beam. Thus, it may have a fieldemissive conductive coating 390 formed over the tip's core material 144.This coating may comprise conductive diamond, silicon carbide, carbonnitride, diamond like carbon, or other suitable conductive material andmay be formed in the ways described earlier for the probes 122-1 to122-3. In the case of diamond, this may be formed in the mannerdescribed in “Growth of Diamond Particles on Sharpened Silicon Tips forField Emission”, “Growth of Diamond Particles on Sharpened SiliconTips”, “Mold Growth of Polycrystalline Pyramidal-Shape Diamond for FieldEmitters” referenced earlier. Thus, an e-beam is produced when an e-beamcontrol circuit 383 applies a suitable voltage across the field emissivecoating 390 and the accelerating electrode 392 of the e-beam tool 382.The e-beam control circuit is one of the other components of the SPMsystem 100.

[0279] The particle beam tool 382 also includes an acceleratingelectrode 392, a steering electrode assembly 394, and a collectionelectrode 396 that are all formed on insulating support structures 398of the tool. The insulating support structures support the acceleratingelectrode, the steering electrodes 395 of the steering electrodeassembly, and the collection electrode so that the acceleratingelectrode is disposed below the field emissive coating 390 of the tip388, the steering electrodes are disposed below the acceleratingelectrode, and the collection electrode is disposed below the steeringelectrodes. The accelerating, steering, and collection electrodes maycomprise a conductive material, such as polysilicon or tungsten, whilethe insulating support structures comprise an insulating material, suchas silicon dioxide.

[0280] Turning back to FIG. 40, the steering electrodes 395 areelectrically isolated from one another. In this way, the abeam can besteered (i.e., focused or directed) in selected directions by causingthe e-beam control circuit 383 to selectively apply separate voltages tothese steering electrodes. As those skilled in the art will recognize, asingle steering electrode could also be used to steer the e-beam.

[0281] Furthermore, referring back to FIG. 41, there are apertures 400in the accelerating, steering, and collection electrodes 392, 395, and396 through which the e-beam passes to allow the e-beam to strike theobject 102. In response, secondary electrons are reflected and/oremitted by the object and strike the collection electrode so as to becollected by the collection electrode.

[0282] Turning again to FIG. 40, the SPM probe 122-8 may also includesteering magnets 385 that each comprise a coil around a magneticmaterial. The steering magnets are fixed to the lower surface 142 of thebase 130 of the probe and are spaced equally apart. As a result, thee-beam can be further steered by selectively applying separate currentsto the steering magnets to selectively recurve or bend the e-beam.

SPM Inspections with SPM Probe 122-8

[0283] As mentioned earlier, the SPM probe 122-8 can be used to makeradiation measurements in order to inspect the object 102. Referring toFIG. 42, in doing so, the controller 114 controls the loading andunloading of the probe from a scanning head 120 in the same way as wasdiscussed for the first probe 122-1. However, the components of the SPMsystem 100 in this embodiment may also include a steering coil 387 fixedto the probe holder 156 of the scanning head. The steering coil is alsoused to selectively steer the e-beam by providing it with a selectedcurrent to cause the e-beam to have a spiral trajectory with a radiusthat is a function of the current.

[0284] Then, the controller 114 controls the positioning system 103 toposition the probe 122-8 for a scan of the object 102. Referring back toFIGS. 40 to 42, at each scan point, the controller causes the e-beamcontrol circuit 383 to produce an e-beam in the manner discussedearlier. At the same time, it causes the e-beam control circuit to applysuitable voltages and currents to the steering electrodes 394, thesteering magnets 385, and the steering coil 387 to selectively steer thee-beam at the object 102. In this way, the e-beam can be steered atareas of the object 102, such as the sides and undersides of the object,that are difficult to reach. Then, when the e-beam interacts with theobject 102, it causes secondary electrons to be reflected and/or emittedback to the collection electrode 396. This causes a current in thecollection electrode which represents the electrons that contact thecollection electrode. This current is measured by the e-beam controlcircuit as a radiation measurement of the electrons collected by thecollection electrode. The radiation measurements made at all of the scanpoints may be collected and used by the controller to produce an imageof the object like that made with a conventional scanning electronmicroscope.

[0285] Additionally, as discussed earlier, the SPM system 100 alsoinclude a radiation measurement system 389, as shown in FIG. 42. At eachscan point, the radiation measurement system is used to detect andmeasure radiation, such as secondary charged particles orelectromagnetic energy, reflected and/or emitted by the object 102 inresponse to the particle beam striking it. Specifically, the radiationmeasurement system makes a radiation measurement of the radiation itdetects at the scan point. For example, this radiation measurement maybe a spectrophotometric measurement of the spectrum of wavelengths ofthe detected radiation. In response, the radiation measurement systemprovides the radiation measurement to the controller 114 and thecontroller uses the radiation measurements collected over the scan togenerate inspection data in the manner discussed earlier.

[0286] In an alternative embodiment shown in FIG. 43, the radiationmeasurement system 389 may comprise a radiation detector 391 that islocated in the scanning head 120. In this case, the radiation detectormay comprise a semiconductor radiation detector as described in“Semiconductor Detectors” referenced earlier. However, in thisembodiment, the imaging optics 226 are replaced by the radiationdetector and the radiation measurement system also includes a radiationmeasurement circuit 393. Thus, at each scan point, the radiationdetector is used to detect radiation emitted by the object 102 inresponse to the e-beam striking it. The radiation measurement circuitthan makes a radiation measurement of the detected radiation andprovides it to the controller 114. The radiation measurements collectedover the scan are then used by the controller to generate inspectiondata in the manner just discussed.

[0287] The radiation measurements made with the eight SPM probe 122-8and the radiation measurement system 398 are particularly useful forinspecting a lithographic structure, such as a semiconductor fabricationmask. Such a lithographic structure is used to expose only a certainportion of a replicable structure to electrons with which it isirradiated during fabrication. Thus, after a repair and/or fabricationstep has been performed on the lithographic structure using any of theother SPM probes 122-1 to 122-8 to 122-18 discussed herein, the eightprobe can be used in conjunction with the radiation measurement systemto emulate the way in which such a replicable structure would be exposedto electrons by the lithographic structure during actual fabrication.

[0288] Specifically, at each scan spot, the controller 114 causes theeight SPM probe 122-8 to direct a e-beam at the lithographic structure.The radiation measurement system would then detect the resultingradiation that would be projected by the lithographic structure onto areplicable structure or that would be reflected and/or emitted by thelithographic structure. From the detected radiation, the controller 114generates a patterned image of the detected radiation. Thus, this servesto emulate the way in which the lithographic structure would expose sucha replicable structure to radiation during actual fabrication. Thecontroller then compares the generated patterned image with a recordedtarget patterned image to generate repair and/or fabrication data thatidentifies any further repair and/or fabrication step to be performed onthe lithographic structure. The entire process is then repeated untilthe generated patterned image has converged to the target patternedimage within a specified tolerance level.

SPM Modifications with SPM Probe 122-8

[0289] The SPM probe 122-8 can also be used to make SPM modifications ofthe object 102 using the e-beam it generates. Specifically, the userinstructs the controller 114 with the user interface 116 to use theprobe to make an SPM modification to the object 102. In doing so, thecontroller controls the positioning system 103 and the e-beam controlcircuit 383 in causing the probe to generate an e-beam that strikes theobject at a selected spot. This is done in the same way as describedearlier. However, in this case, e-beam can then be used to heat thematerial of or remove material from the object. Or, it can be done tomake chemical changes in the object. In this regard, an electron beamcan provide the energy and/or free electrons necessary to cause chemicalchanges or induce chemical combinations in materials. For instance anelectron beam can break bonds in proteins (including DNA and RNA) orpolymers like plastics, oils or cause solid, liquid or gaseous materialto change chemical states or go into combinations with materials muchlike heat or light can be used to make such changes. Typically an e-beamis more energetic and site specific then heating or electromagneticexposure (even at x-ray energies because of the difficulty of focusingor controlling very energetic photons such as x or gamma radiation.

Calibration of SPM Probe 122-8

[0290] The position of the e-beam tool 382 of the SPM probe 122-8 may becalibrated and its profile examined using the AFM probe 131 and SEMprobe 133 of the calibration structure 128-1 in the manner discussedearlier for the first SPM probe 122-1. Furthermore, the position of thee-beam tool 382 of the SPM probe 122-8 may be calibrated using thecalibration structure 128-2 shown in FIG. 11. This calibration structure128-2 may include one or more reference materials 188 on the insulatingmaterial 199 on the base 190 of the reference structure. Each referencematerial has a precisely known position with respect to the referencelocation. And, each reference material may comprise a material that hasknown radiation properties for when electrons strike it. For example,this may be a material, such as bismuth, which produces a known type ofradiation, such as xrays, in response to electrons striking it.

[0291] Turning again to FIG. 1, in this case, the controller 114 cancalibrate the position of the e-beam tool 382 of the SPM probe 122-8prior to making the radiation measurements just described. This is doneby controlling the positioning system 103 to attempt to position thee-beam tool over one of the reference materials 188 of the calibrationstructure 128-2. Then, referring to FIGS. 40 to 43, the controllercontrols the making of an e-beam with the e-beam tool in the mannerdiscussed earlier. From the radiation measurements made by the radiationmeasurement system 389, the controller generates a spectrum of themeasured wavelengths (i.e., frequency spectrum) and compares thegenerated spectrum with a stored known reference spectrum of wavelengthsfor radiation that results when an e-beam strikes the reference material188 If they match, this means that e-beam tool was positioned directlyover the reference material. Alternatively, the controller may cause thee-beam to be chopped or modulated and lock on the results from the x-raydetector based on this chopping or modulation. This is done in the samemanner discussed earlier for chopping or modulating the light emittedfrom the tip 138 of the SPM probe 122-1. When a peak in the intensity isdetected by the controller, then the e-beam tool is positioned directlyover the reference material. Thus, in a closed feedback loop, the e-beamtool is positioned, the e-beam is produced, the wavelengths or theintensity of the resulting radiation are measured, and the generated andreference spectrums are compared in the manner just described until itis determined by the controller that the e-beam tool is in factpositioned over the reference material. Once this occurs, the positionaloffset of the e-beam tool at the known position of the referencematerial is determined. Based on this positional offset, the precisepositioning of the e-beam tool with respect to the reference location isthen calibrated. If there are multiple reference materials, the resultsof the calibrations computed for all of the reference materials may becombined to provide a weighted or averaged calibration of the positionof the e-beam tool.

[0292] Referring to FIGS. 11 and 52, as mentioned earlier, thecalibration structure 128-2 may include one or more radiation detectiondevices 460. Turning again to FIG. 1, in this case, the controller 114calibrates the position of the e-beam tool 382 of the SPM probe 122-8 bycontrolling the positioning system 103 to attempt to position the e-beamtool over one of these radiation detection devices. Then, referring toFIG. 42, the controller causes the e-beam tool to produce an e-beam inthe manner just discussed. The radiation detected by the radiationdetector 464 of this radiation detection device is measured by theradiation measurement circuit 181. The controller analyses themeasurement to determine if the radiation detection device in factdetected the electrons of the e-beam generated by the e-beam tool. Thus,in a closed feedback loop, the e-beam tool is positioned, the e-beam isproduced, and the measurement from the radiation measurement circuit isanalyzed in the manner just described until it is determined by thecontroller that the e-beam tool is in fact positioned over the radiationdetection device. Once this occurs, a positional offset is computed andthe precise positioning of the e-beam tool with respect to the referencelocation is then calibrated based on the positional offset in the mannerdescribed earlier. If there are multiple radiation detection devices460, the results of the calibrations computed for all of these radiationdetection devices may be combined to provide a weighted or averagedcalibration of the position of the e-beam tool 382.

[0293] Referring to FIGS. 11 and 52, the calibration structure 128-2 mayfurther include one or more radiation detection devices 461. Each ofthese radiation detection devices is constructed like each radiationdetection device 460 described earlier, but includes instead a radiationdetector 464 for detecting radiation in the form of charged particles,such as ions, electrons, protons, or alpha particles, that pass throughthe aperture 467 of the aperture structure 166. Thus, this radiationdetector may simply comprise a collection electrode for collecting suchcharged particles. Then, the position of the e-beam tool is done in thesame manner as just described for the radiation detectors 460, exceptthat it is done with radiation measurements of the electrons of thee-beam that are collected by the collection electrode. Thesemeasurements are made by the radiation measurement circuit 181.

[0294] The radiation measurements of electrons collected with thecollection electrode 396 of an e-beam tool 382 of the SPM probe 122-8can also be used by the controller 114 to calibrate the e-beam tool forpositioning. This is done by scanning the probe over the firstcalibration structure 128-1 to produce an image of the first calibrationstructure 128-1 from the radiation measurements made at the scan points.This produced image is then compared with a stored reference image ofthe calibration structure which was produced similarly using a referenceparticle beam tool that was precisely scanned (or positioned) over thecalibration structure with respect to the reference location of the SPMsystem 100. The images are compared to determine the positional offsetbetween them. Based on the determined positional offset, precisepositioning of the e-beam tool with respect to the reference location isthen calibrated.

Vacuum Operation with Gas Bearing Structure for Maintaining Gap

[0295] As shown in FIGS. 40 to 42, the eight SPM probe 122-8 has anaperture 132. Thus, a microvacuum chamber in the gap 198 between theeight probe and the object 102 or calibration structure 128 may beestablished during operation of the probe in a similar manner asdescribed for the first SPM probe 122-1. Thus, the object 102 orcalibration structure 128 can be effectively irradiated with the e-beamproduced by the eight probe without the danger of the e-beam collidingwith other particles.

[0296] But, for the eight SPM probe, the gap 198 may be set with a gasbearing structure 402 formed in the base 130 of the probe. As shown inFIG. 40, the gas bearing structure comprises an inlet 403, an annularoutlet (or opening) 404, and a duct 405 for providing gas received atthe inlet to the outlet.

[0297] Referring to FIG. 1, as mentioned earlier, the components of theSPM system 100 include a fluid supply/sink system 344 and correspondingflexible tubes 345 for each scanning head 120. The fluid supply/sinksystem includes a corresponding valve 346 for each flexible tube so thateach flexible tube is connected to the fluid supply/sink system via thecorresponding valve. As shown in FIG. 42, one of the flexible tubes isconnected to a corresponding connector tube 347 of each of the scanningheads. Referring to FIG. 40, this connector tube is connected to theinlet 403 of the gas bearing structure 402 of the SPM probe 122-8.

[0298] Referring now to FIGS. 1, 40, and 42, when the controller 114controls the corresponding valve 346 of the fluid supply/sink system 344to open, a gas source of the fluid supply/sink system is in fluidcommunication with the gas bearing structure 402. This gas sourceprovides a gas that enters the inlet 403, travels through the duct 405,and exits at the outlet 404. The pressure of the exiting gas establishesa gas bearing between the lower surface 142 of the base 130 of the probeand the upper surface 166 of the object 102 or calibration structure128. This pressure may be approximately 1.1 atmospheres and issufficient to maintain the width of the gap 198.

[0299] Furthermore, the object 102 may comprise a small free moving orpartially constrained specimen, such as a micromachine or biologicalcell or material, and a flat specimen support structure, such asmicroscope slide, on which the specimen is located. In this case, themicrovacuum chamber is created in the gap 198 between the SPM probe122-8 and the specimen support structure. The annular outlet 404 of thegas bearing structure 402 and the aperture 132 can be selected so thatthe diameter of the specimen is smaller than the diameter of the annularoutlet. In this way, the specimen is kept centered at a fixed positionon the specimen support structure. Furthermore, in the case where thediameter of the specimen is larger than the diameter of the annularoutlet, the specimen can still be kept centered and in a fixed positionon the specimen support structure by the pressure of the gas exiting theoutlet. Thus, the SPM system 100 may include multiple SPM probes 122-8with annular outlets and apertures of different diameters for differenttypes of objects that are to be inspected or modified.

[0300] In alternative embodiment, multiple outlets could be used ratherthan the single annular outlet 405. In this case, the multiple outletscould be arranged in a triangular fashion. In this way, the maintenanceof the width of the gap 198 would be triangulated.

[0301] Referring back to FIG. 1, the components of the SPM system 100also includes a valve 310 for each flexible tube 307 connected to ascanning head 120. Thus, by controlling the valve, the pressure of thegas that exits the outlets 304 of the gas bearing structure can beprecisely controlled by the controller 114. In this way, the controllercan precisely control the width of the gap 198.

[0302] As those skilled in the art will recognize, the SPM probes 122-1to 122-7 described earlier could also be constructed with a gas bearingstructure 302 in order to establish a microvacuum chamber in the gap198. Conversely, the microvacuum chamber in the gap 198 for the eightSPM probe 122-8 could be established instead in the manner describedearlier for the first SPM probe 122-1. In this case, the eight probewould include the gap sensors 164 discussed earlier. Furthermore, theeight probe could have a particle removal structure 342 as describedearlier for the fifth SPM probe 122-5. In this case, referring to FIG.27, the inlet 332, the duct 340, and the outer annular outlet 336 or theinlet 330, the duct 341, and the inner annular outlet 335 could be usedas the gas bearing structure 402.

Vacuum Operation with Conformal Seal

[0303] Referring to FIG. 42, in alternative embodiment, a conformal seal412 could be used to establish the microvacuum chamber in the gap 198.The conformal seal could be attached to the probe holder 156 of thescanning head 120 or to the SPM probe 122-8 itself. The conformal sealwould create a seal between the lower surface 142 of the base 130 of theprobe and the upper surface 166 of the object 102 or calibrationstructure 128. This would enable the microvacuum chamber to beestablished in the gap without the need of maintaining the precise widthof the gap as is done using the gap sensors 164 or the gas bearingstructure 402 discussed earlier. As with the gas bearing structure, theconformal seal could also be used in order to establish a microvacuumchamber in the gap 198 for the SPM probes 122-1 to 122-7 describedearlier.

Structure of SPM Probe 122-9

[0304] Turning now to FIG. 44, there is shown a ninth microstructuredSPM probe 122-9 for use in making SPM modifications of the object 102.The probe has fluid material delivery tools 414 that each deliver fluidmaterial to the object. This fluid material may simply comprise a fluid,such as a gas or liquid chemical, or it may comprise smallmicrostructure, such as biological matter, and a carrier fluid, such asa gas or liquid biological agent, in which the small microstructure arecarried.

[0305] Each fluid material delivery tool 414 has a support platform 416,such as a cantilever, and a tip 418 on the support platform. The supportplatform is connected to the base 130 of the SPM probe 122-9 andsuspended in the aperture 132 of the base within the corresponding innerperimeter surface 134 of the base. This is done so that the tip isbetween the lower and upper surfaces 142 and 140 of the base to preventit from being damaged. The support platform may be separately formed ormay be an integral portion of the base. Otherwise, the base has the samebasic shape and construction as the base discussed for the first probe122-1.

[0306] Turning now to FIG. 45, the tip 418 of each fluid materialdelivery tool 414 includes a capillary 420 in the core material 144 ofthe tip. The capillary is connected to and in fluid communication with aduct 422 in the support platform 416 of the tool. The duct is connectedto and in fluid communication with the outlet 425 of a microstructuredpump 424 of the fluid material delivery tool. In this embodiment, thepump is formed in the base 130 of the SPM probe 122-9.

[0307] The pump 424 has an inlet 426 on the upper surface 140 of thebase for receiving fluid material to be delivered to the object 102. Theinlet is connected to and in fluid communication with a pumping chamber428 of the pump. Between the pumping chamber and the inlet of the pumpis a check valve 430. The check valve includes a sealing plate 432 thatextends across the inlet and is suspended in the inlet by a suspensionmechanism 433 that comprises spring arms or a spring web. The checkvalve further includes sealing arms 434 that extend out from the sealingplate. The inlet includes sealing seats 436 for the sealing arms 434.The pump also includes a venting chamber 438 and a flexible membrane (ordiaphragm) 440 between the pumping chamber and the venting chamber. Themembrane serves as a displaceable lower wall of the pumping chamber anda displaceable upper wall of the venting chamber. One or more ventingoutlets 439 of the pump are located on the lower surface 142 of the baseand are connected to and in fluid communication with the ventingchamber. On the fixed lower wall of the venting chamber, the pumpfurther includes an insulating plate 441 and a plate electrode 442 onthe insulating plate.

[0308] The base 130, the tip 418, the support structure 416, themembrane 440, the suspension mechanism, the sealing plate 432, and thesealing arms 436 may be integrally formed together and comprise asemiconductor material, such as polysilicon, that is conductive. Theplate electrode 442 may comprise a conductive material, such aspolysilicon or tungsten. And, the insulating plate 441 may comprise aninsulating material, such as silicon dioxide.

Probe Loading and Unloading, Vacuum Operation, and Particle RemovalOperation of SPM Probe 122-9

[0309] Referring to FIG. 46, the ninth SPM probe 122-9 may be loadedonto one of the scanning heads 120 in the same ways as were describedearlier for the first probe. In addition, the tip 418 of each fluidmaterial delivery tool 416 may have its profile examined in the mannerdiscussed earlier for the first probe. The tip may be activated anddeactivated in the ways described earlier for the first probe.Furthermore, optical images would be produced by the imaging optics 226during operation and/or calibration of the ninth probe in the mannerdiscussed earlier for the first probe. During operation and/orcalibration, a microvacuum chamber in the gap 198 between the ninthprobe and the object 102 or calibration structure 128 may be establishedin any of the ways described earlier for the first probe with theaperture 132 and the gap sensors 164 of the ninth probe. Or, the ninthprobe may include instead a gas bearing structure 342 like thatdescribed earlier for the eight SPM probe 122-8. Finally, the ninthprobe could also include a particle removal structure 342 to removeparticles during operation and/or calibration in the manner describedearlier for the fifth SPM probe 122-5.

SPM Modifications with SPM Probe 122-9

[0310] Turning to FIG. 1, in order to make SPM modifications to theobject 102 by delivering fluid material to the object 102 with the SPMprobe 122-9, the fluid supply/sink system 344 includes a fluid materialsource for each of the fluid material delivery tools 414 of the probe.Each fluid material source is connected to a corresponding flexible tube345 for each scanning head 120. As shown in FIG. 46, each of theseflexible tubes is connected to a corresponding connector tube 347 of thescanning head. Each connector tube is in turn connected to acorresponding fluid material delivery tool 414.

[0311] The controller 114 then controls the positioning system 103 toposition the probe for a scan of the object 102. Referring back to FIGS.44 to 46, at each scan point, the controller causes the correspondingvalve 346 to open so that the fluid source is in fluid communicationwith a selected fluid material delivery tool 414 of the probe whose tip418 has been activated. As a result, the fluid material source providesthe fluid material delivery tool with the fluid material.

[0312] Referring back to FIG. 45, at each scan point, the fluid materialis received from the connector tube 347 at the inlet 426 of the pump 424of the selected fluid material delivery tool 414 with a pressuresufficient to open the check valve 430. In doing so, the pressure of thefluid material on the sealing plate 432 of the check valve has a forcelarger than the spring force of the suspension mechanism 433. As aresult, the sealing plate lifts the sealing arms 434 off of the sealingseats 436 of the inlet. The fluid material then travels through theinlet into the pumping chamber 428 of the pump.

[0313] The components of the SPM system 100 further include a pumpingcontrol circuit 444. At each scan point, while the fluid material isbeing provided to the pumping chamber 428 of the pump 424, a voltage isapplied across the membrane 440 and the plate electrode 442 by thepumping control circuit 444 so that the membrane is displaced from itsnormal position toward the plate electrode and the pumping chamber isexpanded. This is done in such a way that the pressure of the fluidmaterial in the pumping chamber is kept below that which would cause thefluid material to be ejected by the capillary 420 of the activated tip418. Furthermore, the ambient gas in the venting chamber 438 is ventedout of the venting outlets 439 when this occurs so that the pressure ofthe ambient gas in the venting chamber is maintained at a constantlevel.

[0314] At each scan point, when the pumping chamber 428 contains thefluid material to be delivered to the object 102, the controller 114causes the pumping control circuit 444 to apply a voltage across themembrane 440 and the plate electrode 442 which causes the springrestoring force of the membrane to restore the membrane to its normalposition. This increases the pressure of the fluid material in thepumping chamber. This pressure on the sealing plate 432 of the checkvalve 430 causes the sealing plate to seat the sealing arms 433 on thesealing seats 436 of the inlet 426 so that the check valve is closed.Then, because of the increased pressure, the fluid material is pumpedfrom the pumping chamber out through the outlet 425 of the pump 424 andinto the duct 422. The fluid material travels through the duct and intothe capillary 420 of the activated tip 418 and is ejected by thecapillary. In this way, the fluid material is delivered to the object102.

[0315] As shown in FIG. 46, the other components 123 of the SPM system100 may include a electroresisitive material and a drive connection atthe nozzle of the ion beam tool to heat the fluid. Or it may include alaser (or other electromagentic source such as a microwave genratoretc.) directed at the nozzle of the ion beam tool. Or, a catalyticsubstance may be placed on the outside of the nozzle or adjacent to iton the tool probe. Or, an ultrasonic source may induce a change in theejected fluid by exciting the object with ultrasound from below orintegrated in the probe 122-10. Finally, a magnetic field from a coillocated on the probe can be used to induce the fluid to change.

[0316] Furthermore, as mentioned earlier and shown in FIG. 44, the SPMprobe 122-9 includes multiple fluid material delivery tools 414. Thus,each fluid material delivery tool could be used to deliver a differentfluid material from any of the other fluid material delivery tools.

Calibration of SPM Probe 122-9

[0317] The position of each fluid material delivery tool 414 of the SPMprobe 122-9 may be calibrated and its profile examined using the AFMprobe 131 and SEM probe 133 of the calibration structure 128-1 in themanner discussed earlier for the first SPM probe 122-1. Furthermore, theposition of the each fluid material delivery tool may be calibratedusing the calibration structure 128-2 shown in FIG. 11.

Structure of SPM Probe 122-10

[0318] Turning now to FIGS. 47 and 48, there is shown a tenthmicrostructured SPM probe 122-10 for use in making SPM modifications ofthe object 102. The probe has pipette tools 446 that each can removefluid material from and/or around the object. As with the fluid materialdelivery tools 414, this fluid material may simply comprise a fluid,such as a gas or liquid chemical, or it may comprise smallmicrostructure, such as biological matter or contaminant particles onand/or around the object, and a carrier fluid, such as a gas or liquidbiological agent or ambient gas, in which the small microstructure arecarried. Furthermore, each pipette tool 446 is constructed like eachfluid material delivery tool 414 of the SPM probe 122-10. However, inthe embodiment of FIG. 47, the pump 424 does not have a check valve 430and, in the embodiment of FIG. 48, the pump does not have the checkvalve and the inlet 426.

Probe Loading and Unloading, Tip Activation and Deactivation, VacuumOperation, and Particle Removal Operation of SPM Probe 122-10

[0319] The tenth SPM probe 122-10 may be loaded onto and unloaded fromone of the scanning heads 120 in the same ways as were described earlierfor the first probe and similar to that shown for the ninth SPM probe122-9 in FIG. 46. Thus, the tip 418 of each pipette tool 446 of thetenth probe may be activated and deactivated in the ways describedearlier for the first probe. And, the tip may have its profile examinedin the manner discussed earlier for the first probe. Furthermore,optical images would be produced by the imaging optics 226 duringoperation and/or calibration of the tenth probe in the manner discussedearlier for the first probe. During operation and/or calibration, amicrovacuum chamber in the gap 198 between the tenth probe and theobject 102 or calibration structure 128 may be established in any of theways described earlier for the first probe with the aperture 132 and thegap sensors 164 of the tenth probe. Or, the tenth probe may includeinstead a gas bearing structure 342 like that described earlier for theeight SPM probe 122-8. Finally, the tenth probe could also include aparticle removal structure 342 to remove particles during operationand/or calibration in the manner described earlier for the fifth SPMprobe 122-5.

SPM Modifications with SPM Probe 122-10

[0320] Turning to FIG. 1, in order to make SPM modifications to theobject 102 by removing material from the object 102 with the SPM probe122-10, the controller 114 controls the positioning system 103 toposition the probe for a scan of the object 102. This is done at eachscan point so that the capillary 420 of the activated tip 418 of aselected pipette tool 446 of the probe is positioned in or near thematerial of the object.

[0321] Referring to the embodiment of FIG. 47, in order to make SPMmodifications to the object 102 by removing fluid material from theobject 102 with the SPM probe 122-10, each pipette tool 446 of the probeis in fluid communication with the vacuum source 192 via the inlet 426at each scan point. This is done in same manner as discussed earlier forthe aperture 132 of the first SPM probe 122-1. Alternatively, the inletmay be directly connected to the vacuum source via one or more tubes.Or, as in the embodiment of FIG. 48, the inlet may be removed for eachpipette tool 446 so that each pipette tool is self contained within theprobe.

[0322] At each scan point, the controller causes the pumping controlcircuit 444 to apply a voltage across the membrane 440 and the plateelectrode 442 of the pump 424 so that the membrane is displaced from itsnormal position toward the plate electrode and the pumping chamber isexpanded. As a result, the fluid material to be removed from and/oraround the object is drawn into the capillary of the tip, through theduct 422, and into the pumping chamber 428 via the inlet/outlet 425 ofthe pump. At the same time, the ambient gas in the venting chamber 438is vented out of the venting outlets 439 when this occurs so that thepressure of the ambient gas in the venting chamber is maintained at aconstant level. The material can then be ejected from the pumpingchamber at a desired location or repository of the SPM system 100 in themanner described earlier for the SPM probe 122-9.

Calibration of SPM Probe 122-10

[0323] The position of each pipette tool 446 of the SPM probe 122-10 maybe calibrated and its profile examined using the AFM probe 131 and SEMprobe 133 of the calibration structure 128-1 in the manner discussedearlier for the first SPM probe 122-1. Furthermore, the position of eachpipette tool may be calibrated using the calibration structure 128-2shown in FIG. 11.

Structure of SPM Probe 122-11

[0324] Turning now to FIG. 40, there is shown an eight SPM probe 122-8for use in making SPM measurements of the object 102 and/or SPMmodifications of the object 102. In this case, the SPM measurements andthe SPM modifications are made in response to radiation in the form ofcharged particles that are produced by the probe and directed at theobject.

[0325] Turning now to FIG. 49, there is shown an eleventh SPM probe122-11 for use in making SPM measurements and/or SPM modifications ofthe object 102. Here, like the eight SPM probe 122-8, the SPMmeasurements and the SPM modifications are made in response to radiationin the form of charged particles that are produced by the probe anddirected at the object. But, in this case, the charged particlescomprise an ion beam produced by one of the ion beam tools 450 of theeleventh probe.

[0326] Referring to FIG. 50, each ion beam tool 450 is constructed likeone of the fluid material delivery tools 414 of the ninth SPM probe122-9, except for several differences. Namely, like each abeam tool ofthe eight SPM probe 122-8, each ion beam tool includes an acceleratingelectrode 392, a steering electrode assembly 394, a collection electrode396, and insulating support structures 398 on the support structure 416of the tool. Here, the accelerating electrode is disposed below theopening of the capillary 420 of the tip 418. Otherwise, the base and thepump 424 formed in the base have the same basic shape and constructionas that discussed for the ninth probe.

Probe Loading and Unloading, Tip Activation and Deactivation, VacuumOperation, and Particle Removal Operation of SPM Probe 122-11

[0327] Referring to FIG. 51, the eleventh SPM probe 122-11 may be loadedonto and unloaded from one of the scanning heads 120 in the same ways aswere described earlier for the first probe. Thus, the tip 418 of eachion beam tool 450 of the eleventh probe may be activated and deactivatedin the ways described earlier for the first probe. And, the tip may haveits profile examined in the manner discussed earlier for the firstprobe. Furthermore, optical images would be produced by the imagingoptics 226 during operation and/or calibration of the eleventh probe inthe manner discussed earlier for the first probe. During operationand/or calibration, a microvacuum chamber in the gap 198 between theeleventh probe and the object 102 or calibration structure 128 may beestablished in any of the ways described earlier for the first probewith the aperture 132 and the gap sensors 164 of the eleventh probe. Or,the eleventh probe may include instead a gas bearing structure 342 likethat described earlier for the eight SPM probe 122-8. Finally, theeleventh probe could also include a particle removal structure 342 toremove particles during operation and/or calibration in the mannerdescribed earlier for the fifth SPM probe 122-5.

SPM Modifications with SPM Probe 122-11

[0328] As mentioned earlier, the SPM probe 122-11 can be used to makeSPM modifications of the object. Referring now to FIG. 1, in doing so,the controller 114 controls the positioning system 103 to position theprobe for a scan of the object 102. Then, referring to FIGS. 1 and 49 to51, at each scan point, the inlet 426 of each ion beam tool 450 is influid communication with a fluid source of the fluid supply/sink system344 to receive fluid. This is done via a corresponding valve 346,flexible tube 345, and connector tube 347 in the same manner as wasdescribed for each fluid material delivery tool 414 of the SPM probe122-9. Then, at each scan point, the controller 114 controls the pumpingcontrol circuit 444 to cause the pump 424 of the ion beam tool to pumpthe fluid out of the capillary 420 of the tip 418. This is done in themanner discussed earlier for each fluid material delivery tool.

[0329] The other components 123 of the SPM system 100 further include anion beam control circuit 454. At the same time that the fluid is beingejected, the controller controls the ion beam control circuit to apply avoltage to the accelerating electrode 392 to ionize the ejected fluid.As a result, the ion beam tool 450 produces an ion beam that is directedat the object 102. As mentioned earlier for the first and eight SPMprobes 122-1 and 122-8, because of the microvacuum chamber, the object102 can be effectively irradiated with the ion beam without collidingwith other particles.

[0330] The ion beam can be steered by the steering electrodes 395 of thesteering electrode assembly 394 in the same way as that described forthe e-beam produced by the e-beam tool 382 of the eight SPM probe 122-8.In addition, the SPM probe 122-11 could have steering magnets 385 andsteering coil 387 like those of the SPM probe 122-8 in order to furthersteer the ion beam.

[0331] The ion beam can then used as a plasma torch to heat the materialof or remove material from the object. Or, in the case where the objectis a semiconductor material, it could be used to dope the object withions. Moreover, the ion beam can be used to go in chemical recombinationwith the target. For example, this may be done to bombard silicon withcarbon ions (by biasing the silicon substrate electrically with respectto the plasma) which go into the surface to form SiC (silicon carbide)chemical.

SPM Inspections with SPM Probe 122-11

[0332] As mentioned earlier, the SPM probe 122-11 can be used to makeradiation measurements in order to inspect the object 102. To do so, thecontroller 114 controls the positioning system 103 to position the probe122-8 for a scan of the object 102. At each scan point, the controllercauses a selected ion beam tool 450 of the probe to direct an ion beamat the object in the manner discussed earlier.

[0333] Referring back to FIGS. 40 to 42, at each scan point, thecontroller causes the ion beam control circuit 454 to produce an ionbeam in the manner just discussed. Then, when the ion beam interactswith the object 102, it causes secondary radiation to be reflectedand/or emitted back to the collection electrode 396. This causes acurrent in the collection electrode which represents the ions thatcontact the collection electrode. This current is measured by the ionbeam control circuit as a radiation measurement of the ions collected bythe collection electrode. The radiation measurements made at all of thescan points may be collected and used by the controller to produce animage of the object like that made with a conventional electronmicroscope or other conventional particle microscope.

[0334] In addition, the radiation measurement system 389 may be used todetect and measure radiation, such as Optical, Radiofrequency orX-radiation (depending on the beam energy and the target), emitted bythe object 102 in response to the ion beam striking it. This is done inthe same manner as that discussed earlier for the e-beam tool 382 of theSPM probe 122-8, except that it is done in response to the Ion beamstriking the object.

[0335] As with the eight SPM probe 122-8, the radiation measurementsmade with the eleventh SPM probe 122-11 and the radiation measurementsystem 398 are particularly useful for inspecting a lithographicstructure, such as a semiconductor fabrication mask. This would be donein the same manner as was described earlier using the e-beam produced bythe eight probe, except that an ion beam would be used.

Calibration of SPM Probe 122-11

[0336] The position of each ion beam tool 450 of the SPM probe 122-11may be calibrated and its profile examined using the AFM probe 131 andSEM probe 133 of the calibration structure 128-1 in the manner discussedearlier for the first SPM probe 122-1. Furthermore, the position of eachion beam tool may be calibrated using the calibration structure 128-2shown in FIG. 11 in the manner discussed next.

[0337] The calibration structure 128-2 may include one or more referencematerials 458 on the insulating material 199 on the base 190 of thereference structure. Each reference material has a precisely knownposition with respect to the reference location. And, each referencematerial may comprise a material that has known radiation properties forwhen ions strike it. For example, this may be a material, such astungsten, which produces specific wavelengths of radiation, such as xrays, in response to ions striking it. Then, the position of the ionbeam tool is calibrated using these reference materials in the same waythat the position of the e-beam tool 382 of the eight SPM probe 122-8 iscalibrated using the reference materials 191, except that an ion beam isused.

[0338] Furthermore, referring to FIGS. 11 and 52 and as discussedearlier for the eight SPM probe 122-8, one or more of the radiationdetection devices 461 of the calibration structure 128-2 may each have aradiation detector 464 that detects charged particles, such as ions. Thecontroller 114 calibrates the position of the selected ion beam tool 450of the SPM probe 122-11 using these radiation detection devices in asimilar manner to that discussed for the e-beam tool 382 of the eightprobe. Here, however, the radiation measurements made by the radiationmeasurement circuit 181 are a measure of ions detected by the radiationdetectors in response to an ion beam produced by the selected ion beamtool.

Structure of SPM Probe 122-12

[0339] Turning now to FIG. 53, there is shown a twelfth SPM probe 122-12for use in making SPM modifications of the object 102 depositingmaterial on and/or removing material from the object 102. The twelfthprobe has vacuum arc tools 470 that are each suspended in acorresponding aperture 132 of the base 130 of the twelfth probe. And,like the eight SPM probe 1228, the twelfth probe also has a particleremoval structure 342 and gap sensors 164 formed in the base 130 of theprobe. Otherwise, the base has the same basic shape and construction asthat discussed for the first SPM probe 122-1.

[0340] Referring to FIG. 54, each vacuum arc tool 470 includes a pump424 that is formed in the base 130 like each fluid material deliverytool 414 of the ninth SPM probe 122-9. However, in this case, the pumpincludes two outlets 425. Between each outlet and the pumping chamber428 is a corresponding outlet valve 476.

[0341] Each outlet valve 476 includes a sealing plate 478 that extendsacross the corresponding outlet and is suspended in the outlet by asuspension mechanism 479 that comprises spring arms or a spring web. Theoutlet valve further includes sealing arms 480 that extend out from thebase. In its normal position, the sealing plate is seated against thesealing arms so as to form a tight seal that prevents any fluid fromentering the outlet. This is due to the spring force of the suspensionmechanism. The sealing plate, the sealing arms, and the suspensionmechanism may integrally formed with the base. Thus, the sealing platecomprises a conductive semiconductor material. Each outlet valve alsoincludes an insulating plate 482 on the inner surface of the outlet anda plate electrode 484 on the insulating plate. The plate electrode maycomprise a conductive material, such as polysilicon or tungsten, and theinsulating plate may comprise an insulating material, such as silicondioxide.

[0342] In addition, each vacuum arc tool 470 has a support platform 472that is connected to the base 130 of the SPM probe 122-12 and suspendedin the aperture 132 of the base within the corresponding inner perimetersurface 134 of the base. This is done so that the tool is between thelower and upper surfaces 142 and 140 of the base to prevent it frombeing damaged. The support platform may be separately formed or may bean integral portion of the base. Each vacuum arc tool also includes aninsulating plate 486 on the support platform and a cathode 487 on theinsulating plate. And, each tool includes a support structure 488 and ananode 490 on the support structure. The support structure suspends theanode over the cathode. The anode has an aperture 491.

[0343] Each vacuum arc tool 470 further includes outlet ducts 492 and494 formed in the support platform 472. Each of the outlet ducts isconnected to a corresponding outlet 425 of the pump 424. The outlet duct492 opens into the aperture 132 so that fluid can be pumped into thespace between the anode 490 and the cathode 487. The other outlet ductopens into the aperture so that fluid may be pumped into the spacebetween the anode and the object 102.

Probe Loading and Unloading, Calibration, Vacuum Operation, and ParticleRemoval Operation of SPM Probe 122-12

[0344] Referring to FIG. 55, the twelfth SPM probe 122-12 may be loadedonto and unloaded from one of the scanning heads 120 in the same ways aswere described earlier for the first SPM probe 122-1. And, each vacuumarc tool 470 may have its profile examined in the manner discussedearlier for the first probe. And, optical images would be produced bythe imaging optics 226 during operation and/or calibration of thetwelfth probe in the manner discussed earlier for the first probe.During operation and/or calibration, a microvacuum chamber in the gap198 between the twelfth probe and the object 102 or calibrationstructure 128 may be established in any of the ways described earlierfor the first probe with the aperture 132 and the gap sensors 164 of thetwelfth probe. Or, the twelfth probe may include instead a gas bearingstructure 342 like that described earlier for the eight SPM probe 122-8.Finally, the particle removal structure 342 removes particles duringoperation and/or calibration in the manner described earlier for thefifth SPM probe 122-5.

SPM Modifications with SPM Probe 122-12

[0345] The SPM probe 122-12 is used to make SPM modifications of theobject by depositing material on the object or removing some of thematerial of the object. Referring now to FIG. 1, in doing so, thecontroller 114 controls the positioning system 103 to position the probefor a scan of the object 102.

[0346] Referring to FIGS. 1 and 53 to 55, at each scan point, the inlet426 of each vacuum arc tool 470 is in fluid communication with a fluidsource of the fluid supply/sink system 344 to receive fluid. This isdone via a corresponding valve 346, flexible tube 345, and connectortube 347 in the same manner as was described for each fluid materialdelivery tool 414 of the SPM probe 122-9. Then, at each scan point, thecontroller 114 controls the pumping control circuit 444 to cause thepump 424 of the vacuum arc tool to pump the fluid out of one of theoutlet ducts 492 and 494. This is done in the manner discussed earlierfor each fluid material delivery tool except that the outlet valves 476are used to control which outlet duct the fluid is ejected from. Forexample, if material is being deposited on the object 102, then thecontroller 114 causes the pumping control circuit to open the outletvalve that is connected to the outlet duct 492 while keeping the otheroutlet valve closed. As a result, the fluid is pumped into the spacebetween the anode 490 and the cathode 487. Alternatively, if material isbeing removed from the object, then the controller causes the pumpingcontrol circuit to open the outlet valve connected to the outlet duct494 while keeping the other outlet valve closed. In this case, the fluidis pumped into the into the space between the anode and the object 102.

[0347] In order to open one of the outlet valves 476, the pumpingcontrol circuit 444 applies a voltage across the sealing plate 478 ofthe outlet valve and the plate electrode 474. This causes the sealingplate to overcome the spring force of the suspension mechanism 479 ofthe outlet valve so that the sealing plate is displaced from its normalposition of being seated against the sealing arms 480 of the outletvalve. Then, in order to close the outlet valve, the pumping controlcircuit applies an appropriate voltage across the sealing plate and theplate electrode so that the sealing plate moves back to its normalposition. This is due to the spring force of the suspension mechanism.As those skilled in the art will recognize, the outlet valves justdescribed could also be used in place of the check valves 430 of the SPMprobes 122-9 and 122-11.

[0348] The other components 123 of the SPM system 100 further include avacuum arc control circuit 496. In the case where material is beingdeposited on the object 102, the controller controls the vacuum arccontrol circuit at each scan point to apply a voltage to across theanode 490 and the cathode 487. Since a microvacuum chamber is created inthe gap 198, a vacuum arc is created due to the presence of the fluidpumped into the space between the anode and the cathode. This vacuum arccauses material from the cathode to be ejected through the aperture ofthe anode and deposited on the object. The type of fluid, the materialof the cathode 487, and some of the other components 123 of the SPMsystem 100 are appropriately selected in order to deposit a desiredmaterial on the object 102.

[0349] For example, it may be desired to deposit diamond like carbon onthe object 102 to make the object harder. In this case, the fluid couldbe argon, the material of the cathode 487 would be carbon, and the othercomponents 123 of the SPM system 100 would include a magnetic fieldsource to create a magnetic field for deposition of the diamond likecarbon. This may be done in the manner and under the conditionsdiscussed in “Multilayer Hard Carbon Films with Low Wear Rates”, by JoelW. Ager et. al., Surface and Coatings Technology, ______, Properties ofVacuum Arc Deposited Amorphous Hard carbon Films”, by Simone Anders et.al., Applications of Diamond Films and Related Materials: The ThirdInternational Conference, pp. 809-812,1995, “Hardness, Elastic Modulus,and Structure of Very Hard Carbon Films Produced by Cathodic-ArcDeposition with Substrate pulse Biasing”, by George M. Pharr et. al.,Applied Phys. Lett., vol. 68 (6), pp. 779-781, Feb. 5, 1996, and“Development of Hard Carbon Coatings for Thin-Film tape Heads”, byBharat Bhushan and B. K. Gupta, IEEE Trans. Magn., vol. 31, 2976-2978,1995, which are all hereby incorporated by reference. Specifically, thismay be done with multiple layers of the diamond like carbon to increasethe overall strength of the deposited material.

[0350] Furthermore, it may also be desired to deposit metal on theobject In this case, the fluid would be argon and the material of thecathode 487 would be a metal.

[0351] As mentioned earlier, the SPM probe 122-12 includes multiplevacuum arc tools 470. Thus, each vacuum arc tool could be used todeposit a different material on the object than the other vacuum arctools. This means that each vacuum arc tool could include a cathode 487with a different material and may be used with different othercomponents 123 of the SPM system than any of the other vacuum arc toolsof the probe.

[0352] Furthermore, in the case where material is being removed from theobject 102, the controller controls the vacuum arc control circuit 496at each scan point to apply a voltage across the anode 490 and theobject. Here, a vacuum arc is created due to the presence of the fluidpumped into the space between the anode and the object and themicrovacuum chamber in the gap 198. This vacuum arc causes material fromthe object to be ejected from the object toward the SPM probe 122-12.The type of fluid used would be argon.

[0353] As an additional note, the SPM probe 122-12 could be constructedwithout the pump 424. In this case, the gases used would be directlyprovided to the outlet ducts 492 and 494 formed in the support platform472 under the control of the controller 114.

Calibration of SPM Probe 122-12

[0354] The position of each vacuum arc tool 470 of the SPM probe 122-12may be calibrated and its profile examined using the AFM probe 131 andSEM probe 133 of the calibration structure 128-1 in the manner discussedearlier for the first SPM probe 122-1. Furthermore, the position of eachvacuum arc tool may be calibrated using the calibration structure 128-2shown in FIG. 11 in the manner discussed next.

Heating and Cooling with SPM probe 122-12

[0355] Referring to FIGS. 53 and 55, as mentioned earlier, the twelfthSPM probe 122-12 includes a particle removal structure 342 to removeparticles during operation and/or calibration in the manner describedearlier for the fifth SPM probe 122-5. However, the particle removalstructure could also be used to heat the object 102 to a targettemperature during deposition of material on the object or removal ofmaterial from the object. In this case, the gas source of the fluidsystem 344 that provides the low viscosity high pressure gas to theinlet 332 of the particle removal structure would heat this gas to thetarget temperature. As a result, the heated gas travels through the duct340 and exits the outlet 336 so that the object is heated to the targettemperature. Similarly, the aperture 132 or the other outlets or inlets337 and 336 could also be used to heat or cool the object 102 in thesame way by introducing gas provided from the fluid system 344.

[0356] Similarly, the other components 123 of the SPM system 100 mayinclude a local heating source to locally heat the object 102 under thecontrol of the controller 114. This heating source may do so withinductive heating, flame heating, resistive heating, etc. Or, the SPMprobe may itself have an integrated heater 467 that comprises resistiveor inductive heating elements 471 located in the probe which arecontroller by the heater control circuit 466. Or, the heater source maycomprise an external laser or flame source. Then, the gas source couldcool the gas provided through the aperture 132 or one of the outlets orinlets 335 to 337 so that the cooled gas would be used to regulate thetarget temperature of the object for deposition or removal of material.

Deposition of Diamond

[0357] In the case where DLC is deposited on the object 102 using theSPM probe 122-12, the probe could also be used to grow diamond crystalsat the DLC seed sites in the manner described earlier. In this case, theother components 123 of the system would include a magnetic fieldsource.

[0358] Thus, referring again to FIG. 72, the controller causes a valve345 that is 20 connected to a tube 346 which is connected to theinternal chamber 135 of the scanning head 120 to be opened. As a result,the aperture 132 is in fluid communication with a gas source of thefluid system 344 that provides methane and hydrogen or methane andargon. These gases are introduced into the internal chamber and thenflow through the aperture and into the differential pressure chambercaused in the gap 198. These gases may flow out of one of the outlets orinlets 335 to 337 to a gas sink of the fluid system via a correspondingtube 346.

[0359] The controller 114 then causes the heater 467 to heat the gases.As mentioned earlier, the heater may comprise resistive or inductiveheating elements 471 located at the surfaces 142 of the probe or anexternal laser or flame source that is one of the other components 123of the inspection and/or modification system. As a result, CVDdeposition of diamond occurs on the object such that polycrystallinediamond is grown at the seed sites provided by the DLC.

Structure of Aperture Plate 122-13

[0360] Referring to FIG. 56, there is shown a microstructured apertureplate (or probe) 122-9 with an aperture 132 and a gas bearing structure402 like the eight SPM probe 122-8. In fact, the aperture plate isconstructed like the eight probe, except that it does not include ane-beam tool 382.

Modifications using Aperture Plate

[0361] Still referring to FIG. 57, the aperture plate 122-13 may beloaded onto and unloaded from one of the scanning heads 120 in the sameways as were described earlier for the first SPM probe 122-1.Furthermore, the SPM system 100 may include a scanning head 120 thatcontains a conventional radiation source 410 within the housing 154 ofthe scanning head. The radiation source may comprise an ion beam source,e-beam source, other particle beam source, xray source, or light source.

[0362] Referring to FIG. 1, the controller 114 controls the positioningsystem 103 to position the probe 122-8 for a scan of the object 102.Turning to FIG. 57, at each scan point, the controller causes theradiation source 410 to produce a selected kind of radiation. Similar tothe e-beam and ion beam produced by the SPM probes 122-8 and 122-11, theradiation in this case travels through the aperture 132 of the apertureplate 122-13 and strikes the object 102. In the case of an e-beam or anion beam, the object may be modified in the manner discussed earlier forthe eight and eleventh probes. The radiation may be steered in themanner described earlier for the eight SPM probe 122-8 with steeringmagnets 385 on the base 130 of the aperture plate and a steering coil387 on the probe holder 156 of the scanning head.

Inspections with Aperture Plate 122-13

[0363] Referring to FIG. 57, a conventional radiation detector 413 maybe integrated with the radiation source 410 to detect radiationreflected and/or emitted by the object in response to the radiationproduced by the radiation source. For example, this radiation may besecondary electrons, ions, xrays, gamma rays, alpha particles, visible,infrared light, and/or ultraviolet light.

[0364] Referring again to FIG. 1, in order to inspect the object 102with radiation supplied by the radiation source 410, the controller 114controls the positioning system 103 to position the probe 122-8 for ascan of the object 102. At each scan point, the controller causes theradiation source 410 to produce radiation that strikes the object in themanner described earlier. The resulting radiation that is reflected oremitted in response passes through the aperture 132 of the apertureplate 122-13 and is detected by the radiation detector 413. Theradiation detector makes a measurement of the detected radiation at thisscan point and provides this measurement to the controller. Thecontroller collects all of the measurements over the scan and generatesan image and/or analyses of the object.

[0365] As those skilled in the art will recognize, the radiation source410 and the radiation detector 413 may be integrated to form a completeconventional SEM assembly that is housed by the housing 154 of thescanning head 120 and operated by the controller 114. In this case, theradiation source provides an e-beam and the radiation detector collectsthe resulting scattered electrons. Moreover, as will be discussed next,the SEM assembly can be operated with a microvacuum chamber created inthe gap 198 between the object 102 being inspected and the apertureplate 122-13 of the housing.

Vacuum Operation, Calibration, and Particle Removal Operation withAperture Plate 122-13

[0366] Referring to FIGS. 1 and 57, during operation and/or calibration,a microvacuum chamber in the gap 198 between the aperture plate and theobject 102 or calibration structure 128 may be established in any of theways described earlier for the eight SPM probe 122-8 with the aperture132 and the gas bearing structure 342. As mentioned earlier for theeight and eleventh SPM probes 122-8 and 122-11, when a large vacuumchamber 194 and high capacity vacuum pump 193 are used the object 102may be effectively irradiated with the radiation produced by theradiation source 410 without colliding with other particles in the gap.

[0367] Furthermore, as also discussed earlier, the object 102 maycomprise a small free moving or partially constrained specimen, such asa micromachine or biological cell or material, and a flat specimensupport structure, such as microscope slide, on which the specimen islocated. Thus, the diameter of the aperture 132 and the annular outlet404 of the gas bearing structure 402 can be selected for a particularspecimen. As a result, the SPM system 100 may include multiple apertureplates with different diameter annular outlets and apertures fordifferent types of objects that are to be inspected or modified. In thisway, each aperture plate is a detachable portion of the housing 154 sothat the housing can be fitted with different size annular outlets andapertures.

[0368] In addition, the particle removal structure 342 removes particlesduring operation and/or calibration in the manner described earlier forthe fifth SPM probe 122-5. And, in an alternative embodiment, theaperture plate 122-13 may include gap sensors 164 like that describedearlier for the eight SPM probe 122-8 rather than the gas bearingstructure 402.

[0369] Referring to FIGS. 11 and 52, in the case where the radiationsource provides electromagnetic energy or charged particles, theposition of the radiation source 410 can be calibrated using one or moreof the radiation detection devices 460 in the same manner as thatdiscussed for the first, eight, eleventh, and seventeenth SPM probes122-1, 122-8, 122-11, and 122-17. In the specific case where theradiation source provides xrays, each of these radiation detectiondevices could include a thin metal window 469 on the aperture structure466 and over the aperture. The metal window is used to block (or absorb)extraneous charged particles and to block very low energy electrons,x-rays and all other electromagnetic energy of lower wavelength far UVthrough radio waves.

[0370] Furthermore, In the case where the radiation source providescharged particles, its position can also be calibrated using one or moreof the radiation detection devices 461 in the manner discussed earlierfor the eight and eleventh SPM probes. And, the reference materials 188,189, and 458 could be used in the respective specific cases where theradiation source provides electrons, light, and ions.

Structure of SPM Probes 122-14 and 122-15

[0371] Turning now to FIG. 58, there is shown an embodiment for afourteenth microstructured SPM probe 122-14 and a fifteenthmicrostructured SPM probe 122-15. These probes are used to make SPMmeasurements of the object 102 that are radiation measurements made withthe radiation detection tools 500 and 501 of respectively the fourteenthand fifteenth probes. The fourteenth and fifteenth probes each includean aperture 132 and gap sensors 164 that are formed in the base 130 ofthe probe in the manner described earlier for the first SPM probe 122-1.The base 130 has the same basic shape and construction as was describedearlier for the first probe.

[0372] Referring to FIG. 59, each radiation detection tool 500 and 501includes a support platform 502, such as a cantilever, that is suspendedin the corresponding aperture 132 of the tool. The support platform isconnected to the corresponding inner perimeter surface 134 of the base130 of the SPM probe 122-14 or 122-15 so that the tool is between theupper and lower surfaces 140 and 142 of the probe. The support platformmay be separately formed or may be an integral portion of the base. Eachradiation detection tool further includes an insulating plate 504 on thesupport platform that comprises an insulating material, such as silicondioxide. The radiation detection tools 500 and 501 are constructed likethe radiation detection devices 460 and 461 of the calibration structure128-2, except that their respective radiation detectors 463 and 464 areformed on the insulating plate and their aperture structure is formed onthe support platform.

Probe Loading and Unloading, Calibration, Vacuum Operation, and ParticleRemoval Operation of SPM Probes 122-14 and 122-15

[0373] Referring to FIG. 60, the fourteenth and fifteenth SPM probes122-14 and 122-15 may each be loaded onto and unloaded from one of thescanning heads 120 in the same ways as were described earlier for thefirst SPM probe 122-1. And, each radiation detection tool 500 and 501may have its profile examined in the manner discussed earlier for thefirst probe. Furthermore, optical images would be produced by theimaging optics 226 during operation and/or calibration of each of thefourteenth, fifteenth, and sixteenth probes in the manner discussedearlier for the first probe. During operation and/or calibration of eachof the fourteenth, fifteenth, and sixteenth probes, a microvacuumchamber in the gap 198 between the probe and the object 102 orcalibration structure 128 may be established in any of the waysdescribed earlier for the first probe with the aperture 132 and the gapsensors 164 of the probe. Or, the fourteenth, fifteenth, and sixteenthprobes may each include instead a gas bearing structure 342 like thatdescribed earlier for the eight SPM probe 122-8. Finally, thefourteenth, fifteenth, and sixteenth probes could each also include aparticle removal structure 342 to remove particles during operationand/or calibration in the manner described earlier for the fifth SPMprobe 122-5.

Inspections with SPM Probes 122-14 and 122-15

[0374] Referring to FIG. 60, the other components 123 of the SPM system100 may include a radiation source 512 and a radiation measurementcircuit 514. The radiation source provides radiation. This radiation maybe electromagnetic energy, like visible light, ultraviolet light,infrared light, xrays, gamma rays, and/or radio frequency waves, and/orcharged particles, like ions, electrons, protons, and/or alphaparticles. Alternatively, the radiation source may be in the form oflight emitted by the SPM probe 122-17 in the manner discussed later.

[0375] Referring again to FIG. 1, in order to inspect the object 102using one of the radiation detection tools 500 or 501 of one of the SPMprobes 122-14 or 122-15, the controller 114 controls the positioningsystem 103 to position the probe for a scan of the object 102. Turningto FIGS. 58 to 60, at each scan point, the controller causes theradiation source 512 or the SPM probe 122-17 to produce radiation thatis directed at the object. The resulting radiation that passes throughthe aperture 132 of the radiation detection tool is detected by theradiation detector 463 or 464 of the tool. The radiation measurementcircuit makes a measurement of the detected radiation and provides it tothe controller. This is done in the same manner as was described earlierfor the radiation detection devices 460 or 461 depending on the kind ofradiation that is detected. Furthermore, the radiation measurementcircuit also grounds the aperture structure 466 to block extraneousradiation.

[0376] The selected radiation detection tool 500 or 501 of one of theSPM probes 122-14 or 122-15 may be used to detect radiation reflectedand/or emitted by the object 102. In this case, the probe and theradiation source 512 or the SPM probe 122-17 would be positioned abovethe object. The controller 114 may then make an image and/or analysis ofthe object or a patterned image or analysis of the radiation reflectedby the object with the measurements received from the radiationmeasurement circuit 514. This may be particularly useful for inspectinga lithographic structure, such as a semiconductor fabrication mask. Inthis case, the controller may generate a patterned image of theradiation reflected by it and to which a replicable structure beingfabricated with the lithographic structure would not be exposed (i.e.,would be masked from).

[0377] Alternatively, the selected radiation detection tool 500 or 501may be used to detect radiation that passes through the object 102. Inthis case, the SPM probe 122-14 or 122-15 would be positioned above theobject and the radiation source 512 or the SPM probe 122-17 would bepositioned below it. The controller 114 would then make a patternedimage or analysis of the radiation that the object projects (i.e.,allows to pass through it) from the measurements received from theradiation measurement circuit 514. This also may be useful forinspecting a lithographic structure by generating a patterned image ofthe radiation which a replicable structure would be exposed to by thelithographic structure.

Calibration of SPM Probes 122-14 and 122-15

[0378] The position of the radiation detection tools 500 and 501 of theSPM probes 122-14 and 122-15 may be calibrated and their profilesexamined using the AFM probe 131 and SEM probe 133 of the calibrationstructure 128-1. This would be done in the manner discussed earlier forthe first SPM probe 122-1.

[0379] Referring to FIG. 60, the other components 123 of the SPM system100 may further include a radiation beam source 516 that is located atprecisely known location with respect to the reference location of theSPM system. This radiation beam source may also be used in calibratingthe position of a selected radiation detection tool 500 or 501 of one ofthe SPM probes 122-14 or 122-15.

[0380] Specifically, referring again to FIG. 1, the controller 114calibrates the position of the selected particle detection tool 500 or501 by controlling the positioning system 103 to attempt to position thetool over the radiation beam source 516. Then, turning again to FIG. 60,the controller causes the radiation beam source to produce a radiationbeam. The radiation beam may comprise a charged particle beam, such asan e-beam, ion beam, proton beam or alpha particle beam, or anelectromagnetic energy beam, such as a visible light beam, ultravioletlight beam, infrared light beam, gamma ray beam, xray beam, or radiofrequency beam. The controller analyses the measurement received fromthe radiation measurement circuit 514 to determine if the radiation beamis being detected by the radiation detection tool so that the radiationdetection tool is positioned over the radiation beam source. Thus, in aclosed feedback loop, the radiation detection tool is positioned, theradiation beam is produced, and the measurement from the energymeasurement circuit is analyzed until it is determined by the controllerthat the radiation detection tool is in fact positioned over theradiation beam source. Once this occurs, a positional offset is computedand the precise positioning of the radiation detection tool with respectto the reference location is then calibrated based on the positionaloffset in the manner described earlier.

Structure of SPM Probe 122-16

[0381] Turning now to FIG. 61, there is shown an embodiment for asixteenth microstructured SPM probe 122-16 for use in making SPMmeasurements of the object 102 which are radiation measurements. Thesixteenth probe is constructed like the fourteenth SPM probe 122-14,except that the radiation detection tools 500 are replaced by theradiation detection tools 520.

[0382] Referring to FIGS. 62 and 63, each radiation detection tool 520includes a support platform 502 that is suspended in the correspondingaperture 132 of the tool, as was described for each radiation detectiontool 500. However, here, each radiation detection tool includes a tip518 on the support platform. Formed in the tip, is a semiconductorradiation detector 524.

[0383] In the embodiment of FIG. 62, the radiation detector comprises aradiation sensitive semiconductor junction diode that is formed in thetip 518. The core material 144 of the tip comprises a semiconductormaterial, such as silicon. The junction diode comprises an uppersemiconductor region 528 in the core material that is doped to be N or Ptype. It also includes a lower semiconductor region 530 in the sharp endof the core material that is oppositely doped P or N type to that of theupper semiconductor region. The lower and upper semiconductor regionsare doped using conventional techniques known to those skilled in theart and in the manner described in “Semiconductor Detectors” referencedearlier so that electromagnetic energy and/or charged particles can bedetected by the radiation detector.

[0384] An insulating coating is formed over the core material and etchedto provide the junction diode with insulating regions 532 and contactareas for conductive contact regions 534 of each radiation detector 524.The entire tip is coated with a conductive coating, such as tungsten,gold, aluminum, or indium tin oxide or silicon carbide, carbon nitride,or diamond that is doped to be conductive in the manner describedearlier. This conductive coating is then etched to form the conductivecontact regions which each contact a corresponding one of the upper andlower semiconductor regions. In doing so, the conductive coating may beremoved or rubbed off from the sharp end of the tip. Or, if theconductive coating is a sufficiently light, it may pass an adequateamount of radiation without being removed. Moreover, if the conductivecoating is transparent to radiation, such as silicon carbide, carbonnitride, or diamond, then it need not be removed at all and can alsoserve as an obdurate coating for the tip. And, in the case where theconductive coating is not an obdurate material, such as gold, aluminum,indium tin oxide, or tungsten, each radiation detector 524 may includean additional obdurate coating 538, like silicon carbide, carbonnitride, diamond like carbon, or diamond, that would be deposited overthe entire tip. This is done in the manner described earlier for thefirst to third SPM probes 122-1 to 122-3. But, this obdurate coating isthin enough to be transparent to the radiation directed at the tip. As aresult, a radiation sensitive PN or NP junction diode is formed. Thistype of radiation detector is further described in U.S. patentapplication Ser. Nos. 08/906,602 and 08/776,361 referenced earlier.

[0385] Referring to FIG. 63, in alternative embodiment, thesemiconductor radiation detector 524 comprises a radiation sensitivejunction transistor that is formed in the tip 518. In this case, thejunction transistor includes a semiconductor base region 527, asemiconductor collector region 529, and a semiconductor emitter region529 in the core material 144. The base, collector, and emitter regionsrespectively form the base, collector, and emitter of the junctiontransistor. The base region is oppositely doped N or P type from the Por N type doping of the collector and emitter regions. And, the base,collector, and emitter regions are each contacted by a corresponding oneof the contact regions 534 that are formed between the insulatingregions 532. This results in the tip having a radiation sensitive PNP orNPN junction transistor for detecting radiation directed at the tip.Otherwise, the radiation detector is constructed in the same manner asthat described for the embodiment of FIG. 62.

Probe Loading and Unloading, Calibration, Inspection Operation, VacuumOperation, and Particle Removal Operation of SPM Probe 122-16

[0386] The sixteenth SPM probe 122-16 may be loaded onto and unloadedfrom one of the scanning heads 120 in the same ways as were describedearlier for the first SPM probe 122-1. And, the tip 518 of each of theradiation detection tool 520 may be activated, deactivated, and have itsposition calibrated and profile examined in the ways described earlierfor the first probe, except that its position would not be calibratedusing STM and radiation measurements. Moreover, these tools (and theirtips) may have their positions calibrated and may be used to detectradiation in the same manner as was described earlier for the radiationdetection tools 500 for the fourteenth SPM probe 122-14. And, opticalimages would be produced by the imaging optics 226 during operationand/or calibration of the sixteenth probe in the manner discussedearlier for the first probe. During operation and/or calibration of thesixteenth probe, a microvacuum chamber in the gap 198 between the probeand the object 102 or calibration structure 128 may be established inany of the ways described earlier for the first probe with the aperture132 and the gap sensors 164 of the probe. Or, the sixteenth probe mayinclude instead a gas bearing structure 342 like that described earlierfor the eight SPM probe 122-8. Finally, the sixteenth probe could alsoinclude a particle removal structure 342 to remove particles duringoperation and/or calibration in the manner described earlier for thefifth SPM probe 122-5.

SPM Modifications with SPM Probe 122-16

[0387] As mentioned earlier, the radiation detector 524 of eachradiation detector tool 520 of the SPM Probe 122-16 may comprise anobdurate coating 534 or 538 on the tip 518 of the tool. Thus, such aradiation detector may be formed in the tips 138, 238, and 320 of thefirst, second, and fifth to seventh SPM probes 122-1, 122-2, and 122-5to 122-7. In this case, these tips could be used not only to modify theobject in the manner described earlier, but could also be used toinspect the object 102 and have their positions calibrated in the samemanner as was just described. In addition, since this radiation detectoris photosensitive (i.e., sensitive to visible light), they could be usedto detect the buildup of opaque debri particles on the tips. These debriparticles comprise particulate material removed from the object duringthe modifications performed with the tips.

[0388] Specifically, this would be done by monitoring the visible lightdetected by the radiation detector 524 in the tip 138, 238, or 320 withthe energy measurement circuit 514. When, the radiation detector noloner detects a certain predefined threshold of visible light, thismeans too many debri particles have been accumulated on the surface ofthe tip. Then, another tip of the corresponding SPM probe 122-1, 122-2,122-5, 122-6, or 122-7 is used, the tip is cleaned, or the probe isdiscarded in the manner discussed earlier.

Structure of SPM Probe 122-17

[0389] Turning now to FIG. 64, there is shown a seventeenthmicrostructured SPM probe 122-17 for use in making SPM measurements ofthe object 102. Here, the SPM measurements are radiation measurementsmade in response to radiation directed at the object which is in theform of light. To do so, the seventeenth probe includes light emissiontools 540 to direct the light at the object. Each light emission tool issuspended in a corresponding aperture 132. The seventeenth probe alsohas gap sensors 164 like the first SPM probe 122-1 and a base 130 thatis constructed and has the same shape like that of the first probe.

[0390] As shown in FIG. 65, each light emission tool 540 comprises asupport platform 502 like each radiation detection tool 520. However,each light emission tool comprises a tip 542 that emits light. The corematerial 144 of the tip comprises a semiconductor material, such assilicon. The core material is coated with an emissive coating 544 at athickness of approximately 10 to 200 nanometers. This emissive coatingmay comprise gallium nitride, gallium arsenide, or silicon carbide whichis suitably doped to be emissive. A conductive coating 534 is depositedover the emissive coating and has a thickness of approximately 20 to 200nanometers. This conductive coating may be tungsten, gold, aluminum, orindium tin oxide or silicon carbide, carbon nitride, or diamond that isdoped to be conductive in the manner described earlier. About 5 to 10nanometers of the conductive coating at the sharp end of the tip may bemade sufficiently thin so that it is transparent to blue and/or UV lightor can be removed or rubbed off from the sharp end of the write tip.This forms an aperture at the sharp end of the tip with a diameter inthe range of approximately 5 to 100 nanometers.

[0391] The other components 123 of the SPM system 100 may include alight emission control circuit 548. When a voltage of about 4 volts isapplied across the conductive coating and core material by the lightemission control circuit, blue (e.g., 423 nanometer wavelength) and/orultraviolet (UV) light (e.g., 372 nanometer wavelength) is emitted bythe emissive coating as described in “Deposition, Characterization, andDevice Development in Diamond, Silicon Carbide, and Gallium Nitride ThinFilms” referenced earlier. The light propagates through the corematerial until it is emitted at the aperture. The aperture has adiameter substantially smaller than the wavelength of the light.

[0392] Additionally, in the case where the conductive coating is not anobdurate material, such as conductive diamond, silicon carbide, orcarbon nitride, the tip may also include an obdurate coating 538 of thekind described earlier for the tip 518 of the radiation detection tool520 of FIG. 62. Furthermore, the light emission tool 540 of theembodiment of FIG. 65 is further described in the U.S. patentapplication Ser. Nos. 08/906,602, 08/776,361, and 08/506,516 and PCTPatent Application No. PCT/US96/12255 referenced earlier.

[0393] In an alternative embodiment shown in FIG. 66, the core materialof each tip 542 of each light emission tool 540 is comprised of silicon.The lower region 547 of the core material at the sharp end of the tip isporous. This is accomplished by immersing the core material of the tipin a dilute solution of Hydrofluoric acid or a dilute solutionHydrofluoric and Nitric acid and operating the tip as an anode. Inaddition, a gold or platinum cathode is also immersed in the solution. Acurrent is then produced between the anode and cathode which issufficient to porously etch the lower region of the core material at thesharp end of the tip but leave the upper region 549 of the core materialunetched. The insulating regions 532 and the contact regions 534 of thetip are then formed. This is done in the same manner as discussedearlier for the tip 518 of the embodiment of the radiation detectiontool 520 of FIG. 62. To form an aperture at the sharp end of the tip,about 5 to 10 nanometers of the contact region at the sharp end may bemade sufficiently thin so that it is transparent to light or can beremoved or rubbed off from the sharp end of the tip. Thus, when avoltage is applied across the conductive coating and core material ofeach tip by the light emission light control circuit 548, a current isproduced in the porous lower region which causes it to emit lightthrough the aperture of the tip.

[0394] In the case where the conductive coating is not an obduratematerial, such as conductive diamond, silicon carbide, or carbonnitride, the tip 542 may also include an obdurate coating 538 of thekind described earlier for the tip 518 of the radiation detection tool520 of FIG. 62. The light emission tool 540 of the embodiment of FIG. 66is further described in U.S. patent application Ser. No. 08/506,516 andPCT Patent Application No. PCT/US96/12255 referenced earlier.Furthermore, light emission by porous silicon is further described in AnImproved Fabrication Technique for Porous Silicon, Review of ScientificInstruments, v64, m2 507-509 (1993), Photoluminescence Properties ofPorous Silicon Prepared by Electrochemical Etching of Si EpitaxialLayer, Act. Physics Polonica A, v89, n4, 713-716 (1993), Effects ofElectrochemical Treatments on the Photoluminescence from Porous Silicon,Journal of the Electrochemical Society, v139, n9, L86-L88 (1992),Influence of the Formation Conditions on the Microstructure of PorousSilicon Layers studied by Spectroscopic Ellipsometry. Thin Solid Films,v255, n1-2; 5-8 (1995), and Formation Mechanism of Porous Si LayersObtained by Anodization of Mono-Crystalline N-type Si in HF Solution andPhotovoltaic Response in Electrochemically Prepared Porous Si, SolarEnergy Materials and Solar Cells, v26, n4, 277-283, which are herebyexplicitly incorporated by reference.

[0395] Additionally, referring to FIG. 67, the seventeenth probeincludes a corresponding vacuum pump 424 formed in the base 130 of theprobe for each light emission tool 540. This vacuum pump is formed likethat described earlier for the fluid delivery tools 414 of the ninth SPMprobe 122-9, except that it includes an outlet valve 560 instead of thecheck valve 430. As will be described in greater detail later, thevacuum pump is used to create a microvacuum chamber in the gap 198between the upper surface 166 of the object 102 and the lower surface142 of the base of the seventeenth probe. In an alternative embodiment,one vacuum pump could be used for all of the light emission tools.

[0396] The outlet valve 560 is disposed between the pumping chamber 428and the outlet 426. The outlet valve includes a sealing plate 562 thatextends across the outlet and floats between the stops 564 and thesealing seats 566 of the outlet valve that are formed in the base 130.The outlet valve further includes sealing arms 568 that extend out fromthe sealing plate. The sealing plate and the sealing arms may beintegrally formed together. The outlet valve also includes an insulatingplate 570 on the inner surface of the outlet and plate electrodes 572 onthe insulating plate. The plate electrode may comprise a conductivematerial, such as polysilicon or tungsten, and the insulating plate maycomprise an insulating material, such as silicon dioxide. The sealingplate may be integrally formed with the base and comprises a conductivesemiconductor material. Thus, in order to close the outlet valve, thepumping control circuit 444 applies an appropriate voltage across thesealing seats and the plate electrodes. This causes the sealing plate tomove toward the sealing seats so that the sealing arms are seatedagainst the sealing seats. This seals the pumping chamber from theoutlet. As those skilled in the art will recognize, the valve justdescribed may be used in the SPM probes 122-9 to 122-12 in place of thecheck valve 430.

[0397] Each light emission tool 540 further includes an inlet duct 422that connects the aperture 132 and the inlet 425 of the pump 424. Inthis way, the pump and the aperture are in fluid communication so thatthe pump can create a microvacuum chamber in the gap between the objectand the base 130 of the seventeenth SPM probe 122-17.

[0398] In addition, the support platform 502 of each light emission tool540 is connected to the base 130 of the SPM probe 122-12 and suspendedin the aperture 132 of the base within the corresponding inner perimetersurface 134 of the base. This is done so that the tip 542 of the lightemission tool is kept between the lower and upper surfaces 142 and 140of the base while not in operation to prevent it from being damaged. Thesupport platform may be separately formed or may be an integral portionof the base. Each light described earlier for the gap sensors 164 of thefirst SPM probe 122-1 to actuate the tip of the light emission tool foroperation.

Probe Loading and Unloading, Tip Activation and Deactivation,Calibration, and Particle Removal Operation of SPM Probe 122-17

[0399] Referring to FIG. 67, the seventeenth SPM probe 122-17 may beloaded onto and unloaded from one of the scanning heads 120 in the sameways as were described earlier for the first SPM probe 122-1. And, thetip 542 of each of the light emission tools 540 may have its positioncalibrated and profile examined in the ways described earlier for thefirst probe, except that STM and radiation measurements would not beused to calibrate its position. The activation and deactivation of thetip may be done using the tip actuator 162 and deflection sensor 161 andthe tip activation control circuit 176. The tip activation controlcircuit operates under the control of the controller 114 and like thegap control circuit 176 described earlier in activating the tip andsensing deflection of the cantilever 502. Moreover, the position of thetip may be calibrated using the radiation detectors 460 and thereference materials 189 of the calibration structure 128-2 in the samemanner as was described earlier for the SPM tools 137 of the first SPMprobe 122-8. Furthermore, optical images would be produced by theimaging optics 226 during operation and/or calibration of the sixteenthprobe in the manner discussed earlier for the first probe. Finally, theseventeenth probe could also include a particle removal structure 342 toremove particles during operation and/or calibration in the mannerdescribed earlier for the fifth SPM probe 122-5.

Vacuum Operation of SPM Probe 122-17

[0400] Still referring to FIG. 67, during operation and/or calibrationof the seventeenth SPM probe 122-7, a microvacuum chamber in the gap 198between the lower surface 142 of the base 130 of the probe and the uppersurface 166 of the object 102 or calibration structure 128 may beestablished using the vacuum pump 424 in the base. In order to do so, ateach scan point, the controller 114 first controls the pumping controlcircuit 444 to close the outlet valve 560 in the manner describedearlier. Then, the controller controls the pumping control circuit tocause the pump to pump the ambient gas that is in the gap into thepumping chamber 428. In doing so, the pumping chamber is expanded sothat the ambient gas is drawn into the aperture 132, through the duct422, and into the pumping chamber 428 via the inlet 425. This is done inthe same way as was described earlier for pumping fluid material intothe pumping chamber of a pipette tool 446 of the SPM probe 122-10.

[0401] Then, at each scan point after the pumping chamber 428 is filledwith ambient gas, the controller 114 causes the ambient fluid in thepumping chamber to be pumped out of the outlet 426. This is done byfirst controlling the pumping control circuit 444 to open the outletvalve 560 in the manner discussed earlier. Then, the controller controlsthe pumping control circuit to cause the pumping chamber to contractback to its normal volume. In other words, a suitable voltage is appliedacross the membrane 440 and the plate electrode 442 so that the membraneis returned to its normal position. This increases the pressure of theambient gas in the pumping chamber so that it travels through the outletvalve and out of the outlet 426.

[0402] Additionally, this is done under the same conditions andassumptions as was described earlier for the SPM probe 122-1 forcreating such a microvacuum chamber. Moreover, referring to FIG. 64, thegap sensors 164 are used in the same manner as was described earlier inorder to set the appropriate width of the gap.

[0403] Alternatively, the microvacuum chamber in the gap 198 may beestablished in any of the ways described earlier for the first SPM probe122-1. Or, the seventeenth probe may include instead a gas bearingstructure 342 like that described earlier for the eighth SPM probe122-8. Conversely, the vacuum pump 424 could be used in any of the otherSPM probes 122-1 to 122-16 and 122-18 described herein to create such amicrovacuum chamber.

Inspections with SPM Probe 122-17

[0404] Referring again to FIG. 1, in order to inspect the object 102using a selected light emission tool 540 of the SPM probe 122-17, thecontroller 114 controls the positioning system 103 to position the probefor a scan of the object 102. Turning to FIGS. 64 to 67, at each scanpoint, the controller controls the light emission control circuit 548 tocause the light emission tool to produce light that is directed at theobject in the manner just discussed. The energy measurement system 389or one of the SPM probes 122-14,122-15 and 122-16 then makes ameasurement of the radiation that is reflected and/or emitted by theobject or the light that is projected by the object in response to thisproduced light. This radiation measurement may be an NSOM measurement ofthe kind described earlier for the SPM probe 122-1. Moreover, theradiation measurements that are collected may be used to generate ananalysis or a patterned image of the radiation reflected by the objector the light projected by the object in the manner discussed earlier forthe radiation detection tools 500, 501, and 520 for the SPM probes122-14,122-15 and 122-16.

SPM Inspections and Modifications with SPM Probe 122-17

[0405] As mentioned earlier, each light emission tool 540 of the SPMProbe 122-17 may comprise an obdurate coating 534 or 538 on the tip 542of the tool. Thus, this tip could be used like one of the tips 138,238,and 320 of the SPM probes 122-1, 122-2, and 122-5 to 122-7 for modifyingthe object in the manner described earlier for the SPM probes 122-1,122-2, and 122-5 to 122-7. But, it could also be used to inspect theobject 102 in the manner described for the SPM probes 122-1 and 122-2.In this case, the deflection sensor 161 and the tip activation controlcircuit 176 would be used in the manner discussed earlier to sensedeflection of the cantilever 502 or 136 of the tools of these probes.Moreover, the cantilever deflection measurement system 205 describedearlier could be used if the light used is transparent to the base 130of the probe and the cantilever includes a reflective material, such asgold, tungsten, or aluminum, to reflect the light.

Structure of SPM Probe 122-18

[0406] Turning now to FIG. 68, there is shown an eighteenthmicrostructured SPM probe 122-18 for use in making SPM modifications tothe object 102. Here, the eighteenth probe includes heater tools 550 toheat the object. Each heater tool is suspended in a correspondingaperture 132. Otherwise, the eighteenth probe is constructed like thefirst SPM probe 122-1.

[0407] Referring to FIG. 69, each heater tool 550 includes a supportplatform 502, such as a cantilever, like the radiation detection tools520 of the SPM probe 122-16. On the support platform is a tip 552. Thecore material 144 of the tip is coated with a resistive coating 554,such as Nichrome, Tungsten, or doped Silicon. Thus, when a voltage isapplied across the resistive coating by the heater control circuit 556,the resistive coating generates heat which can be used to heat theobject 102. The heater control circuit is one of the other components123 of the SPM system 100.

Probe Loading and Unloading, Tip Activation and Deactivation,Calibration, Vacuum Operation, and Particle Removal Operation of SPMProbe 122-18

[0408] Referring to FIG. 70, the eighteenth SPM probe 122-18 may beloaded onto and unloaded from one of the scanning heads 120 in the sameways as were described earlier for the first SPM probe 122-1. And, thetip 552 of each of the heater tools 550 may be activated, deactivated,and have its position calibrated and profile examined in the waysdescribed earlier for the first probe, except that radiationmeasurements would not be used to calibrate its position. Furthermore,optical images would be produced by the imaging optics 226 duringoperation and/or calibration of the eighteenth probe in the mannerdiscussed earlier for the first probe. During operation and/orcalibration, a microvacuum chamber in the gap 198 between the eighteenthprobe and the object 102 or calibration structure 128 may be establishedin any of the ways described earlier for the first probe with theapertures 132 and the gap sensors 164 of the eighteenth probe or withthe vacuum pump 424 of the seventeenth SPM probe 122-17. Finally, theeighteenth probe could also include a particle removal structure 342 toremove particles during operation and/or calibration in the mannerdescribed earlier for the fifth SPM probe 122-5.

SPM Modifications with SPM Probe 122-18

[0409] Referring again to FIG. 1, as mentioned earlier, the SPM probe122-18 may be used to modify the object 102. This is done by heating thematerial of the object to plastically deform it, chemically change itchange its crystalline state, or weld it and another material together.In doing so, the controller 114 controls the positioning system 103 toperform a scan of the object. At each scan point, the controllercontrols the positioning system to lower the activated tip 552 of aselected heating tool 550 of the probe to a target area of the object.Then, referring to FIG. 70, the controller controls the heating controlcircuit 556 to cause the tip 552 to heat the object in the mannerdiscussed earlier.

Other SPM Probes 122

[0410] Referring back to FIG. 1, the SPM system 100 may also includeother conventional SPM probes 122 to make SPM modifications and/or SPMmeasurements. For example, these probes may include a conventional MAFM(magnetic AFM) probe, a conventional LAFM (lateral AFM) probe, anelectrical field strength probe used to respectively detect the magneticfield strength, the lateral force, and the electric field strength ofthe object at each scan point of a scan of the object controlled by thecontroller 114. In this case, the other components 123 of the SPM systemwould Include an MAFM measurement circuit, an LAFM measurement circuit,and an electric field measurement circuit that respectively provideMAFM, LAFM, and electric field strength measurements of the magneticfield strength, the lateral force, and the electric field strength tothe controller at each scan point.

[0411] Such an SPM probe 122 would be constructed similar to thatdescribed for the first SPM probe 122-1 and may be loaded onto andunloaded from one of the scanning heads 120 in the same ways as weredescribed earlier for the first probe. And, this probe may have itsposition calibrated and profile examined in the ways described earlierfor the first probe. Furthermore, optical images would be produced bythe imaging optics 226 during operation and/or calibration of this probein the manner discussed earlier for the first probe. During operationand/or calibration, a microvacuum chamber in the gap 198 between thisprobe and the object 102 or calibration structure 128 may be establishedin any of the ways described earlier for the first probe with apertures132 and gap sensors 164 or with the vacuum pump 424 of the seventeenthSPM probe 122-17. Finally, this probe could also include a particleremoval structure 342 to remove particles during operation and/orcalibration in the manner described earlier for the fifth SPM probe122-5.

[0412] In addition, in the case of an MAFM probe, the probe would beparticular useful in performing precision repairs and/or fabricationsteps of a thin film magnetic read/write head or other magneticstructure. In particular, the magnetic properties of a gap (or groove)between the write and/or read poles of the thin film magnetic materialcan be precisely characterized (i.e., measured) using this probe. Thus,this gap may be formed and/or repaired in an iterative process usingthis SPM probe to measure the magnetic field strength of the gap atdifferent scan points during each iteration and using the SPM probes122-5 to 122-7 described earlier to physically form and/or modify thegap during each iteration. This is repeated until the desired magneticproperties of the gap are achieved.

Alternative Embodiments for SPM System 100

[0413] Referring to FIG. 71, there is shown another embodiment of theSPM inspection and/or modification system 100. As with the earlierembodiment of FIG. 1, the system includes a controller 114, one or morescanning heads 120, and a positioning or movement system 103 for movingthe scanning heads and the object 102 with respect to each other.

[0414] As shown in FIG. 72, the movement system 103 includes a supportstructure 600. Each scanning head 120 is fixed to the support structurewith a corresponding support arm 602 of the movement system. The object102 is mounted to a motor 604 of the movement system which is itselfmounted to the support structure. The motor rotates the object 102 underthe control of the controller 114 so that the object rotates through thescanning heads.

[0415] In this embodiment, each scanning head 120 includes one or morematching surfaces 142 that are correspondingly shaped to match the outersurfaces 166 of the object 102. Furthermore, each scanning head mayinclude one of the SPM probes 122-1 to 122-18 described earlier. Thisprobe is embedded, mounted, or loaded in the scanning head and providesat least one of the matching surfaces of the scanning head.

[0416] Each scanning head 120 also includes an internal chamber 135. Asin the earlier embodiment of FIG. 1, the internal chamber is connectedto the fluid system 344 of the inspection and/or modification system 100via the corresponding tubes 345. Each tube is connected to a gas orvacuum source of the fluid system via a corresponding valve 345 of thefluid system.

[0417] As indicated previously, each of the SPM probes 122-1 to 122-18includes an aperture 132. This aperture is connected to and in fluidcommunication with the internal chamber 135 of the scanning head 120. Inaddition, the aperture forms an aperture in one of the matching surfaces142. Thus, a microdifferential pressure zone can be formed in the gap198 between the outer surfaces 166 of the object 602 and the matchingsurfaces 142 of the scanning head in a similar manner to that describedearlier for SPM probe 122-1.

[0418] Specifically, in order to do so, the controller 114 causes thevalve 345 that is connected to a corresponding tube 346 which isconnected to the internal pressure chamber 135 to be opened. As aresult, the aperture 132 is in fluid communication with the gas orvacuum source of the fluid system 344 via the corresponding tube and theinternal pressure chamber. This causes a microdifferential pressurechamber to be formed in the gap 198 in the manner discussed earlier forthe SPM probe 122-1 under the conditions specified.

[0419] The inspection and/or modification system 100 may be used in avariety of applications. As mentioned earlier, this may be done in orderto modify and/or inspect the object in any of the ways discussed earlierwith the SPM probes 122-1 to 122-18. In order to do so, the system mayinclude other components 123 like the embodiment of FIG. 1.

[0420] For example, material may be deposited on the object 102. In thiscase, one scanning head 120 may include the SPM probe 122-12. Thecontroller 114 first causes a microvacuum chamber to be created in thegap 198 between the surfaces 166 and 142 of the object and the scanninghead. This is done in the manner just described. Then, the controller114 the causes the object to be rotated through the scanning head andcauses the probe to deposit material on the object in a desired locationin the manner discussed earlier using a vacuum arc tool 470 of theprobe.

[0421] Referring back to FIG. 71, in the case where DLC is deposited onthe object 102, an additional scanning head 120 could be used for CVD(i.e., chemical vapor deposition) deposition of diamond on the object.In this case, the scanning head simply includes the aperture plate122-13 described earlier. The aperture plate would be used to growdiamond crsytals at the DLC seed sites in the manner described earlierfor the SPM probe 122-12. In this case, the other components 123 of thesystem would include a magnetic macroparticle filter.

[0422] Thus, referring again to FIG. 72, the controller causes a valve345 that is connected to a tube 346 which is connected to the internalchamber 135 of the scanning head 120 to be opened. As a result, theaperture 132 is in fluid communication with a gas source of the fluidsystem 344 that provides methane and hydrogen or methane and argon.These gases are introduced into the internal chamber and then flowthrough the aperture and into the differential pressure chamber causedin the gap 198. These gases flow out of the annular outlet 404 of theaperture plate to a gas sink of the fluid system via a correspondingtube 346. The controller 114 then causes the object to be rotatedthrough the scanning head and controls the heater circuit 466 to causethe heater 467 to heat the gases. As mentioned earlier, the heater maycomprise resistive or inductive heating elements 471 located at thesurfaces 142 of the scanning head or an external laser or flame sourcethat is one of the other components 123 of the inspection and/ormodification system. As a result, CVD deposition of diamond occurs onthe object such that polycrystalline diamond is grown at the seed sitesprovided by the DLC.

[0423] Furthermore, referring again to FIG. 71, an additional scanninghead 120 could be used for inspecting the object before or after thedeposition of the material on the object 102. Referring to FIG. 72, forexample, the scanning head 120 may include the SPM probe 122-8 discussedearlier. The controller 114 would then cause SEM measurements of theobject to be made using the e-beam tool 382 of this probe in the mannerdiscussed earlier. These SEM measurements would then be used by thecontroller to generate the kinds of inspection results mentionedearlier.

[0424] Then, referring again to FIG. 71, another scanning head 120 couldbe used to make modifications to the object 102 based on the inspectionresults. Turning to FIG. 72, this scanning head could include the SPMprobe 122-5 mentioned earlier. The controller 114 would then cause cutsto be made in the object with a cutting tool 350 of the probe in orderto remove portions of the unwanted material that was deposited.

[0425] Thus, in the embodiment shown in FIG. 72, a rotatable object 102,such as a circular saw blade or rock or concrete cutting blade, could becoated with material in the manner just discussed by rotating it throughone or more scanning heads 120. Thus, the inspection and/or modificationsystem 100 could be integrated into an entire saw or cutting systemwhere the movement system 103 is also used to rotate the blade fornormal operation in sawing or cutting another object. However, thoseskilled in the art will recognize that other embodiments also exist.

[0426] For example, the inspection and/or modification system 100 couldbe integrated into a band saw system. In this case, the movement system103 would normally rotate the band saw blade for sawing an object andwould also be used to move the band saw blade with respect to thescanning heads.

[0427] Alternatively, the movement system 103 may comprise a tape ordisk on which knife or razor blades could be mounted. The movementsystem would then rotate the tape or disk so that the knife or razorblades pass through the scanning heads.

[0428] Referring to FIG. 73, each scanning head 120 could compriseseparate stationary and moveable pieces 120-A and 120-B in order toprovide a differential pressure chamber for a complex shaped object 102,such as a wood saw blade. In this case, the stationary piece 120-A isfixed to the support structure 600 with the support arm 602. Themovement system further comprises an adjustable support arm 606. Thecontroller 114 causes the movement system 103 to move the object 102 inplace next to the stationary piece. It then causes the adjustablesupport arm to move the moveable piece 120-B so that it is locked inplace with the stationary piece around the object.

[0429] Finally, in the embodiment of FIG. 71, the scanning heads 120were shown as being separate. However, those skilled in the art willrecognize that such scanning heads may be integrated into one largescanning head with separate sections for performing desired inspectionsand/or modifications.

Software and Hardware of Controller 114 of SPM System 100

[0430] Turning now to FIG. 74, the controller 114 of the SPM system 100includes a CPU (central processing unit) 650, a memory 652, and the userinterface 116 discussed earlier. The user interface includes a display653, and user input devices 654, such as a mouse 656 and a keyboard 658.The memory stores an operating system 660, a scanning controller 662,and a GUI (graphical user interface) 664 that are all executed on theCPU. The operating system controls and coordinates execution of thescanning controller and the GUI in response to commands issued by a userwith the user input devices 654.

[0431] The scanning controller 662 controls the operation of the SPMsystem 100 in the manner discussed earlier. Specifically, it controlsthe making of the earlier described SPM measurements and SPMmodifications with the SPM probes 122 and the other components 123 ofthe SPM system. In doing so, the scanning controller collects the SPMmeasurements made and provides them as measurement data to the GUI 664for display on the display 653.

Controlling Positioning System to Create Drive Vectors in X, Y, and ZDimensions

[0432] The scanning controller 662 controls the operation of thepositioning system 103 shown in FIG. 1. In doing so, the scanningcontroller can individually drive the X, Y, and Z piezoelectric drivesof the rough positioning system 104 and can individually drive the X, Y,and Z piezoelectric drives of each fine positioning system 106.

[0433] In order to perform the SPM measurements of the kind describedearlier, the scanning controller 662 controls positioning of the SPMprobes 122-1 to 1224 and 122-8 to 122-18 that are used to make SPMmeasurements in the conventional way. This involves moving such a probefrom scan point to scan point with respect to the object 102 by onlydriving the positioning system 103 in one of the X, Y, and Z dimensionsat a time during the scan. Specifically, in order to position the tip ofsuch a probe, the positioning system is driven in only the X dimensionor only in the Y dimension in order to move from one scan point toanother scan point. Moreover, the positioning system is not driven inthe Z dimension simultaneously while it is driven in the X or Ydimension. Instead, the positioning system is under the servo (i.e.,feedback) control of the scanning controller in the Z dimension. As aresult, positioning of such a probe in the Z dimension is doneseparately at each scan point. This is typically done in order toprevent the tip of the probe from crashing into the object 102.

[0434] However, in order to perform the SPM modifications of the kinddescribed earlier where cutting or milling of the object is performed,the scanning controller 662 controls positioning of the SPM probes122-1, 122-2, and 122-5 to 122-7 that are used to make SPM measurementsin the conventional way. This involves moving such a probe with respectto the object 102 by driving the positioning system 103 in all three ofthe X, Y, and Z dimensions simultaneously to perform the cutting ormilling operation. Thus, the motion of the tip of such a probe can bedriven in a series of 3-D (three dimensional) vectors to pass throughthe loci of selected motion. This means that the entire cutting orpositioning motion of the tip of the probe can be a series of 3-Dvectors defining a larger 3-D vector, arc, curve, or surface.

[0435] This process is also applicable to performing the sweepingmotions described earlier for SPM probe 122-5. In this way, 2-D or 3-Dsweeping motions can be performed for sweeping away debris particlesthat are caused by modifications made with the SPM probes 122-1, 122-2,and 122-5 to 122-7.

Rendering Multiple Sets of Measurement Data as an Overlay Image

[0436] The GUI 664 may be used to render multiple sets of measurementdata together as a 3-D (three dimensional) overlay image on the display653. Each set of measurement data comprises SPM measurements of anobject 102 made with the SPM system 100. Each measurement comprises ameasurement data point that is three or more dimensional and includes acorresponding value for each dimension.

[0437] Specifically, each data point in the sets of measurement dataincludes X and Y coordinate values that represent respective locationsin perpendicular X and Y dimensions. These coordinate values togetherrepresent a corresponding location in an XY plane. Thus, the sets ofmeasurement data are related by the fact that they have data points withcommon coordinate values that represent common locations in the XYplane. Each data point in the sets of measurement data also includes ameasurement value that represents a measurement for a predefinedmeasurement parameter at the corresponding location in the XY plane. Themeasurement parameter is also considered as one of the dimensions ofeach data point.

[0438] The measurement parameter for the data points of one set ofmeasurement data may be different from the measurement parameter for thedata points of the other set of measurement data. For example, themeasurement parameter for one set of measurement data may be the heightof a selected object 102 while the measurement parameter for the otherset of measurement data may be the magnetic field strength, theelectrical field strength, or the material composition of the sameobject. Alternatively, the measurement parameter for the another set ofmeasurement data could be the height of a comparable object, such as amodified version of the selected object.

[0439] More specifically, one set of measurement data may comprise AFMmeasurement data for a selected object 102. In this case, each datapoint in the AFM measurement data includes X and Y coordinate valuesthat together represent a corresponding location in the XY plane of theobject. Each data point of the AFM measurement data also includes ameasurement value representing an AFM measurement of the height of theobject at the corresponding location in the XY plane. This height is inthe Z dimension that is perpendicular to the XY plane. Furthermore,these AFM measurements are made with one of the SPM probes 122-1 to122-4 in the manner discussed earlier. As is evident here, thepredefined measurement parameter for the data points of the AFMmeasurement data is the height of the object in the Z dimension.

[0440] Similarly, the another set of measurement data may comprise MAFMmeasurement data for the same object 102. Like the AFM measurement data,each data point in the MAFM measurement data includes X and Y coordinatevalues that together represent a corresponding location in the XY planeof the object. And, the measurement value of each data point of the AFMmeasurement data represents an MAFM measurement of the magnetic fieldstrength of the object at the corresponding location in the XY plane.This MAFM measurement is made with one of the conventional SPM probes122 in the manner discussed earlier. In this case, the predefinedmeasurement parameter for the data points of the MAFM measurement datais the magnetic field strength of the object.

[0441] In order to render the two sets of measurement data as an overlayimage on the display 653, the user first issues commands with one ormore of the user input devices 654 in order to select the surface imagegenerator 666 and the image overlay generator 668 of the GUI 664. Thesecommands are received by the CPU 650 and the operating system 660 inresponse causes the surface image generator, the image overlaygenerator, and a GUI controller 669 to be executed.

[0442] The GUI controller 669 of the GUI 664 generates control imagedata representing an interactive image of a control dialog box 689, asshown in FIGS. 75. This interactive image is displayed by the display653 in response to the control image data. The overlay image may berendered in several ways by the image overlay generator. Each of theseways may be selected by the user with one or more of the user inputdevices 654 using the interactive image of the control dialog box.

[0443] For example, the user may desire to have a first set ofmeasurement data and a second set of measurement data rendered as anoverlay image 690 as shown in FIGS. 75 and 76. Here, the overlay imageis of a first surface 692 representing the first set of measurement dataseparately overlaid on a second surface 692 representing the second setof measurement data or vice versa. Referring also to FIG. 74, the userof the SPM system 100 may use one of the input devices 654 to select theseparate surfaces image generator 670 of the image overlay generator 668in order to display the two sets of measurement data together in thisway.

[0444] The user does so by issuing corresponding commands with one ormore of the user input devices 654 using the image of the control dialogbox 689. For the each of the first and second surfaces 692 and 694,these commands include a command to select the surface in the activelayer selection box 696 of the control dialog box, a command to selectseparate surfaces in the separate surfaces box 695 of the control dialogbox, a command to select translucency or opacity (by not selectingtranslucency) for the surface in the translucency selection box 697 ofthe control dialog box, a command to select (or assigning) the surface'scolor mapping in the color map box 698 of the control dialog box, and acommand to select the amount of offset between this surface and theother surface in the offset box 700 of the control dialog box. Thesecommands are received by the CPU 650 and are in response provided to theGUI controller 669 which then passes them to the separate surfaces imagegenerator. The two sets of measurement data are then rendered by thesurface image generator 666 and the separate surfaces image generatorfor display on the display 653 in the manner shown in FIGS. 75 and 76.

[0445] In doing so, the surface image generator 666 generates a firstset of image data from the first set of measurement data and a secondset of image data from the second set of measurement data. The first andsecond sets of image data represent corresponding 3-D first and secondsurface images of the corresponding first and second surfaces 692 and694. Each surface extends along the XY plane and is contoured based onand to reflect the measurement values for the data points of thecorresponding measurement data that are perpindicular to the XY plane.Thus, each point of the corresponding surface is rendered from acorresponding data point of the measurement data.

[0446] For example, in the case where the first set of measurement datacomprises AFM measurement data the first surface comprises the physicalouter surface of the object 102. This physical outer surface extendsalong the XY plane and is contoured based on and to reflect the heightsof the object perpindicular to the XY plane. Similarly, in the casewhere the second set of measurement data comprises MAFM data, the secondsurface comprises a surface of the magnetic field of the object. Themagnetic field surface also extends along the XY plane but is contouredbased on and to reflect the magnetic field strengths perpindicular tothe XY plane.

[0447] In doing this, the surface image generator 666 identifies thedata points of the first set of measurement data and the data points ofthe second set of measurement data that have common X and Y coordinatevalues (i.e., have common locations in the XY plane). This is done sothat each data point in the first set of measurement data has acorresponding data point in the second set of measurement data and viceversa. Any data point in one set of measurement data that does not havesuch a corresponding data point in the other set of measurement data isremoved by the surface image generator. Then the surface image generatorgenerates the first and second sets of image data from the remaining(i.e., identified) measurement data points. For each set of image data,each data point in the corresponding set of image data is generated froma corresponding measurement data point in the corresponding measurementdata.

[0448] In doing so, the surface image generator 666 first scales thefirst and second sets of measurement data to produce the first andsecond sets of image data so that they can be display together in ameaningful manner and with a meaningful relationship. This may be donein several ways which can be selected by the user by issuing appropriatecommands with one of the user input devices 654. The commands arereceived by the GUI controller 669 which passes them onto the surfaceimage generator.

[0449] For example, this may be done for each set of measurement dataaccording to the following relationship m x Z/K=c. Here, m is amultiplier and c is a constant. Furthermore, Z is the largest range(i.e., difference) between any of the measurement values of the datapoints of the measurement data. And, K is the largest of (1) the largestrange (i.e., difference) between any of the X coordinate values of thedata points of the measurement data, and (2) the largest range betweenany of the Y coordinate values of the data points of the measurementdata.

[0450] In order to render a qualitative relationship between the firstand second surfaces of the overlay image 690, the scaling may be done sothat the same constant c is used for both sets of measurement data. As aresult, two different multipliers m₁ and m₂ will be used for the twosets of measurement data. Then, for each set of measurement data, themeasurement value for each measurement data point of the measurementdata is scaled by the corresponding multiplier m₁ or m₂ to form a Zcoordinate value in the Z dimension.

[0451] As indicated previously, each image data point in one of the setsof image data is generated from the corresponding measurement data pointin the corresponding set of measurement data. This is done so that eachimage data point includes the X and Y coordinate values of themeasurement data point and the corresponding Z coordinate value computedby the surface image generator 666. Thus, in the case where the Zcoordinate values of the first and second sets of image data arecomputed in the manner just described, they are qualitatively comparableso that the first and second surfaces that are formed from the Zcoordinate values are also qualitatively comparable.

[0452] Alternatively, the scaling may be done so as to render aquantitative relationship between the first and second surfaces 692 and694. This is done in the same manner as just described, except that themultiplier m obtained for one set of measurement data is also used forthe other set of measurement data. Then, for each set of measurementdata, the measurement value in the measurement data is scaled by thismultiplier m to create a Z coordinate value for the corresponding imagedata point of the corresponding image data. As a result, the Zcoordinate values of the first and second image data are quantitativelycomparable. This makes the first and second surfaces that are formedfrom the Z coordinate values also quantitatively comparable.

[0453] Each image data point in each set of image data also includes acolor coordinate value. This color coordinate value is assigned by thesurface image generator 666 in response to the coloring mapping selectedby the user in the color map box 698. For example, the color coordinatevalue of each image data point may be based on and correspond to the Zcoordinate value of the data point. The coloring of the surfaces 692 and694 may also be selected so as to distinguish them from each other.

[0454] The separate surfaces image generator 670 then generates overlayimage data by overlaying the first and second sets of image data itreceives from the surface image generator 666. This is done based on theselections made by the user using the control dialog box 689. Thedisplay 653 then displays the overlay image 690 in response to theoverlay image data, as shown in FIG. 75 or 76.

[0455] The separate surfaces image generator 670 generates the overlayimage data by overlaying the data points of the first and second sets ofimage data based upon the users selection of translucency or opacity inthe translucency selection box 697 for the first and second surfaces. Iftranslucency was selected for the first surface 692 and opacity for thesecond surface 694, the separate surfaces image generator generates theoverlay image data so that the first surface is translucently overlaidon the opaque second surface in the overlay image 690, as shown in FIG.75. In contrast, if opacity was selected for both the first and secondsurfaces, the separate surfaces image generator generates the overlayimage data so that the second surface is opaquely overlaid on the opaquefirst surface in the overlay image, as shown in FIG. 76. As thoseskilled in the art will recognize, both surfaces could be translucent orthe second surface could be opaquely overlaid on the translucent firstsurface. Moreover, standard 3-D rendering techniques are used inoverlaying the data points of the first and second sets of image data tomake the first and second surfaces appear translucent and opaque.

[0456] As also indicated earlier, for each of the first and secondsurfaces 692 and 694, the user may issue a command to select the amountof offset between this surface and the other surface using the offsetbox 700 of the control dialog box 689. The GUI controller 669 receivesthe command and provides an offset value specifying the selected amountof offset to the separate surfaces image generator 666. The separatesurfaces image generator then adds the offset value to each Z coordinatevalue of the image data for this surface. The separate surfaces imagegenerator 670 then generates the overlay image data so that this surfaceappears offset from the other surface in the overlay image by the amountof offset specified by the offset value, as shown in FIGS. 75 and 76.

[0457] Alternatively, the user may desire to have the two sets ofmeasurement data rendered as an overlay image 710 of a single contiguoussurface 712, as shown in FIG. 77. Referring also to FIG. 74, the user ofthe SPM system 100 may use one of the input devices 654 to select thecontiguous surface image generator 672 of the image overlay generator668 in order to display the two sets of measurement data together inthis way. In a similar manner to that discussed earlier for therendering the overlay image 690 of FIGS. 75 and 76, the user does so byissuing corresponding commands with one or more of the user inputdevices using the control dialog box 689. However, for each of the firstand second surfaces 692 and 694 in this case, these commands include acommand to select the surface in the active layer selection box 696 ofthe control dialog box, a command to select a contiguous surface in thecontiguous surface box 714 of the control dialog box, a command toselect (or assign) the surface's coloring mapping in the color map box698 of the control dialog box, and a command to select the amount ofoffset between this surface and the other surface in the offset box 700of the control dialog box. These commands are received by the CPU 650and are in response provided to the GUI controller 669 which then passesthem to the contiguous surface image generator. The two sets ofmeasurement data are then rendered by the surface image generator 666and the contiguous surface image generator for display on the display653 in the manner shown in FIG. 77.

[0458] In doing so, the surface image generator 666 generates the firstand second sets of image data from the first and second sets ofmeasurement data in the manner discussed earlier. The contiguous surfaceimage generator 672 then generates overlay image data by overlaying thefirst and second sets of image data based on the selections made by theuser using the control dialog box 689. The display 653 then displays theoverlay image 710 in response to the overlay image data in the mannershown in FIG. 77.

[0459] In this case, the contiguous surface image generator 672generates the overlay image data by overlaying the data points of thefirst and second sets of image data so that a single contiguous surface712 is rendered when the overlay image data is displayed by the display635. In doing so, the contiguous surface image generator identifies thedata points of the first image data that have larger Z coordinate valuesthan the corresponding data points of the second image data (i.e., thosewith the same X and Y coordinate values) and identifies the data pointsof the second image data that have larger Z coordinate values than thecorresponding data points of the first image data. The data points ofthe first image data that have larger Z coordinate values than thecorresponding data points of the second image data represent theportions 716 of the first surface 692 that overlap (i.e., extend over)the second surface 694. Similarly, the data points of the second imagedata that have larger Z coordinate values than the corresponding datapoints of the first image data represent the portions 718 of the secondsurface that overlap (i.e., extend over) the first surface.

[0460] These identified data points are then used by the contiguoussurface image generator 672 as the overlay image data. As a result, thecontiguous surface 712 comprises only the portions 716 of the firstsurface 692 that overlap the second surface 694 and only the portions718 of the second surface that overlap the first surface. These portionsof the first and second surfaces are connected so as to form thecontiguous surface.

[0461] As with the overlay image 690 of FIG. 75 or 76, the user mayissue a command to select the coloring mapping of each of the surfaces692 and 694 using the color map box 698 of the control dialog box 689.This coloring mapping is done in the same manner as was describedearlier and may be selected so as to distinguish the portions 716 and718 of these surfaces in the contiguous surface 712 from each other.

[0462] As also with the overlay image 690, for each of the first andsecond surfaces 692 and 694, the user may issue a command to select theamount of offset between this surface and the other surface using theoffset box 700 of the control dialog box 689. The GUI controller 669receives the command and provides an offset value specifying theselected amount of offset to the contiguous surface image generator 672.The contiguous surface generator then adds the offset value to each Zcoordinate value of the image data for the surface. The contiguoussurface image generator generates the overlay image data in the same wayas just described. But, the portions 716 of the first surface thatoverlap the second surface and the portions 718 of the second surfacethat overlap the first surface have changed in the contiguous surface712.

[0463] The GUI 664 is not limited to use in the SPM system 100 describedherein. For example, the GUI may be used for rendering an overlay imagein any of the ways just described in a geographical mapping system. Inthis case, the GUI could be used to generate the overlay image where oneof the surfaces represents the annual rainfall in an area and the othersurface is the topographical surface of the same area.

Rendering and Augmenting a Surface with Multiple Sets of MeasurementData

[0464] Referring to FIG. 78, the GUI 664 may also be used to render themultiple sets of measurement data together as a 3-D (three dimensional)surface image 720 of an augmented surface 722 on the display 653. Inthis case, a primary set of measurement data for a predefined primarymeasurement parameter is used to render the basic contour of the surfaceand one or more secondary sets of measurement data for one or morecorresponding secondary measurement parameters are used to provideaugmentation of various aspects of this surface. For example, thesecondary sets of measurement data may be used to texture and/or colorthe surface.

[0465] Referring also to FIG. 74, the user of the SPM system 100 may useone of the input devices 654 to select the augmented surface imagegenerator 674 of the GUI 664 in order to display the sets of measurementdata together in this way. Here, the user also issues commands with oneor more of the user input devices using the control dialog box 689.These commands include a command to select the first surface in theactive layer selection box 696 of the control dialog box, a command toselect augmentation in the augmentation box 715 of the control dialogbox, and a command to select (or assign) the coloring mapping ofaugmented surface 722 in the color map box 698 of the control dialogbox. These commands are received by the CPU 650 and are in responseprovided to the GUI controller 669 which then passes them to the surfaceimage generator 666, the augmentation data generator 675, and theaugmented image generator 674. The sets of measurement data are thenrendered by the surface image generator, the augmentation datagenerator, and the augmented image generator for display on the display653 in the manner shown in FIG. 78.

[0466] In doing so, the surface image generator 666 generates base imagedata from a primary set of measurement data for a predefined primarymeasurement parameter in the manner discussed earlier. Specifically,this base image data represents a base surface, such as surface 692 asshown in FIGS. 75 and 76. Each image data point of the base image dataincludes the X, Y, and Z coordinate values. The Z coordinate value isderived from the measurement value of the corresponding measurement datapoint. This measurement value is for the predefined primary measurementparameter.

[0467] The one or more secondary sets of measurement are then used toaugment the base image data. As discussed earlier, each measurement datapoint of such a set of measurement data includes X and Y coordinatevalues and a measurement value. The measurement value represents ameasurement of a predefined secondary measurement parameter made at thelocation in the XY plane corresponding to the XY coordinate values.

[0468] The augmentation data generator 675 uses each of the one or moresecondary sets of measurement data to generate augmentation data. Foreach secondary set of measurement data, the augmentation data includesaugmentation data points. Each augmentation data point includes X and Ycoordinate values and a corresponding augmentation value for eachsecondary set of measurement data. Each augmentation value is generatedbased on the measurement value of the measurement data point in thecorresponding secondary set of measurement data that has the same X andY coordinate values.

[0469] The augmented image generator 674 then generates the augmentedimage data by augmenting the base image data received from the surfaceimage generator 666 with the augmentation data received from theaugmentation data generator 675. This may be done by including theaugmentation value in each augmentation data point of the augmentationdata as another coordinate value of the corresponding image data pointof the base image data. Or, this may be done by substituting theaugmentation data value for or adding the augmentation value to thecorresponding Z coordinate value in the corresponding image data pointof the base image data.

[0470] The augmentation image data is then displayed by the display 653as a 3-D augmented image of an augmented surface 722. Thus, the basiccontour of this surface is like that of the surface 692 of FIGS. 75 and76 and is based on the primary measurement data set. However, thissurface is augmented based on the one or more secondary sets ofmeasurement data.

[0471] In one example, the basic contour of the augmented surface 722may be generated from AFM measurement data of the object 102. Then, thecoloring of the augmented AFM surface 722 could be based on MAFMmeasurement data for the object.

[0472] In this case, the base image data is generated by the surfaceimage generator 666 from the AFM measurement data in the mannerdiscussed earlier for the overlay image generator 668. Then, theaugmentation data generator 675 may cause the surface image generator togenerated a second set of image data from the MAFM measurement data alsoin the manner discussed earlier for the overlay image generator.

[0473] Then, the augmentation data generator 675 uses the color mappingselected by the user in the color map box 689 to generate augmentationdata for coloring the surface 722 based on the Z coordinate values forthe image data points of the second set of image data. Thus, theaugmentation value for each augmentation data point is a colorcoordinate value that is based on the Z coordinate value for the imagedata point in the second set of image data that has the same X and Ycoordinate values.

[0474] The augmented image generator 674 then uses the color coordinatevalue in each augmentation data point of the augmentation data asanother coordinate value of the corresponding image data point of thebase image data. Referring again to FIG. 78, the basic contour of theaugmented AFM surface is like that of the surface 692 of FIGS. 75 and 76and is based on the AFM measurement data. Moreover, the augmented AFMsurface is colored based on the MAFM measurement data.

[0475] Additionally, as shown in FIG. 78, the augmented image data forthe augmented AFM surface 722 can be overlaid with the second image datafor the magnetic field surface 694. This is done in the manner discussedearlier for the overlay image generator 668.

[0476] In another example, the basic contour of the augmented surface722 may also be generated from AFM measurement data of the object 102.Then, the texturing (i.e., stippling) of the augmented AFM surface 722could be based on LAFM measurement data for the object.

[0477] In this case, the base image data for the augmented AFM surface722 is again generated by the surface image generator 666 from the AFMmeasurement data in the manner discussed earlier for the overlay imagegenerator 668. Moreover, the augmentation data generator 675 generatesaugmentation data from the LAFM measurement data.

[0478] The LAFM measurement data may be generated using one of theconventional SPM probes 122 described earlier. Each measurement datapoint of the LAFM measurement data includes X and Y coordinate valuesand an LAFM measurement value for the lateral force at the location inthe XY plane corresponding to the XY coordinate values.

[0479] The augmentation value for each augmentation data point of theaugmentation data is a texture coordinate value. The texture coordinatevalue is based on the LAFM measurement value for the measurement datapoint in the LAFM measurement data that has the same X and Y coordinatevalues. Here, the texture coordinate value represents a texture density(stipples per unit area) that corresponds to the LAFM measurement value.

[0480] The augmented image generator 674 then uses the texturecoordinate value in each augmentation data point of the augmentationdata as another coordinate value of the corresponding image data pointof the base image data. Referring again to FIG. 78, the basic contour ofthe augmented AFM surface is like that of the surface 692 of FIGS. 75and 76 and is based on the AFM measurement data. Moreover, the augmentedAFM surface is textured based on the MAFM measurement data.

[0481] Furthermore, as described earlier, the GUI 664 is not limited touse in the SPM system 100 described herein. Similar to the example givenearlier, the GUI may be used in a geographical mapping system formodulating a surface in any of the ways just described. In this case,the GUI could be used to generate the modulated image where a surfacerepresenting the topography of an area would be modulated by a colorcorresponding to the rainfall and by texture (i.e., stippling) whosedensity (stipples per unit area) corresponds to the amount of annualbiomass produced in the area.

Rendering a 3-D Embedded Display Tool Image

[0482] The GUI 664 may also be used to render a 3-D composite image 730on the display 653, as shown in FIGS. 79,80, and 81. The composite imageis of an object 102 and a display tool 734 embedded in the object. Theuser can adjustably locate the display tool in the object with one ormore of the user input devices 654.

[0483] In order to render the composite image 730 on the display 653,the user first issues commands with one or more of the user inputdevices 654 in order to select an object image generator 676, a displaytool image generator 678, and a composite image generator 780 of the GUI664. These commands are received by the CPU 650 and the operating system660 in response causes the object image generator, the display toolimage generator, and the composite image generator to be executed on theCPU or in or with specialized display resources.

[0484] The object image generator 676 generates object image data thatrepresents a 3-D object image of the object 102. The object imagegenerator generates the object image data from one or more sets ofmeasurement data. For example, the object image generator may comprisethe surface image generator 666 to generate surface image data of theobject from a set of measurement data in the manner discussed earlier.Or, the object image generator may comprise both the surface imagegenerator and the overlay image generator 668 to generate togetheroverlay image data from two sets of measurement data in the mannerdiscussed earlier.

[0485] As mentioned earlier, the display tool 734 is embedded in theobject 102 of the composite image 730 and can be adjustably located inthe object using one or more of the user input devices 654 in the mannerdescribed shortly. The display tool image generator 678 determines thelocation of the display tool in response to a command issued by the userwith one or more of the input devices. The display tool image generatoralso receives the object image data from the object image generator 676.In response, the display tool image generator determines the locationand sizing in 3-D that the display tool would have in the object of theobject image. Based on this determination, the display tool imagegenerator generates display tool image data representing a 3-D displaytool image of the display tool as it would otherwise appear in theobject of the object image.

[0486] Referring to FIG. 79, the display tool 734 may comprise anembedded cursor defined by cross hairs or arrows. In the case where thecomposite image 730 is of the outer surface 732 of the object, theembedded cursor is embedded in and adjustably locatable in this surface,as shown in FIG. 79. As is evident in FIG. 79, the cross hairs of thecursor extend perpendicular to each other across the surface. The userlocates the embedded cursor in the surface with one or more of the userinput devices 654 by issuing corresponding commands. For example, theuser may use a mouse to first position a mouse cursor at theintersection of the cross hairs. Then, the user may activate themovement of the embedded cursor by clicking and holding one of thecontrol buttons of the mouse at this intersection. Then, while stillholding down this control button, the user may move the mouse so as todrag the embedded cursor and its cross hairs across the surface of theobject to a desired location on the object specified by the intersectionof the cross hairs.

[0487] In this case, the display tool image generator 678 determines thesurface of the object 102 from the object image data. Then, ittranslates the position of the mouse cursor into a location on thesurface of the object in the object image. In response, the display toolimage generator then determines the location and sizing in 3-D that thedisplay tool would have on this surface and generates the display toolimage data based on this.

[0488] Alternatively, the composite image 730 may be of the volume ofthe object 102 including the surfaces 737 and 739 of volume elements ofthe object. In this case, the display tool 734 may also comprise anembedded cursor that is embedded and positionable in this volume, asshown in FIG. 80. In this case, the cross hairs of the cursor extendperpendicular to each other across the surface 737 of a first volumeelement of the object. Here, the user may position the embedded cursoron this surface with one or more of the user input devices 654 byissuing corresponding commands. This is done in the same manner asdescribed earlier for the case where the composite image is of the outersurface 732 of the object.

[0489] But, in this case, the user may also position the embedded cursorso as to move it from the surface 737 of a first volume element to thesurface 739 of a second volume element of the object. This also done byissuing corresponding commands with one or more of the user inputdevices 654. For example, the user may use a mouse to first position amouse cursor at the intersection of the cross hairs. Then, the user mayactivate the movement of the embedded cursor by clicking and holding adifferent control button on the mouse than the one used to positionacross a surface. Then, while still holding down this control button,the user may move the mouse so as to drag the embedded cursor and itscross hairs from the surface of the first volume element to the surfaceof the second volume element. In order to indicate to the user when theembedded cursor is on the new surface, the shading of the cross hairschanges when this occurs. Then, the embedded cursor can be positionedacross the surface of this new volume element in the same manner as thatdescribed earlier for the first volume element.

[0490] Moreover, the volume of the object 102 may either be homogeneousor contain distinct interior surfaces, such as surface 739, of volumeelements that may also contain volume information or be mainly surfacelike (i.e., very thin homogeneous in cross section). Thus, the usercould cause the embedded cursor to move between the surfaces and causeit to adopt the surface tracking behavior just described when itencounters these interior surfaces. Thus, the user can cause theembedded cursor to move throughout a volume of distinct surfacesalternatingly sticking to the surfaces and being pushed in or pulled outof the surfaces.

[0491] In this case, the display tool image generator 678 determines thesurfaces 737 and 739 of the volume elements of the object 102 from theobject image data. Then, it translates the position of the mouse cursorinto a position in the volume of the object in the object image. Inresponse, the display toot image generator then determines thepositioning and sizing in 3-D that the display tool would have in thisvolume and generates the display tool image data based on this.

[0492] As those skilled in the art will recognize, the display tool 734in the examples just described may comprise a measurement tool of thekind described in PCT Application No. PCT/US96/12255 referenced earlier.This kind of measurement tool includes one or more embedded cursors ofthe type just described for making various types of measurements in animage of an object. Additionally, those skilled in the art willrecognize that the user input devices 654 could include a three axispointing device. This would be particularly useful in positioning thedisplay tool 734 in 3-D in the composite image 730 of the volume of theobject 102 shown in FIG. 80 in a similar manner to that describedearlier.

[0493] In another example shown in FIG. 81, the display tool 734 maycomprise a measurement grid embedded in the outer surface 732 of theobject 102. Here as well, the embedded measurement grid is adjustablylocatable in this surface. For example, the user may adjust the spacingand/or coloring of the X grid lines and/or the Y grid lines by issuingcorresponding commands with one or more of the user input devices 654.

[0494] In all of the cases just described, the composite image generator680 then generates composite image data by combining the object imagedata and display tool image data it receives from the object imagegenerator 676 and the display tool image generator 678. The display 653then displays the composite image 690 in response to the composite imagedata, as shown in FIGS. 79 to 81.

[0495] The composite image generator 676 generates the composite imagedata by overlaying the data points of the display tool image data on thedata points of the object image data. This is done so that the displaytool is embedded in the object and appears in 3-D as an element of theobject, as shown in FIGS. 79 to 81. In doing so, the composite imagegenerator 676 assigns sizing, texture, coloring, shading, opacity, andtranslucency to the various elements, including the display tool 734, ofthe object 102 so that they can be distinguished from each other andtheir positions with respect to each other can be discerned. This is alldone using standard 3-D rendering techniques.

[0496] While the present invention has been described with reference toa few specific embodiments, the description is illustrative of theinvention and is not to be construed as limiting the invention. Variousmodifications may occur to those skilled in the art without departingfrom the true spirit and scope of the invention as defined by theappended claims.

What is claimed is:
 1. An SPM system for making a modification to anobject, the SPM system comprising: an SPM probe for making amodification to the object; a positioning system to position the SPMmodification probe with respect to the object; and a controller tocontrol the positioning system such that (1) the modification of theobject is made with the SPM probe and particulate material is removedfrom the object due to the modification, and (2) the SPM probe makessweeping motions over the object to sweep the particulate material away.2. An SPM system as recited in claim 1 further comprising: inspectioncomponents to make an inspection of the modification; the sweepingmotions of the SPM probe sweeping the debris material away from wherethe modification was made so that the inspection components may inspectthe modification without obstruction.
 3. An SPM system as recited inclaim 2 wherein: the inspection components include a second SPM probe tomake the inspection; the positioning system positions the second SPMprobe with respect to the object; and the controller further controlsthe positioning system such that the inspection is made with the secondSPM probe.
 4. An SPM system as recited in claim 2 wherein: theinspection components include the SPM probe; and the controller furthercontrols the positioning system such that the inspection is made withthe SPM probe.
 1. An SPM system comprising: an SPM probe for making amodification to the object; a positioning system to position the SPMmodification probe with respect to the object; and a controller tocontrol the positioning system such that positioning of the SPM probewith respect to the object is made by driving the positioning systemsimultaneously in the X, Y, and Z dimensions.
 2. An SPM system asrecited in claim 1 wherein: the SPM probe is used to make a modificationto the object by performing a cut in or milling the object; thecontroller controls the positioning system such that the modification ofthe object is made with the SPM probe by driving the positioning systemsimultaneously in the X, Y, and Z dimensions.
 3. An SPM system asrecited in claim 1 wherein the controller drives the positioning systemsimultaneously in the X, Y, and Z dimensions so that the motion of theSPM probe in making the modification is a series of 3-D vectors.
 4. AnSPM system as recited in claim 3 wherein the motion defines a 3-Dvector, arc, curve, or surface.
 1. A graphical user interface forrendering first measurement data and second meassurement data on adisplay, the first and second measurement data each comprisingmeasurement data points that each include first and second coordinatevalues representing a positon in a plane, each of the data points of thefirst measurement data further including a measurement valuerepresenting a measurement of a first predefined measurement parameter,each of the data points of the second measurement data further includinga measurement value representing a measurement of a second predefinedmeasurement parameter, the graphical user interface comprising: asurface image generator to generate first image data from the firstmeasurement data and second image data from the second measurement data,the first image data representing a 3-D first surface image of a firstsurface that extends along the plane and is contoured based on themeasurement values of the data points of the first measurement data, thesecond image data representing a 3-D second surface image of a secondsurface that extends along the plane and is contoured based on themeasurement values of the data points of the second measurement data;and an overlay image generator to generate overlay image data byoverlaying the first and second image data, the overlay image datarepresenting a 3-D overlay image of one of the first and second surfacesoverlaid on the other one of the first and second surfaces, the overlayimage being displayed by the display in response to the overlay imagedata.
 2. A graphical user interface as recited in claim 1 wherein thefirst and second predefined measurement parameters are different.
 3. Agraphical user interface as recited in claim 1 wherein the first andsecond predefined measurement parameters are the same.
 4. A graphicaluser interface as recited in claim 1 wherein the overlay image generatorcomprises a separate surfaces image generator to generate the overlayimage data so that the overlay image comprises the second surfacetranslucently overlayed on the first surface.
 5. A graphical userinterface as recited in claim 4 further comprising: an overlaycontroller to generate an offset value in response to a command providedby a user with a user input device, the office value representing aselected amount of offset between the first and second surfaces; and theseparate surfaces image generator generating the overlay image datafurther in response to the offset value so that the first and secondsurfaces appear offset by the selected amount in the overlay image.
 6. Agraphical user interface as recited in claim 1 wherein the overlay imagegenerator comprises a separate surfaces image generator to generate theoverlay image data so that the overlay image comprises one of the firstand second surfaces opaquely overlayed on the other one of the first andsecond surfaces.
 7. A graphical user interface as recited in claim 6further comprising: an overlay controller to generate an offset value inresponse to a command provided by a user with a user input device, theoffice value representing a selected amount of offset between the firstand second surfaces; and the separate surfaces image generatorgenerating the overlay image data further in response to the offsetvalue so that the first and second surfaces appear offset by theselected amount in the overlay image.
 8. A graphical user interface asrecited in claim 1 wherein the overlay image generator comprises acontiguous surface image generator to generate the overlay image data sothat the overlay image comprises a contiguous surface including firstportions and second portions that are connected together, the firstportions comprising the portions of the first surface that overlap thesecond surface and the second portions comprising the portions of thesecond surface that overlap the first surface.
 9. A graphical userinterface as recited in claim 8 further comprising: an overlaycontroller to generate an offset value in response to a command providedby a user with a user input device, the offset value representing aselected amount of offset between the first and second surfaces; thecontiguous surface image generator generating the overlay image datafurther in response to the offset value so that the first and secondsurfaces are offset by the selected amount and the first and secondportions of the contiguous surface are altered in response. Claims toSurface Augmentation
 1. A graphical user interface for rendering firstmeasurement data and second meassurement data on a display, the firstand second measurement data each comprising measurement data points thateach include first and second coordinate values representing a positonin a plane, each of the data points of the first measurement datafurther including a measurement value representing a measurement of afirst predefined measurement parameter, each of the data points of thesecond measurement data further including a measurement valuerepresenting a measurement of a second predefined measurement parameter,the graphical user interface comprising: a surface image generator togenerate base image data from the first measurement data, the base imagedata representing a 3-D surface image of a surface that extends alongthe plane and is contoured based on the measurement values of the datapoints of the first measurement data, an augmentation data generator togenerate augmentation data from the second measurement data, theaugmentation data providing an augmentation of the surface based on themeasurement values of the data points of the second measurement data; anaugmented image generator to generate augmented image data by augmentingthe base image data with the augmentation data, the augmented image datarepresenting a 3-D augmented image of the surface augmented by theaugmentation.
 2. A graphical user interface as recited in claim 1wherein the augmentation data provides coloring of the surface.
 3. Agraphical user interface as recited in claim 1 wherein the augmentationdata provides texturing of the surface. Claims to Embedded Cursor Method1. A graphical user interface for rendering on a display a 3-D compositeimage of an object and a display tool embedded in the object, thegraphical user interface comprising: an object image generator togenerate object image data that represents a 3-D object image of theobject; a dislay tool image generator to generate display tool imagedata based on the object image, the display tool image data representinga 3-D display tool image of the display tool; and a composite imagegenerator to generate composite image data by combining the display toolimage data and the object image data so that the composite image datarepresents the composite image, the composite image being displayed bythe display in response to the composite image data.
 2. A graphical userinterface as receited in claim 1 wherein the display tool image data isgenerated further in response to a command issued by a user with a userinput device to adjustably locate the display tool in 3-D in the objectin the composite image.
 3. A graphical user interface as recited inclaim 1 wherein the 3-D composite image of the object is of the volumeof the object and the display tool is embedded in and positionable inthe volume of the object.
 4. A graphical user interface as recited inclaim 1 wherein the 3-D composite image of the object is of the surfaceof the object and the display tool is embedded in and positionable inthe surface of the object.
 1. An SPM system for inspecting and modifyingan object, the SPM system comprising: SPM probes that include one ormore inspection SPM probes and one or more modification SPM probes;inspection components to inspect the object by making SPM measurementswith the one or more SPM inspection probes and to generate inspectionresults from the SPM measurments; and modification components to modifythe object with the one or more modification SPM probes based on theinspection results.
 2. An SPM system as recited in claim 1 that furthercomprises: calibration structures; the inspection components calibratethe one or more inspection SPM probes for making the SPM measurementswith ones of the calibration structures; the modification componentscalibrate the one or more modification SPM probes for modifying theobject using ones of the calibration structures.
 3. An SPM system asrecited in claim 1 wherein: the inspection components and themodification components each include a scanning head; the inspectioncomponents selectively load and unload the one or more inspection SPMprobes to and from the scanning head of the inspection components tomake the SPM measurements; and the modifcation subsystem selectivelyloads and unloads the one or more modification SPM probes to and fromthe scanning head of the modification components to make themodifications to the object.
 4. An SPM system as recited in claim 3wherein the scanning head of the modification components and thescanning head of the inspection components are the same scanning head.5. An SPM system as recited in claim 3 wherein the scanning head of themodification components and the scanning head of the inspectioncomponents are different scanning heads.
 6. An SPM system for inspectingand modifying an object, the SPM system comprising: SPM probes thatinclude one or more inspection SPM probes and one or more modificationprobes for modifying the object; inspection means for inspecting theobject by making SPM measurements with the one or more SPM inspectionprobes and generating inspection results from the SPM measurments; andmodification means for modifying the object with the one or moremodification SPM probes based on the inspection results.
 7. An SPMsystem as recited in claim 6 that further comprises: calibrationstructures; the inspection means calibrates the one or more inspectionSPM probes for making the SPM measurements with ones of the calibrationstructures; the modification means calibrates the one or moremodification SPM probes for modifying the object using ones of thecalibration structures.
 8. An SPM system as recited in claim 6 wherein:the inspection means and the modification means each include a scanninghead; the inspection means selectively loads and unloads the one or moreinspection SPM probes to and from the scanning head of the inspectionmeans to make the SPM measurements; and the modifcation meansselectively loads and unloads the one or more modification SPM probes toand from the scanning head of the modification means to make themodifications to the object.
 9. An SPM system as recited in claim 8wherein the scanning head of the modification components and thescanning head of the inspection components are the same scanning head.10. An SPM system as recited in claim 8 wherein the scanning head of themodification means and the scanning head of the inspection means aredifferent scanning heads.
 11. A method for inspecting and modifying anobject, the method comprising the steps of: inspecting the object bymaking SPM measurements with one or more SPM inspection probes;generating inspection results from the SPM measurments; and modifyingthe object with one or more modification SPM probes based on theinspection results.
 12. A method as recited in claim 11 that furthercomprises the steps of: the inspection means calibrates the one or moreinspection SPM probes for making the SPM measurements with ones of thecalibration structures; the modification means calibrates the one ormore modification SPM probes for modifying the object using ones of thecalibration structures.
 13. A method as recited in claim 11 that furthercomprises the steps of: selectively loading and unloading the one ormore inspection SPM probes to and from a scanning head to make the SPMmeasurements; and selectively loading and unloading the one or moremodification SPM probes to and from a scanning head to make themodifications to the object.
 14. A method as recited in claim 13 whereinthe scanning head used in the modifying step and the scanning head usedin the inspecting step are the same scanning head.
 15. A method asrecited in claim 13 wherein wherein the scanning head used in themodifying step and the scanning head used in the inspecting step aredifferent scanning heads. Claims to Probe with Base Surrounding Tip thatis Not Activated Below Surface of Base
 16. An SPM probe that comprises:an SPM tool with which to make the SPM measurements of or SPMmodifications to an object; and a base that has an upper and lowersurface and is connected to and surrounds the SPM tool so that the SPMtool is located between the upper and lower surface and is therebyprotected from being damaged.
 17. An SPM probe as recited in claim 16further comprising: an additional SPM tool with which to make SPMmeasurements of or SPM modifications to an object; the base beingconnected to and surrounding the additional SPM tool so that the SPMtool is located between the upper and lower surface.
 18. An SPM systemthat comprises: an SPM probe comprising: an SPM tool; and a base thathas an upper and lower surface and is connected to and surrounds the SPMtool so that the SPM tool is located between the upper and lower surfaceand Is thereby protected from being damaged; and components to make SPMmeasurements of or SPM modifications to an object with the SPM tool. 19.An SPM system as recited in claim 18 wherein the SPM probe furthercomprises: an additional SPM tool; the base being connected to andsurrounding the additional SPM tool so that the additional SPM tool islocated between the upper and lower surface and is thereby protectedfrom being damaged; the components also making SPM measurements of orSPM modifications to an object with the additional SPM tool. Claims toProbe with Base Surrounding Tip that is Activated Below Surface of Base20. An SPM probe that comprises: an SPM tool that has a cantilever and atip on the cantilever; and a base that has an upper and lower surfacerand surrounds the SPM tool; the cantilever of the SPM tool beingconnected to the base so that the SPM tool is located between the upperand lower surface when the cantilever is not bending, the cantilever ofthe SPM tool being capable of being selectively bent back and forth by atip activation apparatus so as to selectively position the tip of theSPM tool below and above the lower surface of the base whereby the tipof the SPM tool may be selectively activated and deactivated for makingSPM measurements or SPM modifications to an object and protected frombeing damaged when deactivated.
 21. An SPM probe as recited in claim 20that further comprises the tip activation apparatus.
 22. An SPM probe asrecited in claim 21 wherein: the cantilever is conductive; the tipactivation apparatus comprises electrodes fixed to the base above andbelow the cantilever; whereby the canilever is selectively bent back andforth by applying selected voltages to the electrodes and thecantilever.
 23. An SPM probe as receited in claim 20 further comprising:an additional SPM tool having a cantilever and a tip on the cantilever;and the cantilever of the additional SPM tool being connected to thebase so that the additional SPM tool is located between the upper andlower surface when the cantilever is not bending, the cantilever of theadditional SPM tool being capable of being selectively bent down and upby a tip activation apparatus so as to selectively position the tip ofthe additional SPM tool below and above the lower surface of the basewhereby the tip of the additional SPM tool may be selectively activatedand deactivated for making SPM measurements of or SPM modifications toan object and protected from being damaged when deactivated.
 24. An SPMsystem that comprises: an SPM probe that comprises: an SPM tool that hasa cantilever and a tip on the cantilever; and a base that has an upperand lower surfacer and surrounds the SPM tool; the cantilever of the SPMtool being connected to the base so that the SPM tool is located betweenthe upper and lower surface when the cantilever is not bending; a tipactivation apparatus to selectively cause the cantilever of the SPM toolto be bent down and up so as to selectively position the tip of the SPMtool below and above the lower surface of the base whereby the tip ofthe SPM tool may be selectively activated for operation and deactivatedfor protection against being damaged; components to make SPMmeasurements or SPM modifications to an object with the SPM tool whenthe tip of the SPM tool is activated.
 25. An SPM probe as recited inclaim 24 wherein: the tip activation apparatus comprises a pivot, alever arm that pivots on the pivot, and a lever arm movement mechanism;whereby the canilever of the SPM tool is selectively bent down and up bycausing the lever arm movement mechanism to selectively move a first endof the lever arm up and down so that the lever arm pivots on the pivotand a second end of the lever arm moves down and up while contacting thecantilever of the SPM tool.
 26. An SPM system as recited in claim 24wherein the SPM probe comprises the tip activation apparatus.
 27. An SPMprobe as recited in claim 26 wherein: the cantilever is conductive; thetip activation apparatus comprises electrodes fixed to the base aboveand below the cantilever, whereby the canilever is selectively bent backand forth by applying selected voltages to the electrodes and thecantilever.
 28. An SPM probe as recited in claim 24 further comprising:an additional SPM tool having a cantilever and a tip on the cantilever;and the cantilever of the additional SPM tool being connected to thebase so that the additional SPM tool is located between the upper andlower surface when the cantilever is not bending, the cantilever of theadditional SPM tool being capable of being selectively bent back andforth by a tip activation apparatus so as to selectively position thetip of the additional SPM tool below and above the lower surface of thebase whereby the tip of the additional SPM tool may be selectivelyactivated and deactivated for making SPM measurements of or SPMmodifications to an object and protected from being damaged whendeactivated.
 29. A microstructured force balance that comprises: a base;a contact platform; a suspension system connected to the base and thecontact platform to displaceably suspend the contact platform over thebase such that contact displacement of the contact platform is causedwhen a contact force is applied to the contact platform via contact withthe contact platform; and one or more displacement actuators to apply anactuator force to the contact platform to cause actuator displacement ofthe contact platform with respect to the base; wherein the contact andactuator forces are applied in opposite directions and the contact andactuator displacements occur in opposite directions.
 29. Amicrostructured force balance that comprises: a base; a contactplatform; a suspension system connected to the base and the contactplatform to displaceably suspend the contact platform over the base, thecontact platform being displaced by varying amounts of displacement whenvarying amounts of force are applied to the contact platform bycontacting the contact platform; and a displacement actuator toselectively apply varying amounts of force to the contact platform toselectively cause varying amounts of displacement of the contactplatform with respect to the base.
 30. A microstructured force balanceas recited in claim 29 wherein the suspension system comprises springarms connected to the contact platform and the base.
 31. Amicrostructured force balance as recited in claim 29 wherein: thesuspension system displaceably suspends the contact platform over thebase for displacement in multipe dimensions; the contact force hascomponents in the multiple dimensions so that the displacement of thecontact platform is in first directions in the multiple dimensions; themicrostructured force balance further comprises multiple ones of thedisplacement actuator to apply the force in second directions oppositeto the first directions and along the multiple axis of direction so thatthe actuator caused displacement and opposite to selectively cause thevarying amounts of displacement of the contact platform in the multipledirections.
 31. A microstructured force balance as recited in claim 29wherein: the suspension system displaceably suspends the contactplatform over the base in multiple directions; the contact platformbeing displaced in the multiple directions by the varying amounts ofdisplacement when the varying amounts of force are applied to thecontact platform in the multiple directions by contacting the contactplatform; and the microstructured force balance further comprisesmultiple ones of the displacement actuator to selectively apply thevarying amounts of force in the multiple directions to selectively causethe varying amounts of displacement of the contact platform in themultiple directions.
 32. A microstructured force balance as recited inclaim 29 that further comprises one or more displacement sensors tosense the varying amounts of displacement of the contact platform.
 33. Amicrostructured force balance as recited in claim 32 wherein: thesuspension system displaceably suspends the contact platform over thebase in multiple directions; the contact platform being displaced by thevarying amounts of displacement in the multiple directions when thevarying amounts of force are applied to the contact platform in themultiple directions by contacting the contact platform; themicrostructured force balance further comprises multiple ones of thedisplacement actuator to selectively apply the varying amounts of forcein the multiple directions to selectively cause the varying amounts ofdisplacement of the contact platform in the multiple directions; and themicrostructured force balance further comprises multiple ones of thedisplacement sensor to sense the varying amounts of displacement of thecontact platform in the multiple directions.
 34. A microstructured forcebalance as recited in claim 32 that further comprises a control circuitlocated on the base, the control circuit being coupled to thedisplacement actuator to control the displacement actuator toselectively apply the varying amounts of force to the contact platformin response to displacement control signals, the control circuit beingcoupled to the displacement sensor to generate displacement measurementsignals that provide a measure of the varying amounts of displacement ofthe contact platform sensed by the displacement sensor.
 35. Amicrostructured force balance as recited in claim 29 wherein: thecontact platform comprises a displaceable electrode that is displacedwhen the contact platform is displaced; and the displacement actuatorcomprises the displaceable electrode and a stationary electrode fixedlycoupled to the base such that the varying amounts of force selectivelyapplied to the contact platform by the displacement actuator are appliedby selectively applying voltages across the stationary and displaceableelectrodes.
 36. A microstructured force balance as recited in claim 32wherein: the contact platform comprises a displaceable electrode that isdisplaced when the contact platform is displaced; and the displacementsensor comprises the displaceable electrode and a stationary electrodefixedly coupled to the base such that the varying amounts ofdisplacement of the contact platform are sensed by sensing voltagechanges across the stationary and displaceable electrodes.
 37. Amicrostructured force balance as recited in claim 29 wherein: thecontact platform comprises a displaceable comb structure that isdisplaced when the contact platform is displaced; the displacementactuator comprises the displaceable comb structure and a stationary combstructure fixedly coupled to the base such that the varying amounts offorce selectively applied to the contact platform by the displacementactuator are applied by selectively applying voltages across thestationary and displaceable comb structures.
 38. A microstructured forcebalance as recited in claim 32 wherein: the contact platform comprises adisplaceable comb structure that is displaced when the contact platformis displaced; and the displacement sensor comprises the displaceablecomb structure and a stationary comb structure fixedly coupled to thebase such that the varying amounts of displacement of the contactplatform are sensed by sensing voltage changes across the stationary anddisplaceable comb structures.
 39. A force measurement system to measurea force applied by an item with respect to displacement of the item, theforce measurement system comprising: a microstructured force balancethat comprises: a base; a contact platform; a suspension systemconnected to the base and the contact platform to displaceably suspendthe contact platform over the base, the displacment of the item causingthe force that causes a first displacement of the contact platform thatis applied to the contact platform by an item while the item contactsthe contact platform; and a displacement actuator to apply a force tothe contact platform to cause a second displacement of the contactplatform with respect to the base; system components to measure theforce applied by the item by (a) causing the displacement actuator toapply the force to the contact platform to cause the second displacementof the contact platform, (b) measuring the first and seconddisplacements and determining when the first displacement has beennulled by the second displacement, and (c) measuring the force appliedby the displacement actuator when the first displacement has beendetermined to have been nulled by the second displacement.
 39. A forcemeasurement system to measure a force applied to an item with respect todisplacement of the item and/or the displacement of the item withrespect to the force applied to the item, the system comprising: amicrostructured force balance that comprises: a base; a contactplatform; a suspension system connected to the base and the contactplatform to displaceably suspend the contact platform over the base; anda displacement actuator to apply a force to the contact platform tocause the displacement of the contact platform with respect to the base;system components (a) cause the displacement actuator to apply the forceto the contact platform that cause the displacement of the contactplatform, and (b) measure the force applied to the item with respect tothe displacement of the item and/or the displacement of the item withrespect to the force applied to the item.
 39. A force measurement systemto measure a contact force applied by an item, the force measurementsystem comprises: a microstructured force balance that comprises: abase; a contact platform; a suspension system connected to the base andthe contact platform to displaceably suspend the contact platform overthe base such that contact displacement of the contact platform iscaused when the contact force is applied by the item to the contactplatform via contact with the contact platform; and one or moredisplacement actuators to apply an actuator force to the contactplatform to cause actuator displacement of the contact platform withrespect to the base; the contact and actuator forces being applied inopposite directions and the contact and actuator displacements occuringin opposite directions; system components to measure the contact forceby (a) causing the one or more displacement actuators to apply theactuator force to the contact platform, (b) and (b) measuring theactuator force when the contact displacement is nulled by the actuatordisplacement.
 39. A force measurement system to measure a force appliedto an item, the force measurement system comprising: a microstructuredforce balance that comprises: a base; a contact platform; a suspensionsystem connected to the base and the contact platform to displaceablysuspend the contact platform over the base such that a force that causesa first displacement of the contact platform is applied to the contactplatform by an item while the item contacts the contact platform; and adisplacement actuator to apply a force to the contact platform to causea second displacement of the contact platform with respect to the base;system components to measure the force applied to an item by (a) causingthe displacement actuator to apply the force to the contact platform tocause the second displacement of the contact platform, (b) measuring thefirst and second displacements and determining when the firstdisplacement has been nulled by the second displacement, and (c)measuring the force applied by the displacement actuator when the firstdisplacement has been determined to have been nulled by the seconddisplacement.
 39. A system to measure displacement of an item withrespect to a known force applied to the item, the system comprising: amicrostructured force balance that comprises: a base; a contactplatform; a suspension system connected to the base and the contactplatform to displaceably suspend the contact platform over the base; anda displacement actuator to apply a known force to the contact platformto cause displacement of the contact platform with respect to the basewhich causes the displacement of the item when the item is in contactwith the contact platform; and system components to (a) cause thedisplacement actuator to apply the known force to the contact platformand (b) measure the displacement of the item.
 39. A system to measure aforce applied to an item with respect to displacement of the item, thesystem comprising: a microstructured force balance that comprises: abase; a contact platform; a suspension system connected to the base andthe contact platform to displaceably suspend the contact platform overthe base; and a displacement actuator to apply a force to the contactplatform to cause displacement of the contact platform with respect tothe base which causes the displacement of the item when the item is incontact with the contact platform; and system components to (a) causethe displacement actuator to apply the force to the contact platform,(b) measure the force, and (c) measure the displacement of the item. 39.An SPM system to make SPM measurements of or SPM modifications to anobject, the SPM system comprising: an SPM probe with a cantilver and atip on the cantilever; a positioning system to position the SPM probe; amicrostructured force balance that comprises: a base; a contactplatform; a suspension system connected to the base and the contactplatform to displaceably suspend the contact platform over the base; anda displacement actuator to apply a force to the contact platform tocause displacement of the contact platform with respect to the base;positioning the the contact platform such that a force that causesdisplacement of the contact platform is applied to the contact platformby the SPM probe while the SPM probe contacts the contact platform thatnulls the displacement of the contact platform caused by the forceapplied by the item system components to measure the force applied bythe item to the contact platform by (a) causing the displacementactuator to apply the force to the contact platform to cause thedisplacement of the contact platform and (b) measuring when thedisplacement caused by the force applied by the item has been nulled bythe displacement caused by the force applied by the displacementactuator.
 36. A microstructured force balance as recited in claim 35wherein the moveable platform includes an obdurate contact plate onwhich contact is made in order to displace the moveable platform.
 37. Amicrostructured force balance as recited in claim 36 wherein themoveable electrode comprises the obdurate contact plate.
 38. Amicrostructured force balance as recited in claim 36 wherein themoveable electrode comprises conductive diamond.
 39. A microstructuredforce balance as recited in claim 36 wherein the moveable electrodecomprises conductive silicon carbide.
 40. A microstructured forcebalance as recited in claim 36 wherein the moveable electrode comprisesconductive diamond like carbon.
 41. A microstructured force balance asrecited in claim 36 wherein the moveable electrode comprises conductivecarbon nitride.
 42. A microstructured force balance as recited in claim30 wherein: the moveable platform comprises a moveable electrode; andthe one or more displacement actuators comprise a displacement actuatorthat comprises the moveable electrode and a first stationary electrodefixedly coupled to the base such that the varying amounts ofdisplacement of the moveable platform are selectively caused by applyingselected voltages across the stationary electrode and the moveableelectrode; the one or more displacement sensors comprise a displacementsensor that comprises the moveable electrode and a second stationaryelectrode fixedly coupled to the base such that the varying amounts ofdisplacement of the moveable platform are sensed by detecting voltagechanges across the stationary electrode and the moveable electrode. 43.A microstructured force balance as recited in claim 29 wherein: themoveable platform comprises a moveable comb structure; the one or moredisplacement actuators comprise a displacment actuator that comprises amoveable comb structure electrode and a stationary electrode fixedlycoupled to the base such that the varying amounts of displacement of themoveable platform are selectively caused by applying selected voltagesacross the stationary electrode and the moveable electrode;.
 39. A forcemeasurement system to measure a force applied to or by an item, theforce measurement system comprising: a microstructured force balancethat comprises: a base; a contact platform; a suspension systemconnected to the base and the contact platform to displaceably suspendthe contact platform over the base such that a force that causesdisplacement of the contact platform is applied to the contact platformby an item while the item contacts the contact platform; and adisplacement actuator to apply a force to the contact platform to causedisplacement of the contact platform with respect to the base that nullsthe displacement of the contact platform caused by the force applied bythe item; system components to measure the force applied by the item tothe contact platform by (a) causing the displacement actuator to applythe force to the contact platform to cause the displacement of thecontact platform and (b) measuring when the displacement caused by theforce applied by the item has been nulled by the displacement caused bythe force applied by the displacement actuator.
 39. A force measurementsystem to measure a force applied to or by an item, the forcemeasurement system comprising: a microstructured force balance thatcomprises: a base; a contact platform; a suspension system connected tothe base and the contact platform to displaceably suspend the contactplatform over the base such that a force that causes displacement of thecontact platform is applied to the contact platform by an item while theitem contacts the contact platform; and a displacement actuator to applya force to the contact platform to cause displacement of the contactplatform with respect to the base that nulls the displacement of thecontact platform caused by the force applied by the item; systemcomponents to measure the force applied by the item to the contactplatform by (a) causing the displacement actuator to apply the force tothe contact platform to cause the displacement of the contact platformand (b) measuring when the displacement caused by the force applied bythe item has been nulled by the displacement caused by the force appliedby the displacement actuator.
 31. A nanostructured force balance asrecited in claim 29 wherein the moveable platform includes an obduratecontact plate for making contact in order to displace the moveableplatform.
 32. A nanostructured force balance as recited in claim 31wherein the moveable plate electrode is the obdurate contact plate. 33.A nanostructured force balance as recited in claim 32 wherein themoveable plate electrode comprises conductive diamond.
 34. Ananostructured force balance as recited in claim 32 wherein the moveableplate electrode comprises conductive silicon carbide.
 35. Ananostructured force balance as recited in claim 32 wherein the moveableplate electrode comprises conductive diamond like carbon.
 36. Ananostructured force balance as recited in claim 32 wherein the moveableplate electrode comprises conductive carbon nitride.
 29. An SPM systemthat comprises: an SPM probe comprising: a base with an aperturetherein; an SPM tool connected to the base and located within theaperture; components to make an SPM measurement of or SPM modificationto the object with the SPM tool of the SPM probe; and a vacuum source influid communication with the aperture in the base of the SPM probe; thecomponents including a positioning system to position the probe withrespect to the object to maintain a gap between the object and the lowersurface of the probe so that the vacuum source causes a vacuum to beestablished In the gap while the SPM measurement of or SPM modificationto the object is made with the SPM tool of the SPM probe.
 1. A probe fordelivering a fluid material to an object, the probe comprising: a tipwith a capillary; a microstructured pump having an inlet to receive thefluid material and an outlet in fluid communication with the capillary,the pump pumping the fluid material into the capillary so that the fluidmaterial is ejected by the capillary and delivered to the object inresponse to a control signal received by the pump.
 2. A probe as recitedin claim 1 further comprising: a base in which the pump is formed; and asupport platform connected to the base and on which the tip is located,the support structure having a duct that connects the capillary of thetip and the outlet of the pump.